n-channel jfet high frequency amplifier u308 C u310 features high power gain low noise dynamic range greater the 100db easily matched to 75 w input absolute maximum ratings (t a = 25 o c unless otherwise specified) gate-drain or gate-source voltage . . . . . . . . . . . . . . . . -25v gate current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ma storage temperature . . . . . . . . . . . . . . . . . . . -65 o c to +200 o c operating temperature range . . . . . . . . . . . -55 o c to +150 o c lead temperature (soldering, 10sec) . . . . . . . . . . . . . +300 o c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mw derate above 25 o c . . . . . . . . . . . . . . . . . . . . . . . . 4mw/ o c note: stresses above those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and func tional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. ordering information part package temperature range u308-10 hermetic to-52 -55 o c to +150 o c xu308-10 sorted chips in carriers -55 o c to +150 o c llc pin configuration d s (to-52) g, c 5021 electrical characteristics (t a = 25 o c unless otherwise specified) symbol parameter u308 u309 u310 units test conditions min typ max min typ max min typ max i gss gate reverse current -150 -150 -150 pa v gs = -15v -150 -150 -150 na v gs = 0 t a = 125 o c bv gss gate-source breakdown voltage -25 -25 -25 v i g = -1 m a, v ds = 0 v gs(off) gate-source cutoff voltage -1.0 -6.0 -1.0 -4.0 -2.5 -6.0 v ds = 10v, i d = 1na i dss saturation drain current (note 1) 12 60 12 30 24 60 ma v ds = 10v, v gs = 0 v gs(f) gate-source forward voltage 1.0 1.0 1.0 v i g = 10ma, v ds = 0 g fg common-gate forward transconductance (note 1) 10 17 10 17 10 17 ms v ds = 10v, i d = 10ma f = 1khz g ogs common gate output conductance 250 250 250 m s c gd drain-gate capacitance 2.5 2.5 2.5 pf v gs = -10v, v ds = 10v f = 1mhz (note 2) c gs gate-source capacitance 5.0 5.0 5.0 e n equivalent short circuit input noise voltage 10 10 10 nv ? ``` hz v ds = 10v, i d = 10ma f = 100hz (note 2)
u308 ? u310 llc electrical characteristics (continued) (t a = 25 o c unless otherwise specified) symbol parameter u308 u309 u310 units test conditions min typ max min typ max min typ max g fg common-gate forward transconductance 15 15 15 m s v ds = 10v, i d = 10ma (note 2) f = 100mhz 14 14 14 f = 450mhz g ogs common-gate output conductance 0.18 0.18 0.18 f = 100mhz 0.32 0.32 0.32 f = 450mhz g pg common-gate power gain 14 16 14 16 14 16 db f = 100mhz 10 11 10 11 10 11 f = 450mhz nf noise figure 1.5 2.0 1.5 2.0 1.5 2.0 f = 100mhz 2.7 3.5 2.7 3.5 2.7 3.5 f = 450mhz notes: 1. pulse test duration = 2ms. 2. for design reference only, not 100% tested.
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