feb.1999 mitsubishi transistor modules QM50CY-H medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application ups, cvcf QM50CY-H ? i c collector current .......................... 50a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 94 34 label tab#110, t=0.5 80 (7) (7) 20 20 27 b 2 e 2 b 1 f 6.5 c 1 12 e 1 e 2 c 2 10.5 13 10.5 31 m5 (8) 22.5 6.5 c 2 e 1 e 2 b 2 e 2 c 1 e 1 b 1 e 1
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m6 typical value ratings 600 600 600 7 50 50 310 3 500 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =50a, i b =0.65a Ci c =50a (diode forward voltage) i c =50a, v ce =2v/5v v cc =300v, i c =50a, i b1 =Ci b2 =1a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 1.0 1.0 200 2.0 2.5 1.75 1.5 12 3.0 0.4 1.3 0.15 mitsubishi transistor modules QM50CY-H medium power switching use insulated type
feb.1999 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 t j =25? t j =125? i b =0.65a ? 10 v be(sat) v ce(sat) 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1.2 3.2 2.8 2.4 2.0 1.6 ? 10 t j =25? v ce =2.0v 100 80 60 40 20 0 012345 t j =25? i b =0.1a i b =0.2a i b =1a i b =0.65a i b =0.3a 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? v ce =5.0v v ce =2.0v 0 10 7 5 4 3 2 7 5 4 3 2 0 1 2 3 4 5 ? 10 t j =25? t j =125? i c =20a ? 10 i c =30a i c =50a 7 5 4 3 2 7 5 4 3 2 23457 23457 0 10 1 10 2 10 0 10 1 10 2 t s t f t on t j =25? t j =125? i b1 =? b2 =1a v cc =300v performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM50CY-H medium power switching use insulated type
feb.1999 ? 10 ? 10 ? 10 2 10 1 10 0 10 ? 10 0 10 3 10 2 10 1 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 23457 0 10 0 10 7 5 4 3 3 2 2 t s t f 3457 2 10 t j =25? t j =125? v cc =300v i b1 =1a i c =50a 160 0 0 200 400 600 800 120 80 40 i b2 =?a t j =125? 140 100 60 20 ?a ?a ?0a 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.2 0.1 0 7 5 3 2 1 10 0 10 0 10 444 4 5 3 24 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0.4 2.4 2.0 1.6 1.2 0.8 t j =25? t j =125? 0 10 collector dissipation second breakdown area 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 1ms dc 10ms 100? 500? non?epetitive switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM50CY-H medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 7 5 4 3 2 7 5 4 3 2 0 100 200 300 400 500 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 444 427 5 34 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 44 4 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 0 10 1 10 2 10 t j =25? t j =125? v cc =300v i b1 = i b2 =1a ? 10 i rr q rr t rr t rr ( m s) i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM50CY-H medium power switching use insulated type z th (jCc) ( c/ w)
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