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this is information on a product in full production. april 2014 docid15387 rev 6 1/17 2n5154hr hi-rel npn bipolar transistor 80 v - 5 a datasheet - production data figure 1. internal schematic diagram features ? hi-rel npn bipolar transistor ? linear gain characteristics ? escc qualified ? european preferred part list - eppl ? radiation level: lot specific total dose contact marketing for specified level description the 2n5154hr is a silicon planar epitaxial npn transistor in to-39, to-257 and smd.5 packages. it is specifically designed for aerospace hi-rel applications and escc qualified according to the 5203-010 specification. in case of conflict between this datasheet and escc detailed specification, the latter prevails. to-257 1 2 3 to-39 smd.5 3 2 1 bv ceo 80 v i c (max) 5 a h fe at 10 v - 150 ma > 70 operating temperature range - 65 c to + 200 c table 1. device summary device qualification system agency specification package radiation level eppl 2n5154rshrg escc 5203/010 smd.5 emitter on pin 1 - 100 krad: escc ldr yes 2n5154shrg escc 5203/010 smd.5 emitter on pin 1 yes 2n5154hrx escc 5203/010 to-39 - 2n5154resyhrx escc 5203/010 to-257 100 krad: escc ldr - 2n5154esyhrx escc 5203/010 to-257 - - www.st.com
contents 2n5154hr 2/17 docid15387 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 to-39 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 to-257 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 smd.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid15387 rev 6 3/17 2n5154hr electrical ratings 17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 100 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 6 v i c collector current 5 a p tot total dissipation at t amb 25 c for to-39 for to-257 t c 25 c for to-39 for to-257 for smd.5 1 3.3 8.75 35 35 w w w w w t stg storage temperature - 65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data for through-hole packages symbol parameter to-39 to-257 unit r thjc r thja thermal resistance junction-case __ max thermal resistance junction-ambient __ max 20 175 5 53 c/w table 4. thermal data for smd package symbol parameter smd.5 unit r thjc thermal resistance junction-case __ max 5 c/w
electrical characteristics 2n5154hr 4/17 docid15387 rev 6 2 electrical characteristics t case = 25 c unless otherwise specified. table 5. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (i e = 0) v cb = 60 v v cb = 60 v t amb = 150 c 1 10 a a i ebo emitter cut-off current (i c = 0) v eb = 5 v v eb = 6 v 1 1 a ma i ceo collector cut-off current (i b = 0) v ce = 40 v 50 a v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 100 ma 80 v v ce(sat) (1) collector-emitter saturation voltage i c = 5 a i b = 0.5 a i c = 2.5 a i b = 250 ma 1.5 1.45 v v v be(sat) (1) base-emitter saturation voltage i c = 2.5 a i b = 0.25 a i c = 5 a i b = 0.5 a 1.45 2.2 v v h fe (1) dc current gain i c = 50 ma v ce = 5 v i c = 2.5 a v ce = 5 v i c = 5 a v ce = 5 v i c = 2.5 a v ce = 5 v t amb = - 55 c 50 70 40 35 200 h fe ac forward current transfer ratio v ce = 5 v i c = 500 ma f = 20 mhz 3.5 c obo output capacitance i e = 0 v cb = 10 v f = 1 mhz 250 pf t on turn-on time v cc = 30 v v bb = 4 v v in ? 51 v i c = 5 a i b1 = - i b2 = 0.5 a 0.5 s t off turn-off time v cc = 30 v v bb = 4 v v in ? 51 v i c = 5 a i b1 = - i b2 = 0.5 a 1.3 s
docid15387 rev 6 5/17 2n5154hr electrical characteristics 17 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. h fe @v ce = 5 ,&>$@ 9&(>9@ '& xv xv pv ic (a) 0.01 0.1 1 10 10 100 1e3 -55c 25c 125c am12790v1 figure 4. v cesat @ h fe = 10 figure 5. v besat @ h fe = 10 am12791v1 ic (a) 0.01 0.1 1 10 0.01 0.1 1 -55c 25c 125c am12792v ic (a) 0.01 0.1 1 1 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 -55c 25c 125c
electrical characteristics 2n5154hr 6/17 docid15387 rev 6 figure 6. v beon @ v ce = 5 v am12793v1 ic (a) 0.1 1 10 [v] 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.65 0.6 0.55 0.5 0.45 -55c 25c 125c 0.7
docid15387 rev 6 7/17 2n5154hr electrical characteristics 17 2.2 test circuit figure 7. resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor
radiation hardness assurance 2n5154hr 8/17 docid15387 rev 6 3 radiation hardness assurance the products guaranteed in radiation within the escc system fully comply with the escc 5201/002 and escc 22900 specifications. escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 6 ? delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c.
