? semiconductor components industries, llc, 2006 april, 2006 ? rev. p0 1 publication order number: NTLJF1103P/d NTLJF1103P product preview power mosfet and schottky diode ?8 v, ?4.3 a, cool p?channel, with 2.0 a schottky barrier diode, 2x2 mm, wdfn package features ? wdfn 2x2 mm package with exposed drain pad for excellent thermal conduction ? footprint same as sc?88 package ? 1.5 v v gs rated r ds(on ) ? low v f , 2 a schottky diode ? low profile (< 0.8 mm) for easy fit in thin environment ? this is a pb?free device applications ? dc?dc buck converter ? low voltage hard disk dc power source mosfet maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss ?8 v gate?to?source v oltage v gs 6 v continuous drain current (note 1) stead y state t a = 25 c i d ?3.5 a t a = 85 c ?2.5 t 5 s t a = 25 c ?4.3 power dissipation (note 1) steady state t a = 25 c p d 1.5 w t 5 s 2.3 continuous drain current (note 2) stead y state t a = 25 c i d ?2.4 a t a = 85 c ?1.7 power dissipation (note 2) t a = 25 c p d 0.7 w pulsed drain current t p = 10 s i dm ?17 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?1.9 a single pulse drain?to?source avalanche energy (vdd = v, vg = v, ipk = a, rg = ) e as tbd mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 2 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size. this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 1 2 3 6 5 4 a n/c d k g s http://onsemi.com ?8 v 20 v 120 m @ ?2.5 v 90 m @ ?4.5 v 2.0 a r ds(on) max ?4.3 a 0.37 v i d max (note 1) v (br)dss mosfet schottky diode v r max i f max v f typ 150 m @ ?1.8 v g s p?channel mosfet d k a schottky diode jg = specific device code m = date code = pb?free package jg m 1 2 3 6 5 4 wdfn6 case 506an marking diagram (top view) 1 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information pin connections k d (note: microdot may be in either location) 170 m @ ?1.5 v
NTLJF1103P http://onsemi.com 2 schottky diode maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 2.0 a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 3) r ja 83 c/w junction?to?ambient ? t 5 s (note 3) r ja 54 junction?to?ambient ? steady state min pad (note 4) r ja 177 3. surface mounted on fr4 board using 2 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size. mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?8 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j i d = ?250 a, ref to 25 c tbd mv/ c zero gate voltage drain current i dss v ds = ?6 v, v gs = 0 v t j = 25 c ?1 a t j = 125 c tbd gate?to?source leakage current i gss v ds = 0 v, v gs = 5.0 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?0.4 tbd ?1.0 v gate threshold temperature coefficient v gs(th) /t j tbd mv/ c drain?to?source on?resistance r ds(on) v gs = ?4.5, i d = ?4.0 a 90 m v gs = ?2.5, i d = ?3.5 a 120 v gs = 1.8, i d = ?3.0 a 150 v gs = 1.5, i d = ?3.0 a 170 forward transconductance g fs v ds = ?6 v, i d = ?1.0 a tbd s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = ?8 v tbd pf output capacitance c oss tbd reverse transfer capacitance c rss tbd total gate charge q g(tot) v gs = ?4.5 v, v ds = ?5 v, i d = ?2.5 a 4 nc threshold gate charge q g(th) tbd gate?to?source charge q gs 1.5 gate?to?drain charge q gd 1.8 switching characteristics (note 6) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?8 v, i d = ?2.0 a, r g = 2 tbd ns rise time t r tbd turn?off delay time t d(off) tbd fall time t f tbd drain?source diode characteristics forward diode voltage v sd v gs = 0 v, is = ?1.9 a t j = 25 c tbd ?1.2 v reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ?1.9 a tbd ns 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTLJF1103P http://onsemi.com 3 schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0..26 tbd v i f = 1.0 a 0.37 tbd maximum instantaneous reverse current i r v r = 20 v tbd tbd a v r = 10 v tbd tbd schottky diode electrical characteristics (t j = 85 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a tbd tbd v i f = 1.0 a tbd tbd maximum instantaneous reverse current i r v r = 20 v tbd tbd ma v r = 10 v tbd tbd schottky diode electrical characteristics (t j = 125 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.13 tbd v i f = 1.0 a 0.27 tbd maximum instantaneous reverse current i r v r = 20 v tbd tbd ma v r = 10 v tbd tbd schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit capacitance c v r = 5.0 v, f = 1.0 mhz tbd pf ordering information device package shipping ? NTLJF1103Pt1g wdfn6 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTLJF1103P http://onsemi.com 4 package dimensions wdfn6 2x2 case 506an?01 issue b 2x c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 0.57 0.77 0.90 1.10 e 2.00 bsc 0.25 ref e2 e 0.65 bsc k 0.20 0.30 l 0.15 ref j pin one reference 0.08 c 0.10 c 6x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 6x 0.05 c 4x d2 2x j 6x 2.30 6x pitch bottom view 0.25 0.25 0.72 0.35 0.65 1.05 6x 0.43 dimensions: millimeters 1 soldering footprint * *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTLJF1103P/d cool is a trademark of semiconductor components industries, llc (scillc). literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
|
