february 2007 FDB8447L 40v n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDB8447L rev.c www.fairchildsemi.com 1 FDB8447L 40v n-channel powertrench ? mosfet 40v, 50 a, 8.5m ? features ? max r ds(on) = 8.5m ? at v gs = 10v, i d = 14a ? max r ds(on) = 11m ? at v gs = 4.5v, i d = 11a ? fast switching ? rohs compliant general description this n-channel mosfet has been produced using fairchild semiconductor?s proprietary powertrench ? technology to deliver low r ds(on) and optimized bv dss capability to offer superior performance benefit in the application. application ? inverter ? power supplies mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 50 a -continuous (silicon limited) t c = 25c (note 1) 66 -continuous t a = 25c (note 1a) 15 -pulsed 100 e as drain-source avalanche energy (note 3) 153 mj p d power dissipation t c = 25c 60 w power dissipation (note 1a) 3.1 t j , t stg operating and storage junction temperature range ?55 to +150 c r jc thermal resistance, junction to case (note 1) 2.1 c/w r ja thermal resistance, junction to ambient (note 1a) 40 device marking device package reel size tape width quantity FDB8447L FDB8447L to-263ab 330mm 24mm 800 units d g s d g s to-263ab fdb series
FDB8447L 40v n-channel powertrench ? mosfet FDB8447L rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 40 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 35 mv/ c i dss zero gate voltage drain current v ds = 32v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1 1.9 3 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -5 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 14a 7.4 8.5 m : v gs = 4.5v, i d = 11a 8.7 11.0 v gs = 10v, i d = 14a, t j =125 c 10.8 12.4 g fs forward transconductance v ds = 5v, i d = 14a 58 s (note 2) dynamic characteristics c iss input capacitance v ds = 20v, v gs = 0v, f = 1mhz 1970 2620 pf c oss output capacitance 250 335 pf c rss reverse transfer capacitance 150 225 pf r g gate resistance f = 1mhz 1.0 : switching characteristics t d(on) turn-on delay time v dd = 20v, i d = 14a v gs = 10v, r gen = 6 : 11 20 ns t r rise time 6 12 ns t d(off) turn-off delay time 28 45 ns t f fall time 4 10 ns q g(tot) total gate charge, v gs = 10v v dd =20v, i d = 14a v gs = 10v 37 52 nc q g(tot) total gate charge, v gs = 5v 20 28 nc q gs gate to source gate charge 6 nc q gd gate to drain ?miller? charge 7 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 14a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 14a, di/dt = 100a/ p s 28 42 ns q rr reverse recovery charge 24 36 nc notes: 1: r t ja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as th e solder mounting surface of the drain pins. r t jc is guaranteed by design while r t ja is determined by the user?s board design. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3: starting t j = 25c, l = 1mh, i as = 17.5a, v dd = 40v, v gs = 10v. a. 40c/w when mounted on a 1 in 2 pad of 2 oz copper b. 62.5c/w when mounted on a minimum pad.
FDB8447L 40v n-channel powertrench ? mosfet FDB8447L rev.c www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 20 40 60 80 100 v gs = 3v v gs = 4v v gs = 4.5v v gs = 3.5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 020406080100 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 3.5v v gs = 3v v gs = 10v v gs = 4v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 14a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 345678910 5 10 15 20 25 pulse duration = 80 p s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d = 7a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1234 0 20 40 60 80 100 t j = -55 o c t j = 25 o c t j = 125 o c pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v gs , gate to source voltage (v) v dd = 5v figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDB8447L 40v n-channel powertrench ? mosfet FDB8447L rev.c www.fairchildsemi.com 4 figure 7. 0 10203040 0 2 4 6 8 10 v dd = 30v v dd = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 20v i d = 14a gate charge characteristics figure 8. 0.1 1 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 3000 40 50 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 20 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 20 40 60 80 limited by package r t jc = 2.1 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 100 0.1 1 10 100 100ms 10ms 1ms 100us operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c i d , drain current (a) v ds , drain to source voltage (v) 300 figure 12. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 100 1000 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 50 t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t c ? 125 --------------------- s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDB8447L 40v n-channel powertrench ? mosfet FDB8447L rev.c www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.1 1 duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 0.05 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
6 FDB8447L 40v n-channel powertrench ? mosfet trademarks the following are registered and unregistere d trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make c hanges without further notice to any products herein to improve reliability, function or design. fairchild does not as sume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fair child semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical impl ant into the body or (b ) support or sustain life and (c) whose failure to perform when properly us ed in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury to the user. 2. a critical component is any comp onent of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life suppo rt device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world. ? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? gto? hisec? i-lo ? implieddisconnect ? intellimax? isoplanar? microcoupler? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? scalarpump ? smart start? spm? superfet? supersot?-3 supersot?-6 supersot?-8 tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes ? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design th is datasheet contains the design specifica tions for product develop- ment. specifications may change in any manner without notice. preliminary first production this datasheet contains pr eliminary data, and supple mentary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full pr oduction this datasheet contains final specifi cations. fairchild semiconductor reserves the right to make changes at any tim e without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontin- ued by fairchild semiconductor.the data sheet is printed for reference infor- mation only. rev. i23 tm ?2007 fairchild semiconductor corporation www.fairchildsemi.com tm
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