1. product profile 1.1 general description the CLF1G0035-100P and clf1g0035s-100p are 100 w general purpose broadband gan hemts usable from dc to 3.5 ghz. [1] pulsed rf; t p = 100 ? s; ? = 10 %. [1] 2-tone cw; ? f = 100 khz. CLF1G0035-100P; clf1g0035s-100p broadband rf power gan hemt rev. 2 ? 20 june 2013 objective data sheet table 1. cw and pulsed rf application information typical rf performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l g p ? d (mhz) (w) (db) (%) 1-tone cw 2500 100 12.8 51 2600 100 12.7 52.4 2700 100 12.3 50 2800 100 11.7 49 2900 100 11.5 49 3000 100 10.5 47 1-tone pulsed [1] 2500 100 14.2 52 2600 100 14.4 54.4 2700 100 14.1 52.5 2800 100 13.7 51.5 2900 100 13.6 51.8 3000 100 12.7 50.1 table 2. 2-tone cw application information typical 2-tone performance at t case = 25 ? c; i dq = 330 ma; v ds = 50 v in a class-ab broadband demo board. test signal f p l(pep) imd3 (mhz) (w) (dbc) 2-tone cw [1] 2500 20 ? 41.6 2600 20 ? 43 2700 20 ? 41.5 2800 20 ? 41.3 2900 20 ? 41.3 3000 20 ? 40
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 2 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 1.2 features and benefits ? frequency of operation is from dc to 3.5 ghz ? 100 w general purpose broadband rf power gan hemt ? excellent ruggedness (vswr = 10 : 1) ? high voltage operation (50 v) ? thermally enhanced package 1.3 applications 2. pinning information [1] connected to flange. 3. ordering information ? commercial wireless infrastructure (cellular, wimax) ? industrial, scientific, medical ? radar ? jammers ? broadband general purpose amplifier ? emc testing ? public mobile radios ? defense application table 3. pinning pin description simplified outline graphic symbol CLF1G0035-100P (sot1228a) 1drain1 2drain2 3gate1 4gate2 5source [1] clf1g0035s-100p (sot1228b) 1drain1 2drain2 3gate1 4gate2 5source [1] d d d d d d table 4. ordering information type number package name description version CLF1G0035-100P - flanged ceramic package; 2 mounting holes; 4 leads sot1228a clf1g0035s-100p - earless flanged ceramic package; 4 leads sot1228b
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 3 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 4. limiting values 5. thermal characteristics [1] t j is measured via ir scan with case temperature of 85 ? c and power dissipation of 108.6 w. 6. characteristics table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 150 v v gs gate-source voltage ? 8+3 v i gf forward gate current external r g = 5 ? -36ma t stg storage temperature ? 65 +150 ?c t j junction temperature measured via ir scan - 250 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t j = 200 ?c [1] 1.02 k/w table 7. dc characteristics t case = 25 ? c; per section; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs = ? 7 v; i ds =12ma 150 - - v v gs(th) gate-source threshold voltage v ds = 0.1 v; i ds =12ma ? 2.4 ? 2 ? 1.6 v i dsx drain cut-off current v ds =10v; v gs =3 v - 8.8 - a g fs forward transconductance v ds =10 v; v gs =0v - 1.8 - s table 8. rf characteristics test signal: pulsed rf; f = 3000 mhz; t p = 100 ? s; ? = 10 %; rf performance at v ds =50v; i dq = 330 ma; t case =25 ? c; unless otherwise specified in a class-ab production circuit. symbol parameter conditions min typ max unit ? d drain efficiency p l = 100 w - 50 - % g p power gain p l = 100 w - 14 - db rl in input return loss p l = 100 w - ? 6- db p droop(pulse) pulse droop power p l = 100 w - 0.2 - db t r rise time p l = 100 w - 5 - ns t f fall time p l = 100 w - 5 - ns
CLF1G0035-100P_1g0035s-100p all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. objective data sheet rev. 2 ? 20 june 2013 4 of 16 nxp semiconductors clf1g0035(s)-100p broadband rf power gan hemt 7. application information 7.1 demo circuit printed-circuit board (pcb) material: tmm6, ? r = 6.0, thickness = 0.635 mm, 28.35 grams copper on each side. see table 9 for list of components. fig 1. the broadband amplifier (2500 mhz to 3000 mhz) demo circuit outline table 9. list of components see figure 1 . component description value remarks c1, c10 multilayer ceramic chip capacitor 20 pf atc800a c2, c3,c4, c7 multilayer ceramic chip capacitor 1 nf atc700a c5, c8 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v c6, c9 multilayer ceramic chip capacitor 10 ? f, 5 0 v c11, c12 electrolytic capacitor 220 ? f, 5 0 v q1 transistor - CLF1G0035-100P r1 resistor 4.7 ? r2 resistor 0.01 ? lvk25r01, 2w, 1 % tolerance d d d & |