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1. product profile 1.1 general description npn/pnp resistor-equipped transistors (ret ) in surface-mounted device (smd) plastic packages. 1.2 features and benefits 1.3 applications ? low current per ipheral driver ? control of ic inputs ? replaces general-purpose trans istors in digital applications 1.4 quick reference data pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? rev. 6 ? 4 january 2012 product data sheet table 1. product overview type number package pnp/pnp complement npn/npn complement package configuration nxp jeita pemd10 sot666 - pemb10 pemh10 ultra small and flat lead pumd10 sot363 sc-88 pumb10 pumh10 very small ? 100 ma output current capability ? reduces component count ? built-in bias resistors ? reduces pick and place costs ? simplifies circuit design ? aec-q101 qualified table 2. quick reference data symbol parameter conditions min typ max unit per transistor; fo r the pnp transistor (tr2 ) with negative polarity v ceo collector-emitter voltage open base - - 50 v i o output current - - 100 ma r1 bias resistor 1 (input) 1.54 2.20 2.86 k ? r2/r1 bias resistor ratio 17 21 26
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 2 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 2. pinning information 3. ordering information 4. marking [1] * = placeholder for manufacturing site code. table 3. pinning pin description simplified outline graphic symbol 1 gnd (emitter) tr1 2 input (base) tr1 3 output (collector) tr2 4 gnd (emitter) tr2 5 input (base) tr2 6 output (collector) tr1 001aab555 6 4 5 1 3 2 65 4 1 23 r2 tr1 tr2 r1 r2 r1 006aaa143 table 4. ordering information type number package name description version pemd10 - plastic surface-mounted package; 6 leads sot666 pumd10 sc-88 plastic surface-mounted package; 6 leads sot363 table 5. marking codes type number marking code [1] pemd10 d1 pumd10 d*0
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 3 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] reflow soldering is the only recommended soldering method. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor; fo r the pnp transistor (tr2 ) with negative polarity v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 5 v v i input voltage tr1 positive - +12 v negative - ? 5v input voltage tr2 positive - +5 v negative - ? 12 v i o output current - 100 ma i cm peak collector current - 100 ma p tot total power dissipation t amb ? 25 ?c [1] pemd10 (sot666) [2] -200mw pumd10 (sot363) - 200 mw per device p tot total power dissipation t amb ? 25 ?c [1] pemd10 (sot666) [2] -300mw pumd10 (sot363) - 300 mw t j junction temperature - 150 ?c t amb ambient temperature ? 65 +150 ?c t stg storage temperature ? 65 +150 ?c
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 4 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] reflow soldering is the only recommended soldering method. sot363 and sot666; fr4 pcb, standard footprint fig 1. per device: power derating curve t amb (c) -75 175 125 25 75 -25 006aac749 200 100 300 400 p tot (mw) 0 table 7. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air [1] pemd10 (sot666) [2] --625k/w pumd10 (sot363) - - 625 k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] pemd10 (sot666) [2] --417k/w pumd10 (sot363) - - 417 k/w
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 5 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration for pemd10 (sot666); typical values fr4 pcb, standard footprint fig 3. transient thermal impedance from junction to ambient as a function of pulse duration for pumd10 (sot363); typical values 006aac751 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aac750 10 -5 10 10 -2 10 -4 10 2 10 -1 t p (s) 10 -3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 6 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 7. characteristics [1] characteristics of built-in transistor. table 8. characteristics t amb =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit per transistor; fo r the pnp transistor (tr2 ) with negative polarity i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b = 0 a - - 100 na v ce =30v; i b =0a; t j = 150 ?c --5 ? a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 180 ? a h fe dc current gain v ce =5v; i c = 10 ma 100 - - v cesat collector-emitter saturation voltage i c =5ma; i b = 0.25 ma - - 100 mv v i(off) off-state input voltage v ce =5v; i c =100 ? a-0.60.5v v i(on) on-state input voltage v ce = 0.3 v; i c =5ma 1.1 0.75 - v r1 bias resistor 1 (input) 1.54 2.20 2.86 k ? r2/r1 bias resistor ratio 17 21 26 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz tr1 (npn) - - 2.5 pf tr2 (pnp) - - 3 pf f t transition frequency v cb =5v; i c =10ma; f = 100 mhz [1] tr1 (npn) - 230 - mhz tr2 (pnp) - 180 - mhz
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 7 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? v ce =5v (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?40 ? c i c /i b =20 (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?40 ? c fig 4. tr1 (npn): dc current gain as a function of collector current; typical values fig 5. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values v ce =0.3v (1) t amb = ?40 ? c (2) t amb =25 ? c (3) t amb = 100 ? c v ce =5v (1) t amb = ?40 ? c (2) t amb =25 ? c (3) t amb = 100 ? c fig 6. tr1 (npn): on-state input voltage as a function of collector current; typical values fig 7. tr1 (npn): off-state input voltage as a function of collector current; typical values i c (ma) 10 -1 10 2 10 1 006aac805 10 2 10 10 3 h fe 1 (1) (2) (3) 006aac810 i c (ma) 10 -1 10 2 10 1 10 -1 1 v cesat (v) 10 -2 (1) (2) (3) 006aac811 i c (ma) 10 -1 10 2 10 1 1 10 v i(on) (v) 10 -1 (1) (2) (3) 006aac812 i c (ma) 10 -1 10 1 1 v i(off) (v) 10 -1 (1) (2) (3)
