1 features construction o maximum rating (t a =25 c unless otherwise noted) surface mount schottk y barrier diodes surface mount schottk y barrier diodes small signal schottky diodes 100m amperes 40 volts s o t - 3 2 3 ( s c - 7 0 ) .0 12 (0 .3 0) .0 16 (0 .4 0) .0 45 (1 .1 5) .0 53 (1 .3 5) .0 79 (2 .0 0) .0 94 (2 .4 0) .0 04 (0 .1 0) .0 09 8( 0. 25 ) .0 17 (0 .4 2) .0 21 (0 .5 3) .0 31 (0 .8 0) .0 39 (1 .0 0) 0. 00 .0 04 (0 .1 0) .0 12 (0 .3 0) .0 12 (0 .4 0) .0 71 (1 .8 0) .0 87 (2 .2 0) .0 04 (0 .1 0) .0 09 8( 0. 25 ) .0 26 (0 .6 5) _ top view www.paceleader.tw PSD451F *small mold type. *low vf *high reliability. silicon epitaxial planer characteristic r e v erse v oltage (repetitive peak) r e v erse v oltage (dc) average rectified forward current op er a ting j unc tion t emp er a tur e r ange s t or age t emp er a tur e r ange symbol v rm v r i o i fsm t j t st g value unit 40 40 100 125 150 v olts ma ma a c c f or w ar d c ur r ent surge peak (60hz , 1cyc ) 1 o electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol f or w ar d v oltage i f =100ma i f =10ma capacitance between terminals ( v r =10v, f=1.0mhz) r e v erse currect v f 1 v f 2 c t i r min t yp max unit - - - - - - 0.55 0.34 6.0 - - 30 v olts f p a dc ( v r =10v )
0 1 100m 10m 1m 100 10 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0.7 ta = 125 c 75 c 25 c 25 c pulse measurement typ. forward current : i f ( a) forward voltage : v f ( v) fig. 1 forward characteristics 0 5 1 0 1 5 2 0 2 5 3 0 35 10m 1m 100 10 1 0.1 ta = 125 c 75 c 25 c pulse measurement typ. reverse current : i r ( a) reverse voltage : v r ( v) fig. 2 reverse characteristics 0 5 1 0 1 5 2 0 25 0.1 1 10 100 reverse voltage : v r (v ) capacitance between terminals : c t ( pf) fig. 3 capacitance between terminals characteristics 0 0 20 40 60 80 100 2 5 5 0 7 5 10 0 125 io current (%) ambient temperature : ta ( c ) fig. 4 derating curve (mounting on glass epoxy pcbs) surface mount schottk y barrier diodes surface mount schottk y barrier diodes PSD451F 2 www.paceleader.tw
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