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3LP03M rev.0 i page 1 of 4 i www.onsemi.com features low on-resistance. high-speed switching. 2.5v drive. high esd voltage (typ 300v) [built-in one side diode for protection between gate-to-source]. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss - -30 v gate-to-source voltage (*1) v gss - -10 v drain current (dc) i d -- 0 .25 a drain current (pulse) i dp pw 10 s, duty cycle 1% --1 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c ( * 1) : note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d = --1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds = --30v, v gs =0 --1 a gate-to-source leakage current i gss v gs = --8v, v ds =0 --1 a cutoff voltage v gs (off) v ds = --10v, i d = --100 a -- 0.4 --1.4 v forward transfer admittance ? yfs ? v ds = --10v, i d = --120ma 0.24 0.4 s r ds (on)1 i d = --120ma, v gs = --4v 1.5 1.9 ? static drain-to-source on-state resistance r ds (on)2 i d = --60ma, v gs = --2.5v 2.0 2.8 ? r ds (on)3 i d = --10ma, v gs = --1.5v 4.0 8.0 ? input capacitance ciss v ds = --10v, f=1mhz 40 pf output capacitance coss v ds = --10v, f=1mhz 8 pf reverse transfer capacitance crss v ds = --10v, f=1mhz 4.5 pf marking : xg continued on next page. ordering number : enn8154 3LP03M p-channel silicon mosfet general-purpose switching device applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 3LP03M/d
3LP03M rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit t urn-on delay time t d (on) see specified test circuit. 9.5 ns rise time t r see specified test circuit. 5 ns t urn-off delay time t d (off) see specified test circuit. 15 ns fall time t f see specified test circuit. 13 ns t otal gate charge qg v ds = --10v, v gs = --4v, i d = --250ma 0.8 nc gate-to-source charge qgs v ds = --10v, v gs = --4v, i d = --250ma 0.3 nc gate-to-drain ?iller?charge qgd v ds = --10v, v gs = --4v, i d = --250ma 0.2 nc diode forward voltage v sd i s = --250ma, v gs =0 --0.9 --1.2 v package dimensions switching time test circuit unit : mm 2158a 1 : gate 2 : source 3 : drain sanyo : mcp 0.65 0.65 2.0 0.9 0.6 0.3 12 3 2.1 1.25 0.425 0.425 0.2 0.3 0.15 0 to 0.1 pw=10 s d.c. 1% p. g 50 ? g s d i d = --120ma r l =125 ? v dd = --15v v out 3LP03M v in 0v -- 4 v v in gate-to-source voltage, v gs -- v r ds (on) -- v gs ambient temperature, ta -- c r ds (on) -- ta it07656 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it07653 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it07654 -- 0 . 1 -- 0 . 5 0 0 0 -- 0 . 2 -- 0 . 3 -- 0 . 4 -- 0 . 5 -- 0 . 6 -- 0 . 7 -- 0 . 8 -- 0 . 9 - -1.0 0 -- 0 . 25 -- 0 . 20 -- 0 . 15 -- 0 . 10 -- 0 . 05 -- 0 . 30 - -6.0v - -4.5v -- 4.0v -- 3.5v -- 3.0v -- 2.5v -- 2.0v v gs = -- 1.5v -- 0 . 45 -- 0 . 40 -- 0 . 35 -- 0 . 30 -- 0 . 25 -- 0 . 20 -- 0 . 15 -- 0 . 10 -- 0 . 05 -- 0 . 50 -- 1 . 0 -- 1 .5 --2.0 --2.5 --3.0 --3.5 t a= - -25 c - -25 c 25 c 25 c ta= 75 c 75 c v ds = --10v -- 4 0 -- 6 0 -- 2 0 0 20 40 60 80 100 120 140 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d = --60ma, v gs = --2.5v i d = -- 120ma, v gs = -- 4.0v static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? it08162 -- 1 0 1.0 0 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 2.0 3.0 4.0 4.5 0.5 1.5 2.5 3.5 5.0 -- 1 0 t a=25 c -- 60ma i d = -- 120ma
3LP03M rev.0 i page 3 of 4 i www.onsemi.com 0 0 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - -4.0 - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 t otal gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it07661 r ds (on) -- i d drain current, i d -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf - -0.1 23 5 7 drain current, i d -- a sw time -- i d switching time, sw time -- ns it07659 it07658 diode forward voltage, v sd -- v i f -- v sd drain current, i d -- a it07657 - -0.001 0.1 0.01 - -0.01 23 57 - -0.1 22 357 357 - -1.0 7 5 3 2 1.0 7 5 3 2 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d - -0.8 --1.0 - -0.6 --1.2 --1.4 - -0.2 --0.4 0 - -0.001 - -0.1 - -0.01 7 5 3 2 7 5 3 2 - -1.0 7 5 3 2 forward current, i f -- a t f t r v ds = --10v i d = --0.25a r ds (on) -- i d drain current, i d -- a r ds (on) -- i d drain current, i d -- a v ds = --10v t a= - -25 c 75 c 25 c 10 7 5 3 2 3 2 v gs =0 25 c - -25 c ta= 75 c t d (off) t d (on) v ds = --15v v gs = --4v static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? 23 57 23 57 - -0.01 - -0.1 --1.0 it08164 0- -30 - -10 --15 --20 --25 -- 5 it08163 0 60 50 20 30 10 40 coss ciss v gs = -- 4v ta= 75 c 25 c -- 25 c 5 7 1.0 2 3 5 5 7 1.0 2 3 23 57 23 57 - -0.01 - -0.1 --1.0 it08165 v gs = -- 2.5v ta= 75 c -- 25 c 5 7 2 3 23 57 23 57 - -0.01 - -0.1 --1.0 it08166 v gs = -- 1.5v 25 c ta= 75 c -- 25 c 25 c crss
3LP03M rev.0 i page 4 of 4 i www.onsemi.com 0 0 20 40 60 80 100 120 0.05 0.10 0.15 0.20 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it07665 3LP03M/d

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