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1 cghv59350 350 w, 5200 - 5900 mhz, 50-ohm input/output matched, gan hemt for c-band radar systems crees cghv59350 is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally with high effciency, high gain and wide bandwidth capabilities, which makes the cghv59350 ideal for 5.2 - 5.9 ghz c-band radar amplifer applications. the transistor is supplied in a ceramic/metal fange package, type 440217 and 440218. r e v 0 . 0 - m a y 2 0 1 5 - p r e l i m i n a r y features ? 5.2 - 5.9 ghz operation ? 450 w typical output power ? 10.5 db power gain ? 55% typical drain effciency ? 50 ohm internally matched ? <0.3 db pulsed amplitude droop typical performance over 5.2 - 5.9 ghz (t c = 25?c) of demonstration amplifer parameter 5.2 ghz 5.55 ghz 5.9 ghz units output power 440 445 490 w gain 10.5 10.5 11 db drain effciency 59 54 55 % note: measured in the cghv59350-tb under 100 s pulse width, 10% duty cycle, p in = 46 dbm pn: cghv59350 package type: 440217 and 440218 preliminary subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions pulse width pw 100 s duty cycle dc 10 % drain-source voltage v dss 125 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 64 ma 25?c maximum drain current 1 i dmax 24 a 25?c soldering temperature 2 t s 245 ?c screw torque 40 in-oz pulsed thermal resistance, junction to case r jc 0.31 ?c/w 100 sec, 10%, 85 ?c , p diss = 320 w case operating temperature t c -40, +85 ?c notes: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at http://www.cree.com/rf/tools-and-support/document-library electrical characteristics characteristics symbol min. typ. max. units conditions dc characteristics 1 (t c = 25 ? c) gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 64 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 50 v, i d = 1.0 a saturated drain current 2 i ds 48 57.8 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 150 C C v dc v gs = -8 v, i d = 64 ma notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 electrical characteristics continued... characteristics symbol min. typ. max. units conditions rf characteristics 3 (t c = 25 ? c, f 0 = 5.2 - 5.9 ghz unless otherwise noted) output power at 5.2 ghz p out1 C 440 C w v dd = 50 v, i dq = 1 a, p in = 46 dbm output power at 5.55 ghz p out2 C 445 C w v dd = 50 v, i dq = 1 a, p in = 46 dbm output power at 5.9 ghz p out3 C 490 C w v dd = 50 v, i dq = 1 a, p in = 46 dbm gain at 5.2 ghz g p1 C 10.5 C db v dd = 50 v, i dq = 1 a, p in = 46 dbm gain at 5.55 ghz g p2 C 10.5 C db v dd = 50 v, i dq = 1 a, p in = 46 dbm gain at 5.9 ghz g p3 C 11 C db v dd = 50 v, i dq = 1 a, p in = 46 dbm drain effciency at 5.2 ghz d e1 C 59 C % v dd = 50 v, i dq = 1 a, p in = 46 dbm drain effciency at 5.55 ghz d e2 C 54 C % v dd = 50 v, i dq = 1 a, p in = 46 dbm drain effciency at 5.9 ghz d e3 C 55 C % v dd = 50 v, i dq = 1 a, p in = 46 dbm small signal gain s21 C 15 C db v dd = 50 v, i dq = 1 a, p in = -10 dbm input return loss s11 C -7 C db v dd = 50 v, i dq = 1 a, p in = -10 dbm output return loss s22 C -11 C db v dd = 50 v, i dq = 1 a, p in = -10 dbm amplitude droop d C -0.3 C db v dd = 50 v, i dq = 1 a, p in = 46 dbm output stress match vswr C 5:1 C y no damage at all phase angles, v dd = 50 v, i dq = 1 a, p in = 46 dbm pulsed notes: 3 measured in cghv59350-tb. pulse width = 100 s, duty cycle = 10%. cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance figure 1. - small signal s-parameters cghv59350 in test fixture v dd = 50 v, i dq = 1 a, t case = 25 c figure 2. - cghv59350 pout, d eff , and gain vs. frequency at t case = 25 c v dd = 50v, i dq =1.0 a, p in =46 dbm, pulse width = 100s, duty cycle = 10% gp drain eff p out -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 g a i n , r e t u r n l o s s (d b ) frequency (ghz) small signal s-parameters cghv59350 in test fixture vdd = 50 v, idq = 1 a, tcase = 25 c s21 s11 s22 40 50 60 70 400 500 600 700 g a in (d b ) & dr a in e f f ic ie n c y (% ) o u t p u t p o w e r (w ) cghv59350 pout, deff, and