IRF3205L thermal resistance v dss = 55v r ds(on) = 8.0m w i d = 110a ? s d g the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRF3205L) is available for low-profile applications. l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description to-262 IRF3205L parameter typ. max. units r q jc junction-to-case CCC 0.75 c/w r q ja junction-to-ambient (pcb mounted, steady-state) * CCC 40 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 110 ? i d @ t c = 100c continuous drain current, v gs @ 10v 80 a i dm pulsed drain current ? 390 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v i ar avalanche current ? 62 a e ar repetitive avalanche energy ? 20 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) 2014-8-28 1 www.kersemi.com
IRF3205L s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 62a, v gs = 0v ? t rr reverse recovery time CCC 69 104 ns t j = 25c, i f = 62a q rr reverse recovery charge CCC 143 215 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 110 390 a ? starting t j = 25c, l = 138h r g = 25 w , i as = 62a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ? i sd 62a , di/dt 207a/s, v dd v (br)dss , t j 175c ? pulse width 400s; duty cycle 2%. ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.057 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 8.0 m w v gs = 10v, i d = 62a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 44 CCC CCC s v ds = 25v, i d = 62a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 146 i d = 62a q gs gate-to-source charge CCC CCC 35 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 54 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 14 CCC v dd = 28v t r rise time CCC 101 CCC i d = 62a t d(off) turn-off delay time CCC 50 CCC r g = 4.5 w t f fall time CCC 65 CCC v gs = 10v, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 3247 CCC v gs = 0v c oss output capacitance CCC 781 CCC v ds = 25v c rss reverse transfer capacitance CCC 211 CCC pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ? CCC 1050 ? 264 ? mj i as = 62a, l = 138 m h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current ? this is a typical value at device destruction and represents operation outside rated limits. ? this is a calculated value limited to t j = 175c . 2014-8-28 2 www.kersemi.com
fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 107a 1 10 100 1000 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j IRF3205L 2014-8-28 3 www.kersemi.com
fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 62a v = 11v ds v = 27v ds v = 44v ds 1 10 100 1000 10000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j IRF3205L 2014-8-28 4 www.kersemi.com
r d fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d( off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v + - 25 50 75 100 125 150 175 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d( off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v v dd 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) IRF3205L 2014-8-28 5 www.kersemi.com
q g q gs q gd v g charge d.u.t . v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v cur rent regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0. 01 w t p d. u.t l v ds + - v dd dr iver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 25a 44a 62a IRF3205L 2014-8-28 6 www.kersemi.com
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t . i sd w aveform d.u.t . v ds w aveform inductor curent d = p. w . period + - + + + - - - * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * IRF3205L 2014-8-28 7 www.kersemi.com
d 2 p ak package outline d 2 p ak part marking information 10. 16 (.400) ref . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5. 08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 d im ens io n s after so ld er d ip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m mi nimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x p art number logo date code (yyw w ) yy = year ww = week a ssem bly lot code f530s 9b 1m 9246 a IRF3205L 2014-8-28 8 www.kersemi.com
t o-262 part marking information to-262 package outline IRF3205L 2014-8-28 9 www.kersemi.com
d 2 pak t ape & reel information 3 4 4 tr r feed direction 1. 85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) tr l feed direction 1 0.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. IRF3205L 2014-8-28 10 www.kersemi.com
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