pje8050 npn epitaxial silicon transistors 1-3 2002/01.rev.a o utput amplifier o f po rtable radio in clas s b pus h-pull o peratio n complement to pje8550 collector current ic=1.5a collector dissipation pc=2w(tc=25 c) device operating temperature package PJE8050CT to-92 pje8050cx -20 +85 sot-23 rating symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) *collector current (pulse) collector dissipation junction temperature storage t emperature v cbo v ceo v ebo i c i c p c t j tstg 120 60 6 0.5 1 0.75 150 -55~150 v v v a a w c c characteristic symbol test condition min typ max unit collector cutoff current emitter cutoff current *dc current gain **base emitter on voltage *collector emitter saturation voltage *base emitter saturation voltage output capacitance current gain bandwidth product turn on time storage time fall time i cbo i ebo h fe 1 h fe 2 v be (on) v ce (sat) v be (sat) c ob f t ton ts tf v cb =60v,i e =0 v eb =6v,i c =0 v ce =2v,i c =50ma v ce =2v,i c =0.5a v ce =2v,i c =20ma i c =400ma,i b =40ma ic=500ma,i b =50ma v cb =10v,i e =0,f=1mhz v ce =2v,i c =100ma v cc =10v,i c =100ma i b 1= -i b 2=10ma v be (off)= -2~-3v 135 81 600 100 640 0.15 0.9 19 160 0.07 0.95 0.07 100 100 400 700 0.3 1.2 na na mv v v pf mhz s s s classification b c d e hfe(1) 85-160 120-220 160-300 380-600 to-92 sot-23 absolute maximum ratings (ta = 25 c) electrical characteristics (t a=25 c) h fe (1) classification pin:1.base 2.emitter 3.colleto r ordering information pin:1.emitter 2. colletor 3. base
pje8050 npn epitaxial silicon transistors 2-3 2002/01.rev.a static characteristic base-emitter on voltage urrent gain-bandwidth product dc current gain base-emitter sat uration voltage collector-emitter sat uration voltage collector output capacit ance
pje8050 npn epitaxial silicon transistors 3-3 2002/01.rev.a
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