gain vs. frequency at tcase = 25 c vdd = 50 v, idq = 1 a, pin = 46 dbm, pulse width = 100 s, duty cycle = 10 % output power 0 10 20 30 0 100 200 300 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 g a in (d b ) & dr a in e f f ic ie n c y (% ) o u t p u t p o w e r (w ) frequency (ghz) dain efficiency gain gain output power drain effciency cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance figure 3. - cghv59350 output power vs. input power v dd = 50v, i dq = 1.0 a, pulse width = 100s, duty cycle = 10%, t case = 25 c figure 4. - cghv59350 output power vs. input power v dd = 50v, i dq = 1.0 a, pulse width = 100s, duty cycle = 10%, t case = 25 c 50 52 54 56 58 o u t p u t p o w e r (d b m ) cghv59350 output power vs. input power vdd = 50 v, idq = 1 a, pulse width = 100 s, duty cycle = 10 %, tcase = 25 c pout 5.2 ghz pout 5.375 ghz pout 5.55 ghz 40 42 44 46 48 28 30 32 34 36 38 40 42 44 46 48 o u t p u t p o w e r (d b m ) input power (dbm) pout 5.725 ghz pout 5.9 ghz 10 12 14 16 40 50 60 70 o u t p u t p o w e r (d b m ) cghv59350 output power vs. input power vdd = 50 v, idq = 1 a, pulse width = 100 s, duty cycle = 10 %, tcase = 25 c 2 4 6 8 0 10 20 30 28 30 32 34 36 38 40 42 44 46 48 o u t p u t p o w e r (d b m ) input power (dbm) deff 5.2 ghz deff 5.375 ghz deff 5.55 ghz deff 5.725 ghz deff 5.9 ghz gain 5.2 ghz gain 5.375 ghz gain 5.55 ghz gain 5.725 ghz gain 5.9 ghz cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 typical performance figure 5. - output power vs. time v dd = 50v, p in =46 dbm, duty cycle = 10% 56.2 56.3 56.4 56.5 56.6 56.7 56.8 56.9 57 57.1 p o w e r (d b m ) output power vs. time vdd = 50 v, pin = 46 dbm, duty cycle = 10 % 25us 50us 100us 300us 500us 55.5 55.6 55.7 55.8 55.9 56 56.1 56.2 -50 0 50 100 150 200 250 300 350 400 450 500 550 p o w e r (d b m ) time (us) cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 cghv59350-tb application circuit bill of materials designator description qty r1 res, 5.1ohm, +/- 1%, 1/16w,0603 1 r2 res, 10ohm, +/- 1%, 1/16w,0603 1 c1,c2 cap, 5.6pf, +/- 0.25 pf,250v, 0603 2 c3,c8 cap, 20pf, +/- 0.25 pf,250v, 0603 2 c4,c9 cap, 470pf, 5%, 100v, 0603, x 2 c5 cap, 0.1mf, 1206, 250 v, x7r 1 l1 ind, ferrite, 220 ohm, 0603 1 c10 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c7 cap, 5.6pf, +/- 0.25 pf,250v, 0603 1 c11 cap, 3300 uf, +/-20%, 100v, electrolytic 1 c12 cap, 33 uf, 20%, g case 1 j1,j2 conn, sma, panel mount jack, fl 2 j3 header rt>plz .1cen lk 9pos 1 j4 connector ; smb, straight, jack,smd 1 w1 cable ,18 awg, 4.2 1 - pcb, test fixture, taconic rf35p 20mil over 0.250 copper back, 2.5 x 3 x 0.26", cghv59350-tb 1 - 2-56 soc hd screw 1/4 ss 4 - #2 split lockwasher ss 4 q1 cghv59350 1 cghv59350 power dissipation de-rating curve figure 4. - transient power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 200 225 250 p o w e r d i s s i p a t i o n (w ) maximum case temperature (c) cghv59350 power dissipation de-rating curve note 1 cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 cghv59350-amp1 application circuit schematic cghv59350-amp1 application circuit outline cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 product dimensions cghv59350f (package type 440217) product dimensions CGHV59350P (package type 440218) cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 part number system parameter value units upper frequency 1 5.9 ghz power output 350 w package flange/pill - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. flange/pill power output (w) upper frequency (ghz) cree gan high voltage cghv59350f/p cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product ordering information order number description unit of measure image cghv59350f gan hemt each CGHV59350P gan hemt each cghv59350-tb test board without gan hemt each cghv59350-amp1 test board with gan hemt installed each cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv59350 rev 0.0 - preliminary cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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