dmg9n65ct document number: ds35619 rev. 7 - 2 1 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct n-channel enhancement mode mosfet product summary v (br)dss r ds(on) package i d t c = +25c 650v 1.3 @ v gs = 10v to-220ab 9.0 a description this new generation complementary dual mosfet featu res low on- resistance and fast switching, making it ideal for high-efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions features ? low input capacitance ? high bvdss rating for power application ? low input/output leakage ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y mechanical data ? case: to-220ab ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? terminals: matte tin finish annealed over copper l eadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram below ? weight: to-220ab ? 1.85 grams (approximate) ordering information (note 4) part number case packaging dmg9n65ct to-220ab 50 pieces/tube notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. all applicable rohs exemptio ns applied. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at htt p://www.diodes.com/products/packages.html. marking information to-220ab equivalent circuit top view pin out configuration d s g top view bottom view yyww ab 9n65ct 9n65ct = product type marking code ab = foundry and assembly code yyww = date code marking yy = last two digits of year (ex: 11 = 2011) ww = week (01 - 53) to-220ab green
dmg9n65ct document number: ds35619 rev. 7 - 2 2 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current (note 5) v gs = 10v steady state t c = +25c t c = +70c i d 9.0 7.0 a pulsed drain current (note 6) 10us pulse, pulse du ty cycle<=1% i dm 30 a avalanche current (note 7) v dd = 100v, v gs = 10v, l = 60mh i a r 2.7 a repetitive avalanche energy (note 7) v dd = 100v, v gs = 10v, l = 60mh e a r 260 mj thermal characteristics characteristic symbol max unit power dissipation (note 5) t c = +25c t c = +70c p d 165 100 w thermal resistance, junction to case (note 5) r j c 0.7 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain-source breakdown voltage bv dss 650 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current t j = +25c i dss ? ? 1.0 a v ds = 650v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 30v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 3 ? 5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 0.7 1.3 v gs = 10v, i d = 4.5a forward transfer admittance |y fs | ? 8.5 ? s v ds = 40v, i d = 4.5a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9 ) input capacitance c iss ? 2,310 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 122 ? reverse transfer capacitance c rss ? 2.2 ? gate resistance r g ? 2.2 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge v gs = 10v q g ? 39 ? nc v gs = 10v, v ds = 520v, i d = 8a gate-source charge q gs ? 8.5 ? gate-drain charge q gd ? 11.9 ? turn-on delay time t d(on) ? 39 ? ns v gs = 10v, v ds = 325v, r g = 25 , i d = 8a turn-on rise time t r ? 29 ? ns turn-off delay time t d(off) ? 122 ? ns turn-off fall time t f ? 28 ? ns body diode reverse recovery time t r r ? 570 ? ns di/dt = 100a/s, v ds = 100v, i f = 8a body diode reverse recovery charge q rr ? 4.17 ? c notes: 5. device mounted on an infinite heatsink. 6. repetitive rating, pulse width limited by juncti on temperature. 7. i ar and e ar rating are based on low frequency and duty cycles to keep t j = +25c. 8. short duration pulse test used to minimize self- heating effect. 9. guaranteed by design. not subject to production testing.
dmg9n65ct document number: ds35619 rev. 7 - 2 3 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct 0 4 8 12 16 20 v , drain-source voltage (v) fig. 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d 0.001 0.01 0.1 1 10 0 1 2 3 4 5 6 v , gate-source voltage gs fig. 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i , drain-source current d fig. 3 typical on-resistance vs. drain current and gate voltage v = 20v gs v = 10v gs 0 1 2 3 4 0 2 4 6 8 10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i , drain current d fig. 4 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs
dmg9n65ct document number: ds35619 rev. 7 - 2 4 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct 0 0.5 1.0 1.5 2.0 2.5 3.0 r , d r a i n - s o u r c e on-resistance (normalized) ds(on) 50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j v = v i = 10a gs d 15 v = v i = 5a gs d 10 0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) v = v i = 5a gs d 10 v = v i = 10a gs d 15 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient tempera ture j v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) i = 1ma d i = 250a d 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( v ) s t = 25c a
dmg9n65ct document number: ds35619 rev. 7 - 2 5 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct 1 10 100 1,000 v , drain-source voltage (v) fig. 9 soa, safe operation area ds 0.001 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d 0.01 r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 10 transient thermal resistance 10,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r = r * r ja(t) (t) ja ja r = 57 c/w duty cycle, d = t1/t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse
dmg9n65ct document number: ds35619 rev. 7 - 2 6 of 6 www.diodes.com february 2015 ? diodes incorporated dmg 9n65ct package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com to220ab dim min typ max a 3.56 - 4.82 a1 0.51 - 1.39 a2 2.04 - 2.92 b 0.39 0.81 1.01 b2 1.15 1.24 1.77 c 0.356 - 0.61 d 14.22 - 16.51 d1 8.39 - 9.01 e 2.54 e1 5.08 e 9.66 - 10.66 h1 5.85 - 6.85 l 12.70 - 14.73 l1 - - 6.35 p 3.54 - 4.08 q 2.54 - 3.42 all dimensio ns in mm a a1 c d e l b e 1 b2 p h 1 q l1 a2 e seating p l a n e d1 1 6 . 0 0 0 . 2 0 * *guaranteed by to-220ab leadframe design
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