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? 2010 f airchild semiconductor corporation FDMA1032CZ rev b 4 (w) FDMA1032CZ 20v complementary powertrench ? mosfet general description this device is designed specifically as a single package solution for a dc/dc 'switching' mosfet in cellular handset and other ultra-portable applications. it features an independent n-channel & p-channel mosfet with low on-state resistance for minimum conduction losses. the gate charge of each mosfet is also minimized to allow high frequency switching directly from the controlling device. the microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching applications. features x q1: n-channel 3.7 a, 20v. r ds(on) = 68 m : @ v gs = 4.5v r ds(on) = 86 m : @ v gs = 2.5v x q2: p-channel C3.1 a, C20v. r ds(on) = 95 m : @ v gs = C4.5v r ds(on) = 141 m : @ v gs = C2.5v x low profile C 0.8 mm maximum C in the new package microfet 2x2 mm x rohs compliant 3 2 1 4 5 6 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter q1 q2 units v ds drain-source voltage 20 C20 v v gs gate-source voltage r12 12 v drain current C continuous (note 1a) 3.7 C3.1 i d C pulsed 6 C6 a power dissipation for single operation (note 1a) 1.4 p d (note 1b) 0.7 w t j , t stg operating and storage junction temperature range C55 to +150 q c thermal characteristics r t ja thermal resistance, junction-to-ambient (note 1a) 86 (single operation) r t ja thermal resistance, junction-to-ambient (note 1b) 173 (single operation) r t ja thermal resistance, junction-to-ambient (note 1c) 69 (dual operation) r t ja thermal resistance, junction-to-ambient (note 1d) 151 (dual operation) q c/w package marking and ordering information device marking device reel size tape width quantity 032 FDMA1032CZ 7 8mm 3000 units FDMA1032CZ 20v complementary powertrench ? mosfet microfet 2x2 pin 1 s1 g1 d2 d1 g2 s2 d1 d2 s1 g1 d1 s2 g2 d2 ? free from halogenated compounds and antimony oxides ? hbm esd protection level > 2 kv (note 3) ? ? ? ? tm may 20 10
FDMA1032CZ rev b 4 (w ) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 p a v gs = 0 v, i d = C250 p a q1 q2 20 C20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 q c i d = C250 a, referenced to 25 q c q1 q2 15 C12 mv/ q c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v v ds = C16 v, v gs = 0 v q1 q2 1 C1 p a i gss gate-body leakage v gs = 12 v, v ds = 0 v all 10 p a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 p a v ds = v gs , i d = C250 a q1 q2 0.6 C0.6 1.0 C1.0 1.5 C1.5 v ' v gs(th) ' t j gate threshold voltage temperature coefficient i d = 250 p a, referenced to 25 q c i d = C250 a, referenced to 25 q c q1 q2 C4 4 mv/ q c v gs = 4.5 v, i d = 3.7 a v gs = 2.5 v, i d = 3.3 a v gs = 4.5 v, i d = 3.7 a, t j = 125 q c q1 37 50 53 68 86 90 m : r ds(on) static drain-source on-resistance v gs = C4.5v, i d = C3.1 a v gs = C2.5 v, i d = C2.5 a v gs = C4.5 v, i d = C3.1 a,t j = 125 q c q2 60 88 87 95 141 140 m : g fs forward transconductance v ds = 10 v, i d = 3.7 a v ds = C10 v, i d = C3.1 a q1 q2 16 C11 s dynamic characteristics c iss input capacitance q1 q2 340 540 pf c oss output capacitance q1 q2 80 120 pf c rss reverse transfer capacitance q1 v ds = 10 v, v gs = 0 v, f = 1.0 mhz q2 v ds = C10 v, v gs = 0 v, f = 1.0 mhz q1 q2 60 100 pf switching characteristics (note 2) t d(on) turn-on delay time q1 q2 8 13 16 24 ns t r turn-on rise time q1 q2 8 11 16 20 ns t d(off) turn-off delay time q1 q2 14 37 26 59 ns t f turn-off fall time q1 v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 : q2 v dd = C10 v, i d = C1 a, v gs = C4.5 v, r gen = 6 : q1 q2 3 36 6 58 ns q g total gate charge q1 q2 4 7 6 10 nc q gs gate-source charge q1 q2 0.7 1.1 nc q gd gate-drain charge q1 v ds = 10 v, i d = 3.7 a, v gs = 4.5 v q2 v ds = C10 v,i d =C 3.1 a, v gs =C 4.5 v q1 q2 1.1 2.4 nc FDMA1032CZ 20v complementary powertrench ? mosfet electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous source-drain diode forward current q1 q2 1.1 C1.1 a v sd source-drain diode forward voltage v gs = 0 v, i s = 1.1 a (note 2) v gs = 0 v, i s = C1.1 a (note 2) q1 q2 0.7 C0.8 1.2 C1.2 v t rr diode reverse recovery time q1 q2 11 25 ns q rr diode reverse recovery charge q1 i f = 3.7 a, di f /dt = 100 a/s q2 i f = C3.1 a, di f /dt = 100 a/s q1 q2 2 9 nc notes: 1. r t ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a) r t ja = 86 c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick pcb. for single operation. (b) r t ja = 173 c/w when mounted on a minimum pad of 2 oz copper. for single operation. (c) r t ja = 69 o c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5 ? x 1.5 ? x 0.062 ? thick pcb. for dual operation. (d) r t ja = 151 o c/w when mounted on a minimum pad of 2 oz copper. for dual operation. 