? ixys all rights reserved 1 - 2 20100706b vbo 36 ixys reserves the right to change limits, test conditions and dimensions. i dav = 30 a v rrm = 800-1800 v single phase rectifer bridge features ? package with ?" fast-on terminals ? isolation voltage 3000 v~ ? planar passivated chips ? blocking voltage up to 1800 v ? low forward voltage drop ? ul registered e 72873 applications ? supplies for dc power equipment ? input rectifers for pwm inverter ? battery dc power supplies ? field supply for dc motors advantages ? easy to mount with one screw ? space and weight savings ? improved temperature & power cycling symbol conditions maximum ratings i dav i davm t c = 85c, module t c = 62c, module 25 30 a a i fsm t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 550 600 a a t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 500 550 a a i 2 t t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 1520 1520 a 2 s a 2 s t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 1250 1250 a 2 s a 2 s t vj t vjm t stg -40...+150 150 -40...+150 c c c v isol 50/60 hz, rms t = 1 min i isol < 1 ma t = 1 s 2500 3000 v~ v~ m d mounting torque (m5) (10-32 unf) 2 10% 18 10% nm lb.in. weight typ. 22 g v rsm v rrm type v v 900 800 vbo 36-08no8 1300 1200 vbo 36-12no8 1700 1600 vbo 36-16no8 1900 1800 vbo 36-18no8 symbol conditions characteristic values i r v r = v rrm t vj = 25c t vj = t vjm 0.3 2.0 ma ma v f i f = 150 a t vj = 25c 1.7 v v t0 r t for power-loss calculations only 0.8 5.8 v mw r thjc r thjh per diode; 120 el. per module per diode; 120 el. per module 6.20 1.55 7.40 1.85 k/w k/w k/w k/w d s d a a creeping distance on surface creepage distance in air max. allowable acceleration 12.7 9.4 50 mm mm m/s 2 data according to iec 60747 and refer to a single diode unless otherwise stated. + ~ ~ - + - ~ ~ dimensions in mm (1 mm = 0.0394) 6.3 x 0.8 a b d e
? ixys all rights reserved 2 - 2 20100706b vbo 36 ixys reserves the right to change limits, test conditions and dimensions. v f [v] i f [a] 0 50 100 150 200 0.5 1 1.5 2 2.5 150c 25c i f(ov) / i fsm 10 0 10 1 10 2 10 3 t [ms] 0 v rrm ? v rrm 1 v rrm i fsm [a] t vj = 45c t vj = 150c 480 500 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.9 t [ms] a 2 s 10 2 10 3 10 4 1 2 4 6 10 150c 45c i favm [a] t amb [k] p tot [w] t c [c] 0 20 0 50 100 150 70 60 50 40 30 20 10 150 135 120 105 90 75 65 50 10 dc sin. 180 rec. 120 rec. 60 rec. 30 7.14 2.86 1.43 0.71 0.36 = r thca [k/w] t c [c] i dav [a] dc sin. 180 rec. 120 rec. 60 rec. 30 10 20 30 40 50 0 50 100 150 200 t [s] z th [k/w] 0.01 0.1 1 10 2 4 6 8 z thjk z thjc 0 100 fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current per diode i fsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 ms) per diode or thyristor fig. 4 power dissipation vs. direct output current and ambient temperature fig. 5 maximum forward current at case temperature fig. 6 transient thermal impedance per diode or thyristor, calculated
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