feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type CR2AM application control of household equipment such as electric blandets, leakage protector, static switch, other general purpose control applications, ignitors ?i t (av) ........................................................................... 2a ?v drm ..............................................................400v/600v ?i gt ......................................................................... 100 m a symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings 8 400 500 320 400 320 12 600 720 480 600 480 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t c =75 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c g ratings 3.15 2.0 20 1.6 0.5 0.1 6 6 0.3 C40 ~ +125 C40 ~ +125 1.6 ] 1. with gate-to-cathode resistance r gk =1k w type name @ voltage class 23 1 3.2?.2 f 3.2?.1 10 max 4 23.7?.5 8 max 1.2?.1 4 max 12 min 0.8 0.8 2.5 2.5 1.5 min 10 max 4.5 max 1.55?.1 0.5 0.5 * * measurement point of case temperature outline drawing dimensions in mm to-202 2 1 3 1
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feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type test conditions t j =125 c, v rrm applied t j =125 c, v drm applied, r gk =1k w t c =25 c, i tm =4a, instantaneous value t j =25 c, v d =6v, i t =0.1a t j =125 c, v d =1/2v drm , r gk =1k w t j =25 c, v d =6v, i t =0.1a junction to case ] 2 unit ma ma v v v m a c/w typ. symbol i rrm i drm v tm v gt v gd i gt r th (j-c) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance electrical characteristics ] 2. the method point for case temperature is at the anode tab 1.5mm away from the molded case. ] 3. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) the above values do not include the current flowing through the 1k w resistance between the gate and cathode. b 20 ~ 50 item i gt ( m a) a 1 ~ 30 c 40 ~ 100 limits min. 0.2 1 max. 0.1 0.1 1.8 0.8 100 ] 3 10 10 0 23 5710 1 8 4 23 5710 2 44 12 16 20 6 2 10 14 18 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? t c = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type 10 2 10 ? 10 0 10 1 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 57 23 57 10 ? 10 2 23 57 23 57 23 5 v fgm = 6v v gt = 0.8v i gt = 100? (t j = 25?) p gm = 0.5w p g(av) = 0.1w v gd = 0.15v i fgm = 0.3a 160 120 60 40 20 140 100 80 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q 360 resistive, inductive loads q = 30 60 120 90 180 ?0 ?0 ?0 0 20 40 60 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?0 ?0 20 80 0.2 0.5 0.9 060 40 100 typical example distribution 5.0 3.5 1.5 1.0 0.5 4.5 4.0 3.0 2.5 2.0 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q 360 q = 30 60 120 90 180 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ? 5710 ? 23 5710 ? 23 5710 0 3 2 10 2 7 5 3 2 7 5 10 0 7 5 3 2 junction to ambient junction to case allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics transient thermal impedance (?/ w) time (s) gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type 5.0 3.5 1.5 1.0 0.5 4.5 4.0 3.0 2.5 2.0 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 120 90 180 q q 360 without fin resistive loads natural convection 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.8 1.2 1.4 0.2 0.6 1.0 q = 30 60 120 90 180 without fin q 360 resistive, inductive loads natural convection 160 120 60 40 20 140 100 80 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q = 30 90 180 q 360 resistive, inductive loads natural convection 50 50 t1.2 all fins are black painted iron and greased 160 120 60 40 20 140 100 80 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q = 30 90 q q 360 180 resistive loads natural convection 50 50 t1.2 all fins are black painted iron and greased 160 120 60 40 20 140 100 80 0 3.2 0 0.8 1.6 2.4 2.8 0.4 1.2 2.0 q q 360 resistive loads q = 30 60 90 120 180 allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a)
feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type 23 10 ? 5710 0 23 5710 1 23 5710 2 500 0 200 300 400 100 # 1 ?0 ?0 0 20 40 60 80 100 120 160 0 80 100 120 140 40 60 20 typical example 140 120 60 ?0 ?0 ?0 0 20 40 80 100 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? v d = 12v r gk = 1k w ?0 ?0 0 20 40 60 80 100 120 160 0 80 100 120 140 40 60 20 r gk = 1k w typical example 23 10 ? 5710 0 23 5710 1 23 5710 2 0 80 100 120 40 60 20 typical example t j = 125? breakover voltage vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) breakover voltage ( r gk = r k w ) breakover voltage ( r gk = 1k w ) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) 23 10 0 5710 1 23 5710 2 23 5710 3 0 120 40 60 80 100 20 t j = 125? r gk = 1k w holding current vs. junction temperature holding current (ma) junction temperature (?) holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r k w ) holding current ( r gk = 1k w ) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? ) repetitive peak reverse voltage vs. junction temperature junction temperature (?) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 ? ) typical example i gt (25?) # 1 19? # 2 66? # 2 # 1 distribution i gt (25?) = 35? typical example # 2 typical example i gt (25?) i h (1k w ) # 1 25? 0.9ma # 2 48? 1.3ma t j = 25?
feb.1999 mitsubishi semiconductor thyristor ? CR2AM low power use non-insulated type, glass passivation type 10 2 10 0 10 1 10 3 7 5 3 2 23 57 10 2 4 10 4 7 5 3 2 4 42357 4 gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) # 1 # 2 typical example i gt (dc) # 1 19? # 2 66? t j = 25?
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