2. pulse test : pulse width < 300 us, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . a)86 o c/w when mounted on a 1 in 2 pad of 2 oz copper. b)173 o c/w when mounted on a minimum pad of 2 oz copper. c)69 o c/w when mounted on a 1 in 2 pad of 2 oz copper. d)151 o c/w when mounted on a minimum pad of 2 oz copper. FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ rev b 4 (w ) FDMA1032CZ rev b 4 (w ) typical characteristics q1 (n-channel) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 2.0v v gs = 4.5v 3.0v 3.5v 1.5v 0.8 1 1.2 1.4 1.6 1.8 2 0123456 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 2.5v 3.5v 4.5v 3.0v 4.0v figure 1. on-region characteristics. figur e 2. on-resistance variation with drain current and gate voltage. 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 3.7a v gs = 4.5v 0.03 0.05 0.07 0.09 0.11 0.13 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.85a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 6 0.511.522.5 v gs , gate to source voltage (v) i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ rev b 4 (w ) typical characteristics q1 (n-channel) 0 2 4 6 8 10 0246810 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 3.7a v ds = 5v 10v 15v 0 100 200 300 400 500 0 5 10 15 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteri stics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = 4.5v single pulse r t ja = 173c/w t a = 25c 10ms 1ms 100us 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r t ja = 173c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r t ja (t) = r(t) * r t ja r t ja =173 c/w t j - t a = p * r t ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ rev b 4 (w) typical characteristics: q2 (p-channel) 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2 -v ds , drain-source voltage (v) -i d , drain current (a) 3.0v 2.5v 3.5v v gs = 45v 2.0v 1.5v 0.6 1 1.4 1.8 2.2 2.6 0123456 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -3.5v -4.5v -3.0v -2.5v -4.0v figure 12. on-region characteristics. figur e 13. on-resistance variation with drain current and gate voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -3.1a v gs = -4.5v 0.04 0.08 0.12 0.16 0.2 024681 0 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -1.55a t a = 125 o c t a = 25 o c figure 14. on-resistance variation with temperature. figure 15. on-resistance variation with gate-to-source voltage. 0 1 2 3 4 5 6 00.511.522.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 16. transfer characteristics. figure 17. bo dy diode forward voltage variation with source current and temperature. FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ rev b 4 (w ) typical characteristics: q2 (p-channel) 0 2 4 6 8 10 0 2 4 6 8 101214 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -3.1a v ds = -5v -15v -10v 0 200 400 600 800 1000 048121620 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 18. gate charge characteristics. figure 19. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms r ds(on) limit v gs = -4.5v single pulse r t ja = 173 o c/w t a = 25 o c 10ms 1ms 100us 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r t ja = 173c/w t a = 25c figure 20. maximum safe operating area. figure 21. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r t ja (t) = r(t) * r t ja r t ja =173 c/w t j - t a = p * r t ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 22. transient thermal response curve. thermal charact erization performed using the conditions described in n ote 1c. transient thermal response will change depending on the circuit board design. FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ 20v complementary powertrench ? mosfet FDMA1032CZ rev b 4 (w) dimensional outline and pad layout f FDMA1032CZ 20v complementary powertrench ? mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform wh en properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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