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hexfet ? power mosfet

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0.1 1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 0.1 1 10 d ds 20 s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -1.75v vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom -1.75v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -1.6a v = -4.5v d gs
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0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -1.6a v = -16v for test circuit see figure 9 d ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.1 1 10 100 1 10 100 operation in this area limited by r ds(on) t = 25c t = 150c single pulse a -i , drain current (a) -v , drain-to-source voltage (v) ds d a j 100 s 1ms 10ms
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1 !" 0.1 % 0 0 k + - q g q gs q gd v g charge )* v ds 90% 10% v gs t d(on) t r t d(off) t f d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
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,-.!/ 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 0 ? !-.! ) !710 ? ) !71 1() aa ? k-)k!
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for p-channel hexfet ? power mosfets
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micro6 (sot23 6l) part marking information micro6 (sot23 6l) package outline dimensions are shown in milimeters (inches) lead assignments recommended footprint dd dd s g 1 2 3 6 5 4 0 -10 o o 0.60 (.023 ) 0.10 (.004 ) 0.20 (.007 ) 0.09 (.004 ) 6x 1.30 (.051 ) 0.90 (.036 ) -c- 0.15 (.006 ) max. 1.45 (.057 ) 0.90 (.036 ) 6 surfaces 0.10 (.004 ) 0.50 (.019 ) 0.35 (.014 ) 6x 2x 0.95 ( .0375 ) 1.75 (.068 ) 1.50 (.060 ) -a- 3.00 (.118 ) 2.80 (.111 ) -b- 3.00 (.118 ) 2.60 (.103 ) 1 2 3 6 5 4 6x 0.65 (.025 ) 2.20 (.087 ) 6x (1.06 (.042 ) 2x 0.95 (.0375 ) notes : 1. dimensioning & tolerancing per ansi y14.5m-1982. 2. controlling dimension : millimeter. 3. dimensions are shown in millimeters (inches). 0.15 (.006 ) m c a s b s e h = irlms6803 2005 w = (1-26) if pr ece ded b y las t digit of calendar year w = (27-52) if pre ce de d b y a l e t t e r a = irlms 1902 b = irlms 1503 c = i r l ms 67 02 d = irlms 5703 f = irlms 4502 e = irlms 6802 g = ir lms 2002 part number code reference: part number y = year w = we e k top cod e lot x 24 0 2010 week wor k 04 4 2004 2001 year 2002 2003 01 1 y 2 3 02 03 2007 2005 2006 2009 2008 7 5 6 8 9 d a w b c week wor k 25 26 2002 year 2001 2003 2004 28 b y a27 c d 29 30 y z b w a c d (as s hown here) indicates l ead-f ree. n ote: a l i ne above the wor k week 51 2008 2006 2007 2009 2010 h f g j k50 52 y x z ! ""

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micro6 tape & reel information (dimensions are shown in milimeters (inches)) 8mm feed direction 4mm notes : 1. outline conforms to eia-481 & eia-541. 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

!"# $$ $%$ ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level micro6 ? ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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