indus t rial po wer c o ntrol silic on c a rbide sc h ottk y dio d e final da ta s heet rev. 2 .0 2014 - 0 6 - 1 0 idw10 g 120c5 b 5 th generation thinq!? 1200 v sic schottky diode
1) j - std20 and jesd22 final data sheet 2 rev. 2 .0 , 20 14 - 0 6 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b thinq! tm sic schottky diode features : ? revolutionary semiconductor material - silicon carbide ? no reverse recovery current / no forward recovery ? temperature independent switching behavior ? low forward voltage even at high operating temperature ? tight forward voltage distribution ? excellent thermal performance ? extended surge current capability ? specified dv/dt ruggedness ? qualified acc ording to jedec 1) for target applications ? pb - free lead plating; rohs compliant benefits ? system efficiency improvement over si diodes ? enabling higher frequency / increased power density solutions ? system size /cost savings due to reduced heatsink requirements and smaller magnetics ? reduced emi ? highest efficiency across the entire load range ? robust diode operation during surge events ? high reliability ? relatedlinks: www.infineon.com/sic applications ? sola r inverters ? u ninterruptable power supplies ? m otor drives ? power factor correction package pin definitions ? pin 1 C anode 1 ? pin 2 and backside C cathode ? pin 3 C anode 2 key performance and package parameter s (leg/device) type v dc i f q c t j,max marking package IDW10G120C5B 1200 v 5 / 1 0 a 28 / 57 nc 175c d1012b5 pg - to247 - 3 1 2 3 case
final data sheet 3 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b table of contents sic schottky diode ................................ ................................ ................................ ................................ ................ 2 table of contents ................................ ................................ ................................ ................................ .................. 3 maximum ratings ................................ ................................ ................................ ................................ ................... 4 thermal resistances ................................ ................................ ................................ ................................ ............. 4 electrical characteristics ................................ ................................ ................................ ................................ ...... 5 electrical characteristics diagrams ................................ ................................ ................................ ..................... 6 package drawings ................................ ................................ ................................ ................................ ................. 9 revision history ................................ ................................ ................................ ................................ .................. 10 disclaimer 10
final data sheet 4 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b maximum ratings parameter symbol value (leg/device) unit repetitive peak reverse voltage v rrm 1200 v continuous forward current for r th (j - c ,max ) t c = 15 6 c, d=1 t c = 135c, d=1 t c = 25c, d=1 i f 5 / 1 0 8 / 16 17 / 3 4 a surge non - repetitive forward current, sine halfwave t c =25c, t p =10ms t c =150c, t p =10ms i f,sm 70 / 140 65 / 130 a non - repetitive peak forward current t c = 2 5 c, t p =10 s i f,max 53 0 / 107 0 a i2t value t c = 25c, t p =10 ms t c = 150c, t p =10 ms i2dt 2 5 / 9 8 21 / 84 a2s diode d v /d t ruggedness v r =0. . .960 v d v /d t 80 v/ns power dissipation for r th(j - c,max) t c = 25c p tot 7 4 / 1 48 w operating and storage temperature t j ;t stg - 55 175 c soldering temperature, wavesoldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s t sold 260 c mounting torque m3 and m 4 screws m 0. 7 nm thermal resistances parameter symbol conditions value (leg/device) unit min. typ. max. characteristic diode thermal resistance, junction C case r th(j - c) - 1.6 /0. 8 2.0 / 1.0 k/w thermal resistance, junction C ambient r th(j - a) leaded - - 62 k/w
final data sheet 5 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b electrical characteristics static characteristic , at tj=25c, unless otherwise specified parameter symbol conditions value (leg/device) unit min. typ. max. dc blocking voltage v dc t j = 25c 1200 - - v diode forward voltage v f i f = 5/10 a, t j =25c i f = 5/ 10 a, t j =150c - - 1.4 1. 7 1.6 5 2 . 30 v reverse current i r v r =1200 v, t j =25c v r =1200 v, t j =150c 3 / 6 14 / 28 40 / 80 21 0 / 420 a dynamic characteristics , at t j =25c, unless otherwise specified parameter symbol conditions value (leg/device) unit min. typ. max. total capacitive charge q c v r = 8 00 v, t j =150c & 25c - 28 / 57 - nc total capacitance c v r =1 v, f =1 mhz v r =400 v, f =1 mhz v r =800 v, f =1 mhz - - - 365 / 730 26 / 51 2 0 / 41 - - - pf ? ? r v c dv v c q 0 ) (
final data sheet 6 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b electrical characteristics diagram s figure 1 . power dissipation per leg as function of case temperature, p tot =f( t c ), r t h(j - c),max figure 2 . diode forward current per leg as function of case temperature , i f =f( t c ), t j 175c, r th(j - c),max , parameter d =duty cycle, v th , r diff @ t j =175c figure 3 . typical forward characteristics per leg, i f =f( v f ), t p = 10 s, parameter: t j figure 4 . typical forward characteristic s in surge current per leg, i f =f( v f ) , t p = 10 s , parameter: t j per leg per leg per leg per leg
final data sheet 7 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b figure 5 . typical capacit ive charge per leg as function of current slope 1 , q c =f( di f / dt ), t j = 150c 1) guaranteed by design. figure 6 . typical reverse characteristics per leg , i r =f( v r ), parameter: t j figure 7 . max. transient thermal impedance per leg, z th,j - c =f( t p ) , parameter: d= t p / t figure 8 . typical capacitance per leg as function of reverse voltage, c= f( v r ); t j =25 c; f =1 mhz per leg per leg per leg per leg 1.e - 09 1.e - 08 1.e - 07 1.e - 06 1.e - 05 1.e - 04 200 400 600 800 1000 1200 i r [a] v r [v] - 55 c 25 c 100 c 150 c 175 c
final data sheet 8 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b figure 9 . typical capacit ively stored energy as function of reverse voltage , per leg , e c =f( v r ) per leg 0 2 4 6 8 10 12 14 16 18 0 200 400 600 800 1000 1200 e c [j] v r [v]
final data sheet 9 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b package drawings
final data sheet 10 rev. 2 .0 , 20 14 - 06 - 1 0 5 th generation thinq!? 1200 v sic schottky diode idw10g120c5 b revision history disclaimer we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 munich, germany ? 201 4 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual pro perty rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - suppo rt, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or prote ct human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. iIDW10G120C5B revision: 2014 - 0 6 - 1 0, rev. 2 .0 previous revision: revision date subjects (major changes since last version) 2 .0 - final data sheet
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