dmg 9n65ct i document number: ds 36027 rev. 4 - 2 1 of 5 www.diodes.com february 2015 ? diodes incorporated dmg 9n65cti n - channel enhancement mode mosfet product summary v (br)dss r ds(on) package i d t c = + 25c 65 0v 1.3 gs = 10v i to - 220 ab 9.0a description t his new generation complementary dual mosfet features low on - resistance and fast switching, ma king it ideal for high - efficiency power management applications. applications ? ? ? ? features ? ? ? ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? ? , green molding compound ? ? ? C ordering information (note 4 ) part number case packaging dmg 9 n 65 ct i i to - 220 ab 50 pieces/tube note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http: //www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm b romine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information e quivalent circuit top view pin out configuration top view bottom view 9n65cti = product type marking code yyww = date code marking yy = last t wo d igits of y ear (ex: 13 = 2013) ww = week (01 - 53) i to - 220ab i to - 220ab d s g yyww ab 9n65cti
dmg 9n65ct i document number: ds 36027 rev. 4 - 2 2 of 5 www.diodes.com february 2015 ? diodes incorporated dmg 9n65cti maximum ratings (@ t a = +25c, un less otherwise specified.) characteristic symbol value unit drain - source voltage v dss 65 0 v gate - source voltage v gss 30 v continuous drain current (note s 5 & 6 ) v gs = 10v steady state t c = + 25c t c = + 70 c i d 9 .0 7.0 a pulsed drain curr ent (note 7 ) 10 s pulse, pulse duty cycle<=1% i dm 30 a avalanche current (note 8 ) v dd = 100v, v gs = 10v, l = 60mh i ar 2.7 a repetitive avalanche energy (note 8 ) v dd = 100v, v gs = 10v, l = 60mh e a r 260 mj thermal characteristics characteristic symbol max unit power dissipation (note 5 ) t c = + 25c t c = + 70 c p d 13 8 w thermal resistance, junction to case (note 5 ) t c = + 25c r j c 8.84 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical c haracteristics ( @ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss 65 0 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = + 25c i dss - - 1.0 a v ds = 65 0 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 30 v, v ds = 0v on characteristics (note 9 ) gate threshold voltage v gs(th) 3 - 5 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 0.7 1.3 v gs = 10 v, i d = 4. 5 a forward transfer admittance |y fs | - 8 .5 - s v ds = 40 v, i d = 4. 5 a diode forward voltage v sd - 0.7 1.0 v v gs = 0v, i s = 1 a dynamic characteristics (note 10 ) input capacitance c iss - 2 310 - pf v ds = 2 5 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 1 2 2 - reverse transfer capacitance c rss - 2.2 - gate resistance r g - 2. 2 - v ds = 0 v, v gs = 0v , f = 1mhz total gate charge v gs = 10v q g - 39 - nc v gs = 10 v, v ds = 52 0 v, i d = 8 a gate - source charge q gs - 8.5 - gate - drain charge q gd - 11.9 - turn - on delay time t d(on) - 39 - ns v gs = 10 v, v ds = 3 25 v, r g = 2 5 , i d = 8 a turn - on rise time t r - 29 - ns turn - off delay time t d(off) - 122 - ns turn - off fall time t f - 28 - ns body diode reverse recovery time t r r - 570 - ns di/dt = 100a/ s , v ds = 100 v, i f = 8 a body diode reverse recovery charge q rr - 4.17 - c notes: 5 . device mounted on an infinite heatsink . 6 . drain current limited by maximum junction temperature . 7. repetitive rating, pulse width limited by junction temperature. 8 . i ar and e ar rating are based on low frequency and duty cycles to keep t j = + 25 c. 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject t o production testing.
dmg 9n65ct i document number: ds 36027 rev. 4 - 2 3 of 5 www.diodes.com february 2015 ? diodes incorporated dmg 9n65cti 0 4 8 12 16 20 v , drain-source voltage (v) fig. 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d 0.001 0.01 0.1 1 10 0 1 2 3 4 5 6 v , gate-source voltage gs fig. 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current d fig. 3 typical on-resistance vs. drain current and gate voltage v = 20v gs v = 10v gs 0 1 2 3 4 0 2 4 6 8 10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current d fig. 4 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j ? v = v i = 10a gs d 15 v = v i = 5a gs d 10 0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = v i = 5a gs d 10 v = v i = 10a gs d 15
dmg 9n65ct i document number: ds 36027 rev. 4 - 2 4 of 5 www.diodes.com february 2015 ? diodes incorporated dmg 9n65cti package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ito - 220ab dim min typ max a 4.50 4.70 4.90 a1 3.04 3.24 3.44 a2 2.56 2.76 2.96 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 c 0.50 0.60 0.70 d 15.67 15.87 16.07 d1 8.99 9.19 9.39 e 2.54 e 9.91 10.11 10.31 l 9.45 9.75 10.05 l1 15.80 16.00 16.20 p 2.98 3.18 3.38 q 3.10 3.30 3.50 all dimensions in mm 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 1ma d i = 250a d 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( v ) s t = 25c a section b-b 3 ? p e 5 5 5 5 q d 1 d ? p b 1 3 x l e l 1 b a a1 a2 c 5 0 5 5 5 5 3 5 5 e b b 3 x
dmg 9n65ct i document number: ds 36027 rev. 4 - 2 5 of 5 www.diodes.com february 2015 ? diodes incorporated dmg 9n65cti important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark ri ghts, nor the rights of others. any customer or user of this document or products described herein in such applications shal l assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on d iodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporat ed products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim o f personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be c overed by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format rel eased by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorp orated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use p rovided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree th at they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - crit ical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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