cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 1/7 BTC3097J3 cystek product specification high voltage npn triple diffused planar transistor BTC3097J3 features ? high voltage, bv cbo =1600v min., bv ceo =800v min. ? pb-free lead plating package symbol outline BTC3097J3 to-252(dpak) b c e b base c collector e emitter ordering information device package shipping to-252 BTC3097J3-0-t3-g (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3:2500 pcs/tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 2/7 BTC3097J3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limit unit collector-base voltage v cbo 1600 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 6 v i c (dc) 1 a collector current i c (pulse) 3 *1 a base current i b 0.5 a power dissipation @t a =25 1 power dissipation @t c =25 p d 40 w operating junction and storage temperature range tj ; tstg -55~+150 c Q note : *1. single pulse pw 30 Q 0 s,duty 2% . thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 12.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 3.1 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 1600 - - v i c =100 a, i e =0 bv ceo 800 - - v i c =1ma, i b =0 bv ebo 6 - - v i e =100 a, i c =0 i cbo - - 10 a v cb =1600v, i e =0 i ceo - - 10 a v cb =800v, i b =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) - - 0.3 v i c =200ma, i b =40ma *v ce(sat) - - 0.4 v i c =500ma, i b =100ma *v be(sat) - - 1.2 v i c =500ma, i b =100ma *h fe 1 20 - - - v ce =5v, i c =10ma *h fe 2 22 - 45 - v ce =5v, i c =100ma *h fe 3 5 - - - v ce =5v, i c =500ma cob - 10 - pf v cb =10v, f=1mhz tr - - 0.8 tstg - - 3 tf - - 0.4 s v cc =400v, i c =0.5a, i b 1=0.1a i b 2=-0.2a *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 3/7 BTC3097J3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2m a 4ma 6ma 8m a 10ma 20ma emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 15ma 20ma 50m a current gain vs collector current 1 10 100 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=5ib
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 4/7 BTC3097J3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=5ib capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob onn voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon @ vce=5v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 5/7 BTC3097J3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 6/7 BTC3097J3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c663j3 issued date : 2015.09.14 revised date : page no. : 7/7 BTC3097J3 cystek product specification to-252 dimension marking: style: pin 1.base 2.collector 3.emitter 4 inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.087 0.094 2.200 2.400 e 0.086 0.094 2.186 2.386 a1 0.000 0.005 0.000 0.127 e1 0.172 0.188 4.372 4.772 b 0.039 0.048 0.990 1.210 h 0.163 ref 4.140 ref b 0.026 0.034 0.660 0.860 k 0.190 ref 4.830 ref b1 0.026 0.034 0.660 0.860 l 0.386 0.409 9.800 10.400 c 0.018 0.023 0.460 0.580 l1 0.114 ref 2.900 ref c1 0.018 0.023 0.460 0.580 l2 0.055 0.067 1.400 1.700 d 0.256 0.264 6.500 6.700 l3 0.024 0.039 0.600 1.000 d1 0.201 0.215 5.100 5.460 p 0.026 ref 0.650 ref e 0.236 0.244 6.000 6.200 v 0.211 ref 5.350 ref notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead : pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . 4.collector 3-lead to-252 plastic surface mount package cystek package code: j3 device n ame date c3097 code 2 3 1
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