docid15387 rev 6 9/17 2n5154hr radiation hardness assurance 17 table 6. escc 5203/010 post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (i e = 0) v cb = 60 v 1 a i ebo emitter cut-off current (i c = 0) v eb = 5 v v eb = 6 v 1 1 a ma i ceo collector cut-off current (i b = 0) v ce = 40 v 50 a v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 100 ma 80 v v ce(sat) (1) collector-emitter saturation voltage i c = 5 a i b = 0.5 a i c = 2.5 a i b = 250 ma 1.5 1.45 v v v be(sat) (1) base-emitter saturation voltage i c = 2.5 a i b = 0.25 a i c = 5 a i b = 0.5 a 1.45 2.2 v v [h fe ] (1) post irradiation gain calculation (2) 2. the post-irradiation gain calculation of [h fe ], made using h fe measurements from prior to and on completion of irradiation testing and after each annealin g step if any, shall be as specified in milstd-750 method 1019. i c = 50 ma v ce = 5 v i c = 2.5 a v ce = 5 v i c = 5 a v ce = 5 v [25] [35] [20] [200]
package mechanical data 2n5154hr 10/17 docid15387 rev 6 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to-39 figure 8. to-39 drawing
docid15387 rev 6 11/17 2n5154hr package mechanical data 17 table 7. to-39 mechanical data dim. mm min. typ. max. a - 12.70 14.20 b0.400.49 c0.580.74 d6.006.40 e8.158.25 f9.109.20 g4.935.23 h0.850.95 i0.750.85 l 42 48
package mechanical data 2n5154hr 12/17 docid15387 rev 6 4.2 to-257 figure 9. to-257 mechanical drawing
docid15387 rev 6 13/17 2n5154hr package mechanical data 17 table 8. to-257 mechanical data dim. mm. min. typ max. a4.83 5.08 a1 0.89 1.14 a2 3.05 b0.64 1.02 b1 0.64 0.76 0.89 d 16.38 16.89 d1 10.41 10.92 d2 0.97 e2.54 e 10.41 10.67 l 12.70 19.05 l1 13.39 13.64 p3.56 3.81
package mechanical data 2n5154hr 14/17 docid15387 rev 6 4.3 smd.5 figure 10. smd.5 drawing table 9. smd.5 mechanical data dim. mm min. typ. max. a 2.84 3.00 3.15 a1 0.25 0.38 0.51 b 7.13 7.26 7.39 b1 5.58 5.72 5.84 b2 2.28 2.41 2.54 2.92 3.05 3.18 d 10.03 10.16 10.28 d1 0.76 e 7.39 7.52 7.64 e1.91
2n5154hr ordering information docid15387 rev 6 15/17 5 ordering information contact st sales office for information about the specific conditions for: ? products in die form. ? other jans quality levels ? tape and reel packing table 10. order codes cpn agency specification eppl quality level radiation level package lead finish marking (1) packing j2n5154s1 - - engineering model jans - smd.5 gold j5154s1 strip pack 2n5154s1 - - engineering model escc emitter on pin 1 smd.5 gold 2n5154s1 strip pack 2n51541 - - engineering model escc - to-39 gold 2n51541 strip pack 2n5154esy1 - - engineering model escc - to-257 gold 2n5154esy1 + beo strip pack 2n5154rshrg 5203/010/06r yes escc emitter on pin 1 - 100 krad: escc ldr smd.5 gold 520301006r strip pack 2n5154shrg 5203/010/06 yes escc emitter on pin 1 smd.5 gold 520301006 strip pack 2n5154hrg 5203/010/01 - escc - to-39 gold 520301001 strip pack 2n5154hrt 5203/010/02 - escc - to-39 solder dip 520301002 strip pack 2n5154resyhrg 5203/010/04r - escc 100 krad: escc ldr to-257 gold 520301004r + beo strip pack 2n5154resyhrt 5203/010/05r - escc 100 krad: escc ldr to-257 solder dip 520301005r + beo strip pack 2n5154esyhrg 5203/010/04 - escc - to-257 gold 520301004 + beo strip pack 2n5154esyhrt 5203/010/05 - escc - to-257 solder dip 520301005 + beo strip pack 1. specific marking only. the full marking includes in addition: for the engineering models: st logo, date code; country of origin (fr). for escc flight parts: st logo, date code, country of origin (fr), esa logo, serial number of the part within the assembly lot. for jans flight parts: st logo, date code, country of origin (fr), manufacturer code (cstm), serial number of the part within t he assembly lot.
revision history 2n5154hr 16/17 docid15387 rev 6 6 revision history . table 11. document revision history date revision changes 08-jan-2009 1 initial release 08-jan-2010 2 modified table 1: device summary 22-jul-2011 3 updated marking for the order code 2n5154esyhrb in table 1: device summary 12-sep-2012 4 added: section 2.1: electrical characteristics (curves) on page 5 29-jan-2014 5 added section 3: radiation hardness assurance and section 5: ordering information updated table 1: device summary . 08-apr-2014 6 updated table 1: device summary and table 10: order codes . updated section 4: package mechanical data . added figure 2.: safe operating area . minor text changes.
docid15387 rev 6 17/17 2n5154hr 17 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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