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this is information on a product in full production. august 2014 docid18354 rev 13 1/18 18 strh40p10 rad-hard p-channel 100 v, 34 a power mosfet datasheet - production data figure 1. internal schematic diagram features ? fast switching ? 100% avalanche tested ? hermetic package ? 100 krad tid ? see radiation hardened applications ? satellite ? high reliability description this p-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. this power mosfet is fully escc qualified. note: contact st sales office for information about the specific conditions for product in die form and for other packages. to-254aa 1 2 3 d (1) g (3) s (2) sc06140p v bdss i d r ds(on) q g 100 v 34 a 0.060 ohm 162 nc table 1. device summary part number escc part number quality level package lead finish mass (g) temp. range eppl STRH40P10HY1 - engineering model to-254aa gold 10 -55 to 150c - strh40p10hyg 5205/025/01 escc flight target strh40p10hyt 5205/025/02 solder dip - www.st.com
contents strh40p10 2/18 docid18354 rev 13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid18354 rev 13 3/18 strh40p10 electrical ratings 1 electrical ratings (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 100 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) 34 a i d (3) drain current (continuous) at t c = 100 c 21 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 136 a p tot (3) total dissipation 176 w dv/dt (5) 5. i sd 40 a, di/dt 100 a/s, v dd = 80% v (br)dss. peak diode recovery voltage slope 2.5 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.71 c/w r thc-s case-to-sink typ 0.21 c/w
electrical ratings strh40p10 4/18 docid18354 rev 13 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 17 a e as (1) 1. maximum rating value. single pulse avalanche energy (starting t j =25 c, i d = 17 a, v dd =50 v) 1133 mj e as single pulse avalanche energy (starting t j =110 c, i d = 17 a, v dd =50 v) 332 mj e ar repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 25 mj repetitive avalanche (v dd = 50 v, i ar = 17 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 8
docid18354 rev 13 5/18 strh40p10 electrical characteristics 2 electrical characteristics (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 100 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on- resistance v gs = 12 v; i d = 17 a 0.060 0.075 table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1 mhz 3710 510 204 4640 635 255 5570 760 306 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 50 v, i d = 34 a, v gs =12 v 130 14 32 162 18 40 194 22 48 nc nc nc r g (1) 1. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.5 table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 50 v, i d = 17 a, r g = 4.7 , v gs = 12 v 15 19 68 34 24 31 129 46 33 43 190 58 ns ns ns ns
electrical characteristics strh40p10 6/18 docid18354 rev 13 table 8. pre-irradiation source drain diode (1) 1. refer to the figure 16 . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 34 136 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 30 a, v gs = 0 1.1 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 25 c 276 345 4.1 316 414 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 150 c 473 7.1 133 ns c a
docid18354 rev 13 7/18 strh40p10 radiation characteristics 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested (using the to-3 package) for total ionizing dose according to the escc 22900 specification, window 1) and single event effect according to the mil-std-750e tm1080 up to a fluency level of 3e+5 ions/cm2. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: from +15 v applied and v ds = 0 v during irradiation the following parameters are measured (see table 9 , tab le 10 and table 11 ): ? before irradiation ? after irradiation ? after 24 hrs @ room temperature ? after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 100 k rad(si)) symbol parameter test conditions drift values unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 12 v v gs = -12 v 1.5 -1.5 a bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma +5% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma +150% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 20 a -4% / +35% table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. parameter not measured after irradiation but guaranteed by the results obtained during the evaluation phase that proves this parameter is directly correlated to the v gs(th) shift. symbol parameter test conditions drift values unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 50 v, i ds = 20 a -15% / +5% nc q gs gate-source charge -5% / +200% q gd gate-drain charge -10% / +100%
