bipolarics inc. part number B15V180C g pe = 14.0 db @ 1.0 ghz p 1db power output at 1 db compression: f = 1.0 ghz dbm 27.0 g 1db gain at 1db compression: f = 1.0 ghz db 9.0 collector efficiency class a % 30 c cb collector base capacitance: f = 1 mhz, i e = 0 pf 0.7 1.0 h fe forward current transfer ratio: v ce = 8v, i c =50 ma 20 60 100 p t total power dissipation w 1.5 v cbo collector-base voltage 40 v symbol parameters rating units symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 100 ma, class a, unless stated product data sheet silicon microwave power transistor v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 3.0 v i c collector current (instantaneous) 160 ma t j junction temperature 200 o c t stg storage temperature -65 to +150 o c description and applications: bipolarics' B15V180C is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 ghz. uniformity and reliability are assured by the use of advanced process techniques: ion implanted junctions, ion implanted ballast resistors and gold metallization. when the b20v140 is bonded common emitter, linear output power of 1 watt can be achieved. by driving part type b20v180 or b20v1160 combination thereof, higher output power can be achieved. absolute maximum ratings: features: ? high output power 30.0 dbm, p 1db @ 1.0 ghz high gain bandwidth product f t = 6.0 ghz @ i c = 100 ma high gain performance data: electrical characteristics (t a = 25 o c) ceramic, beo & stripline packages available
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