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this is information on a product in full production. december 2014 docid024661 rev 2 1/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 n-channel 800 v, 1.3 ? typ., 4.5 a mdmesh? k5 power mosfets in d2pak, dpak, i2pak and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? industry?s lowest rds(on) ? industry?s best figure of merit (fom) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these very high voltage n-channel power mosfets are designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. to-220 1 2 3 tab d 2 pak 1 3 dpak 1 2 3 i 2 pak ta b tab 1 3 tab d(2, tab) g(1) s(3) am01476v1 order codes v ds r ds(on) max i d p tot stb6n80k5 800 v 1.6 4.5 a 85 w std6n80k5 STI6N80K5 stp6n80k5 table 1. device summary order code marking package packaging stb6n80k5 6n80k5 d 2 pak tape and reel std6n80k5 dpak STI6N80K5 i 2 pak tube stp6n80k5 to-220 www.st.com
contents stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 2/24 docid024661 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 d2pak, stb6n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 dpak, std6n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 i2pak, STI6N80K5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.4 to-220, stp6n80k5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5 packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.1 d2pak and dpak tape and reel mechanical data . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
docid024661 rev 2 3/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 electrical ratings 24 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 4.5 a i d drain current (continuous) at t c = 100 c 2.8 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 18 a p tot total dissipation at t c = 25 c 85 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 1.5 a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 50 v) 85 mj dv/dt (2) 2. i sd 4.5 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 4.5 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d 2 pak dpak i 2 pak to-220 r thj-case thermal resistance junction-case 1.47 c/w r thj-amb thermal resistance junction-amb 62.50 62.50 r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu thermal resistance junction-pcb 30 50
electrical characteristics stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 4/24 docid024661 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, t j = 125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a 1.3 1.6 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v f = 1 mhz v gs = 0 - 270 - pf c oss output capacitance - 25 - pf c rss reverse transfer capacitance -0.7- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0 v ds = 0 -38-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -16-pf r g intrinsic gate resistance f = 1mhz, i d = 0 - 7.5 - q g total gate charge v dd = 640 v, i d = 4.5 a v gs = 10 v -13-nc q gs gate-source charge - 2.1 - nc q gd gate-drain charge - 9.6 - nc
docid024661 rev 2 5/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 electrical characteristics 24 . the built-in back-to-back zener diodes have been specifically designed to enhance the esd capability of the device. the zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. these integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 2.25 a, r g = 4.7 , v gs = 10 v -16-ns t r rise time - 7.5 - ns t d(off) turn-off delay time - 28.5 - ns t f fall time - 16 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4.5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 18 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 4.5 a, v dd = 60 v di/dt = 100 a/s, - 280 ns q rr reverse recovery charge - 2.2 c i rrm reverse recovery current - 15.5 a t rr reverse recovery time i sd = 4.5 a,v dd = 60 v di/dt =1 00 a/s, tj = 150 c - 450 ns q rr reverse recovery charge - 3.15 c i rrm reverse recovery current - 14 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v(br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 6/24 docid024661 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak, to-220 and i 2 pak figure 3. thermal impedance for d 2 pak, to-220 and i 2 pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics *,3*07 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*07 , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq pv ?v 7m ?& 7f ?& 6lqjohsxovh pv i d 0 0 4 v ds (v) 8 (a) 12 8 6v 7v v gs =10, 11, 12v 2 4 6 8v 9v 16 am18115v1 i d 6 4 2 0 6 v gs (v) 8 (a) 5 7 9 8 v ds =20v 10 11 am18116v1
docid024661 rev 2 7/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 electrical characteristics 24 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 4 q g (nc) (v) 8 6 8 10 v dd =640v i d =4.5a 12 300 200 100 0 400 500 v ds 2 10 v ds (v) 12 600 am18117v1 *,3*07 5 '6rq , ' $ : 9 *6 9 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am18119v1 e oss 2 1 0 0 v ds (v) (j) 400 200 3 600 4 am18120v1 1.1 0.8 0.6 0.4 t j (c) 0.5 0.7 0.9 1 1.2 -100 0 -50 100 50 150 v gs(th) (norm) am18082v2 i d =100 a 1.5 1 0.5 0 -100 0 t j (c) -50 2 100 50 150 i d =2 a 2.5 v gs =10 v r ds(on) (norm) am18081v2
electrical characteristics stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 8/24 docid024661 rev 2 figure 14. normalized v (br)dss vs temperature figure 15. source-drain diode forward characteristics v (br)dss -100 0 t j (c) (norm) -50 50 100 0.85 0.9 0.95 1 1.05 1.1 i d =1ma am18083v1 v sd 1 3 i sd (a) (v) 2 4 0.55 0.65 0.75 0.85 t j =-50c t j =150c t j =25c 0.95 am18121v1
docid024661 rev 2 9/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 test circuits 24 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 10/24 docid024661 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d 2 pak, stb6n80k5 figure 22. d2pak drawing b9
docid024661 rev 2 11/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 package mechanical data 24 table 9. d2pak mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 12/24 docid024661 rev 2 figure 23. d2pak footprint (a) a. all dimension are in millimeters
docid024661 rev 2 13/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 package mechanical data 24 4.2 dpak, std6n80k5 figure 24. dpak type a drawing b5
package mechanical data stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 14/24 docid024661 rev 2 table 10. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 l1 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid024661 rev 2 15/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 package mechanical data 24 figure 25. dpak type a footprint (b) b. all dimensions are in millimeters )3b5
package mechanical data stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 16/24 docid024661 rev 2 4.3 i 2 pak, STI6N80K5 figure 26. i 2 pak drawing 0004982_rev_h
docid024661 rev 2 17/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 package mechanical data 24 table 11. i2pak mechanical data dim. mm. min. typ. max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
package mechanical data stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 18/24 docid024661 rev 2 4.4 to-220, stp6n80k5 figure 27. to-220 type a drawing bw\sh$b5hyb7
docid024661 rev 2 19/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 package mechanical data 24 table 12. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
packaging information stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 20/24 docid024661 rev 2 5 packaging information 5.1 d 2 pak and dpak tape and reel mechanical data figure 28. tape for d2pak and dpak p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid024661 rev 2 21/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 packaging information 24 figure 29. reel for d2pak and dpak table 13. d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
packaging information stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 22/24 docid024661 rev 2 table 14. dpak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e1.65 1.85n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t0.25 0.35 w15.7 16.3
docid024661 rev 2 23/24 stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 revision history 24 6 revision history table 15. document revision history date revision changes 28-may-2013 1 first release. 05-dec-2014 2 updated title, features and description in cover page. added section 2.1: electrical characteristics (curves) . updated section 4: package mechanical data . minor text changes.
stb6n80k5, std6n80k5, STI6N80K5, stp6n80k5 24/24 docid024661 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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