radiation characteristics strh40p10 8/18 docid18354 rev 13 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: ? seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if the fluence reaches 3e+5 ions/cm2. ? segr test: the gate current is monitored every 200 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = 2 v @v gs = 5 v @v gs = 10 v @v gs = 15 v kr 32 768 94 - -60 - - - 756 92 - - - - -20 cu 28 285 43 -100 - -60 - - xe 60 1217 89 - -30 - - -
docid18354 rev 13 9/18 strh40p10 radiation characteristics figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9 '69 '6pd[ 9 *6 9 &x0h9fppj .u0h9fppj ;h0h9fppj
electrical characteristics (curves) strh40p10 10/18 docid18354 rev 13 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms tj=150c tc=25c sinlge pulse dc operation hv32530v1 i d 60 40 20 0 0 10 v ds (v) 15 (a) 5 4 v 80 100 5 v v gs = 12 v 120 140 hv32500v1 i d 60 40 20 10 0 4 v gs (v) 8 (a) 2 6 10 80 v ds = 3 v t j = 125c t j = -55c t j = 25c hv32505v1 -v gs 6 4 2 0 0 20 q g (nc) (v) 8 60 10 v dd =50 v 100 140 i d = -34 a i d = -17 a i d = -8.5 a hv32510v1 c 3100 2100 1100 100 0 40 v ds (v) (pf) 20 4100 60 ciss coss crss 5100 6100 80 hv32520v1
docid18354 rev 13 11/18 strh40p10 electrical characteristics (curves) figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature figure 14. source drain-diode forward characteristics
test circuits strh40p10 12/18 docid18354 rev 13 5 test circuits figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 16. source drain diode figure 17. unclamped inductive load test circuit (single pul se and repetitive)
docid18354 rev 13 13/18 strh40p10 package mechanical data 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 18. to-254aa drawing
package mechanical data strh40p10 14/18 docid18354 rev 13 table 13. to-254aa mechanical data dim. mm inch min. typ. max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.56 3.81 0.140 0.150 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.02 1.14 0.035 0.040 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.571 m 2.92 3.18 n0.71 r1 1.00 0.039 r2 1.52 1.65 1.78 0.060 0.065 0.070
docid18354 rev 13 15/18 strh40p10 order codes 7 order codes for specific marking only the complete structure is: ? st logo ? esa logo ? date code (date of sealing of the package): yywwa ?yy: year ? ww: week number ? a: week index ? escc part number (as mentioned in the table) ? warning signs (e.g. beo) ? country of origin: fr (france) part serial number within in the assembly lot contact st sales office for information about the specific conditions for products in die form and for other packages. table 14. ordering information order code escc part number quality level eppl package lead finish marking packing STRH40P10HY1 - engineering model - to-254aa gold STRH40P10HY1 + beo strip pack strh40p10hyg 5205/025/01 escc flight target 520502501r + beo strh40p10hyt 5205/025/02 - solder dip 520502502r + beo
shipping details strh40p10 16/18 docid18354 rev 13 8 shipping details 8.1 date code the date code for ?escc flight? is structured as follows: yywwz where: ? yy: last two digits of year ? ww: week digits ? z: lot index in the week 8.2 documentation the table below provide a summary of the documentation provided with each type of products. table 15. documentation provide for each type of product quality level radiation level documentation engineering model - - escc flight 100 krad certificate of conformance radiation verification test report
docid18354 rev 13 17/18 strh40p10 revision history 9 revision history table 16. document revision history date revision changes 23-dec-2010 1 first release. 02-feb-2011 2 updated figure 1 . 03-may-2011 3 updated figure 1 . 22-jun-2011 4 updated features on coverpage. 25-jul-2011 5 updated order codes in table 1: device summary and table 14: ordering information . minor text changes. 09-nov-2011 6 updated dynamic values on table 6: pre-irradiation dynamic , table 7: pre-irradiation switching times and table 8: pre-irradiation source drain diode . 12-dec-2012 7 updated figure 2: single event effect, soa 17-dec-2012 8 modified: t d(off) value in table 7: pre-irradiation switching times 13-jun-2013 9 modified: table 1: device summary and table 14: ordering information 09-sep-2013 10 updated features in cover page. 27-sep-2013 11 updated i ar value in table 4: avalanche characteristics . 17-dec-2013 12 total dose radiation testing parameters changed in section 3: radiation characteristics . 25-aug-2014 13 updated figure 7: transfer characteristics .
strh40p10 18/18 docid18354 rev 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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