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hexfet power mosfet notes through are on page 8 so-8 d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7
applications high frequency 3.3v and 5v input point of-load synchronous buck converters for netcom and computing applications power management for netcom, computing and portable applications thermal resistance symbol parameter typ. max. units r jl junction-to-drain lead ??? 42 r ja junction-to-ambient ??? 62.5 c/w absolute maximum ratings symbol parameter max. units v ds drain-source voltage 12 v v gs gate-to-source voltage 12 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 10 i d @ t a = 70c continuous drain current, v gs @ 4.5v 7.9 a i dm pulsed drain current 79 p d @t a = 25c maximum power dissipation 2.0 w p d @t a = 70c maximum power dissipation 1.3 w linear derating factor 1 6 mw/c t j , t stg junction and storage temperature range -55 to + 150 c form quantity tube/bulk 95 IRF7910PBF-1 tape and reel 4000 irf7910trpbf-1 package type standard pack orderable part number IRF7910PBF-1 so-8 base part number features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 12 v r ds(on) max (@v gs = 4.5v) 15 q g (typical) 17 nc i d (@t a = 25c) 10 a m

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! dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter min. typ. max. units conditions g fs forward transconductance 18 ??? ??? s v ds = 6.0v, i d = 8.0a q g total gate charge ??? 17 26 i d = 8.0a q gs gate-to-source charge ??? 4.4 ??? nc v ds = 6.0v q gd gate-to-drain ("miller") charge ??? 5.2 ??? v gs = 4.5v q oss output gate charge ??? 16 ??? v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 9.4 ??? v dd = 6.0v t r rise time ??? 22 ??? i d = 8.0a t d(off) turn-off delay time ??? 16 ??? r g = 1.8 t f fall time ??? 6.3 ??? v gs = 4.5v c iss input capacitance ??? 1730 ??? v gs = 0v c oss output capacitance ??? 1340 ??? v ds = 6.0v c rss reverse transfer capacitance ??? 330 ??? pf ? = 1.0mhz static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 12 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.01 ??? v/c reference to 25c, i d = 1ma ??? 11.5 15 v gs = 4.5v, i d = 8.0a ??? 20 50 v gs = 2.8v, i d = 5.0a v gs(th) gate threshold voltage 0.6 ??? 2.0 v v ds = v gs , i d = 250 a ??? ??? 100 a v ds = 9.6v, v gs = 0v ??? ??? 250 v ds = 9.6v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.85 1.3 v t j = 25c, i s = 8.0a, v gs = 0v ??? 0.70 ??? t j = 125c, i s = 8.0a, v gs = 0v t rr reverse recovery time ??? 50 75 ns t j = 25c, i f = 8.0a, v r =12v q rr reverse recovery charge ??? 60 90 nc di/dt = 100a/ s t rr reverse recovery time ??? 51 77 ns t j = 125c, i f = 8.0a, v r =12v q rr reverse recovery charge ??? 60 90 nc di/dt = 100a/ s s d g diode characteristics 1.8 79 " v sd diode forward voltage symbol parameter typ. max. units e as single pulse avalanche energy ??? 100 mj i ar avalanche current ??? 8.0 a avalanche characteristics

! fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 1.0 2.0 3.0 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 20 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 r , drain-to-source on resistance (normalized) ds(on) v = i = gs d 4.5v 10a # !$
#%&'() 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20 s pulse width tj = 150c *

0.1 1 10 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20 s pulse width tj = 25c *

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! fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 10203040 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 9.6v v ds = 6.0v i d = 8.0a for test circuit see figure 13

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! fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms * 1 !"#$% 0.1 % * -# * + - * fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 i , drain current (a) d # & !(#%&'()

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! fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 50 100 150 200 250 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.6a 6.4a 8.0a 0 20406080100 i d , drain current (a) 0.0120 0.0125 0.0130 0.0135 0.0140 0.0145 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 4.5v 2. 5 3. 5 4. 5 5. 5 v gs , gate -to -source voltage (v) 0. 010 0. 013 0. 015 0. 018 0. 020 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 8.0a

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! so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches)) repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 3.2mh, r g = 25 , i as = 8.0a. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t<10 sec note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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