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 8 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? f=1mhz; t amb =25 ? cv ce =5v; t amb =25 ? c fig 8. tr1 (npn): collector capacitance as a function of collector-base voltage; typical values fig 9. tr1 (npn): transition frequency as a function of collector current; typical values of built-in transistor v ce = ?5v (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?40 ? c i c /i b =20 (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?40 ? c fig 10. tr2 (pnp): dc current gain as a function of collector current; typical values fig 11. tr2 (pnp): collec tor-emitter saturation voltage as a function of collector current; typical values v cb (v) 050 40 20 30 10 006aac813 1 2 3 c c (pf) 0 006aac757 i c (ma) 10 -1 10 2 10 1 10 2 10 3 f t (mhz) 10 i c (ma) -10 -1 -10 2 -10 -1 006aac814 10 2 10 10 3 h fe 1 (1) (2) (3) 006aac815 i c (ma) -10 -1 -10 2 -10 -1 -10 -1 -1 v cesat (v) -10 -2 (1) (2) (3)
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 9 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? v ce = ? 0.3 v (1) t amb = ?40 ? c (2) t amb =25 ? c (3) t amb = 100 ? c v ce = ?5v (1) t amb = ?40 ? c (2) t amb =25 ? c (3) t amb = 100 ? c fig 12. tr2 (pnp): on-state input voltage as a function of collector current; typical values fig 13. tr2 (pnp): off-state input voltage as a function of collector current; typical values f = 1 mhz; t amb =25 ? cv ce = ? 5v; t amb =25 ? c fig 14. tr2 (pnp): collector capacitance as a function of collector-base voltage; typical values fig 15. tr2 (pnp): transition frequency as a function of collector current; typical values of built-in transistor 006aac816 i c (ma) -10 -1 -10 2 -10 -1 -1 -10 v i(on) (v) -10 -1 (1) (2) (3) 006aac817 i c (ma) -10 -1 -10 -1 -1 v i(off) (v) -10 -1 (1) (2) (3) v cb (v) 0 -50 -40 -20 -30 -10 006aac818 3 6 9 c c (pf) 0 006aac763 i c (ma) -10 -1 -10 2 -10 -1 10 2 10 3 f t (mhz) 10
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 10 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 8. test information 8.1 quality information this product has been qualified in accordance with the automotive electronics council (aec) standard q101 - stress test qualificat ion for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline fig 16. package outline pemd10 (sot666) fig 17. package outline pumd10 (sot363/sc-88) dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 1 0.18 0.08 0.27 0.17 0.5 pin 1 index 123 456 0.6 0.5 0.3 0.1 06-03-16 dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 65
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 11 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping 11. soldering table 9. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 4000 8000 10000 pemd10 sot666 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - pumd10 sot363 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 - - -165 reflow soldering is the only recommended soldering method. fig 18. reflow soldering footprint pemd10 (sot666) solder lands placement area occupied area solder paste sot666_fr 2.75 2.45 2.1 1.6 0.4 (6) 0.55 (2) 0.25 (2) 0.6 (2) 0.65 (2) 0.3 (2) 0.325 (4) 0.45 (4) 0.5 (4) 0.375 (4) 1.72 1.7 1.075 0.538 dimensions in mm
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 12 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? fig 19. reflow soldering footprint pumd10 (sot363/sc-88) fig 20. wave soldering footprint pumd10 (sot363/sc-88) solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2) 0.6 (2) 0.5 (4) 0.5 (4) 0.6 (4) 0.6 (4) 1.5 1.8 dimensions in mm sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 dimensions in mm
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 13 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 12. revision history table 10. revision history document id release date data sheet status change notice supersedes pemd10_pumd10 v.6 20120104 product data sheet - pemd10_pumd10 v.5 modifications: ? the format of this document has been re designed to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? section 1 ? product profile ? : updated ? section 4 ? marking ? : updated ? table 6 ? limiting values ? : p tot updated according to the latest measurements ? table 7 ? thermal characteristics ? : updated according to the latest measurements ? table 8 ? characteristics ? : i ceo updated according to the latest measurements, f t added ? figure 1 to 3 , 8 , 9 , 14 and 15 : added ? figure 4 to 7 and figure 10 to 13 : updated ? section 8 ? test information ? : added ? section 11 ? soldering ? : added ? section 13 ? legal information ? : updated pemd10_pumd10 v.5 20040415 product data sheet - pemd10_pumd10 v.4 pemd10_pumd10 v.4 20031104 product specification - pemd10 v.2 pumd10 v.3
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 14 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
pemd10_pumd10 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 6 ? 4 january 2012 15 of 16 nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors pemd10; pumd10 npn/pnp resistor-equipped transistors; r1 = 2.2 k ? , r2 = 47 k ? ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 4 january 2012 document identifier: pemd10_pumd10 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 10 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 packing information . . . . . . . . . . . . . . . . . . . . 11 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14 contact information. . . . . . . . . . . . . . . . . . . . . 15 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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