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this is information on a product in full production. october 2015 docid027022 rev 2 1/16 STL92N10F7AG automotive-grade n-channel 100 v, 0.008 ? typ.,16 a stripfet? f7 power mosfet in a powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness ? wettable flank package applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. powerflat ? 5x6 1 2 3 4 am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max i d p tot STL92N10F7AG 100 v 0.0095 ? 16 a 5 w table 1. device summary order code marking package packaging STL92N10F7AG 92n10f7 powerflat tm 5x6 tape and reel www.st.com
contents STL92N10F7AG 2/16 docid027022 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 powerflat? 5x6 wf type r package information . . . . . . . . . . . . . . . . . 10 4.2 powerflat? 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 docid027022 rev 2 3/16 STL92N10F7AG electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d (1) 1. this value is rated according to r thj-c drain current (continuous) at t c = 25 c 70 a i d (1) drain current (continuous) at t c = 100 c 50 a i d (2) 2. this value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 16 a i d (2) drain current (continuous) at t pcb = 100 c 11 a i dm (2)(3) 3. pulse width limited by safe operating area. drain current (pulsed) 64 a p tot (1) total dissipation at t c = 25 c 100 w p tot (2) total dissipation at t pcb = 25 c 5 w t stg storage temperature -55 to 175 c c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch 2 , 2 oz cu. thermal resistance junction-pcb max 31 c/w r thj-case thermal resistance junction-case max 1.5 c/w electrical characteristics STL92N10F7AG 4/16 docid027022 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a , v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 3.5 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 8 a 0.008 0.0095 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 3100 - pf c oss output capacitance - 700 - pf c rss reverse transfer capacitance -45-pf q g total gate charge v dd = 50 v, i d = 16 a, v gs = 10 v (see figure 14 ) -45-nc q gs gate-source charge - 18 - nc q gd gate-drain charge - 13 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 8 a, r g = 4.7 ? , v gs = 10 v (see figure 15 and figure 18 ) -19-ns t r rise time - 32 - ns t d(off) turn-off delay time - 36 - ns t f fall time - 13 - ns docid027022 rev 2 5/16 STL92N10F7AG electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 16 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 64 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 16 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 16 a, di/dt = 100 a/s v dd = 80 v, t j =150 c (see figure 18 ) -70 ns q rr reverse recovery charge - 125 nc i rrm reverse recovery current - 3.6 a electrical characteristics STL92N10F7AG 6/16 docid027022 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100 s 0.1 tj=175c tpcb=25c single pulse am18087v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -3 10 -2 10 -2 10 -1 10 -4 10 -3 10 -1 10 0 10 1 pcb am18088v1 figure 4. output characteristics figure 5. transfer characteristics i d 250 150 50 0 0 2 v ds (v) 4 (a) 6 5v 6v v gs =10v 100 200 300 7v 8v 9v 8 am18089v1 i d 300 200 100 0 4 v gs (v) 8 (a) 2 10 50 150 250 v ds =9v 6 am18090v1 figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance v gs 6 4 2 0 0 20 q g (nc) (v) 8 30 40 10 v dd =50v i d =16a 12 10 50 am18091v1 r ds(on) 4.00 2.00 0.00 0 10 i d (a) (m ) 5 15 6.00 v gs =10v 20 8.00 10.00 am18092v1 docid027022 rev 2 7/16 STL92N10F7AG electrical characteristics 16 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature c 1500 1000 500 0 0 20 v ds (v) (pf) 80 ciss coss crss 40 60 2500 2000 3000 3500 am18093v1 v gs(th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) 0.8 45 95 i d =250 a 145 1 1.2 am18094v1 figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature r ds(on) t j (c) (norm) -55 -5 45 95 145 1.5 1 0.5 0 2 i d =16a v gs =10v am18095v1 v (br)dss t j (c) (norm) 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 i d =1ma 1.04 -55 -5 45 95 145 am18096v1 figure 12. source-drain diode forward characteristics v sd 5 15 i sd (a) (v) 10 20 25 0.5 0.6 0.7 0.8 t j =-55c t j =175c t j =25c 0.9 30 am18097v1 test circuits STL92N10F7AG 8/16 docid027022 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs docid027022 rev 2 9/16 STL92N10F7AG package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. package mechanical data STL92N10F7AG 10/16 docid027022 rev 2 4.1 powerflat? 5x6 wf type r package information figure 19. powerflat? 5x6 wf type r package outline $ < |