v ds (v) = 600v @ 150c i d = 8a r ds ( on ) < 0.85 ? (v gs = 10v) 100% uis tested! 100% r g tested! symbol a otf8n50 v ds v gs 8* 5.6* i dm i ar e ar e as dv/dt 38.5 0.3 t j , t stg t l symbol a otf8n50 r ja 65 r cs -- r jc 3.25 * drain current limited by maximum junction temperature. maximum case-to-sink a 0.5 maximum junction-to-case 0.71 parameter AOT8N50 maximum junction-to-ambient a,d 65 8 5.6 30 30 c/w peak diode recovery dv/dt 5 v/ns maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c w w/ o c junction and storage temperature range derate above 25 o c power dissipation b t c =25c c/w thermal characteristics units c/w p d c -50 to 150 drain-source voltage 500 absolute maximum ratings t a =25c unless otherwise noted AOT8N50 continuous drain current units parameter t c =25c t c =100c v v a i d gate-source voltage single pulsed avalanche energy g 307 pulsed drain current c 154 avalanche current c, g 3.2 repetitive avalanche energy c, g 1.4 a mj mj 176 features AOT8N50/aotf8n50 500v, 8a n-channel mosfet the AOT8N50 & aotf8n50 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. general description top view t o-220 f t o-220 g d s g d s g d s alpha & omega semiconductor, ltd. www.aosmd.com
AOT8N50/aotf8n50 symbol min typ max units 500 v 600 v bv dss / ? t j 0.56 v/ o c 1 10 i gss 100 na v gs(th) 3.4 4 4.6 v r ds(on) 0.63 0.85 ? g fs 10 s v sd 0.73 1 v i s 8a i sm 30 a c iss 694 868 1042 pf c oss 74 93 112 pf c rss 6.2 7.8 9.4 pf r g 2 4 6.0 ? q g 23.6 28.3 nc q gs 5.2 6.2 nc q gd 10.6 12.7 nc t d(on) 19.5 323 ns t r 47 56.4 ns t d(off) 51.5 62.0 ns t f 38.5 46.0 ns t rr 206 247.0 ns q rr 2.14 2.6 c rev 3. dec-08 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a,di/dt=100a/ s,v ds =100v maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =250v, i d =8a, r g =25 ? total gate charge v gs =10v, v ds =400v, i d =8a gate source charge gate drain charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250a, v gs =0v, t j =25c v gs =10v, i d =4a reverse transfer capacitance i f =8a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i dss a static drain-source on-resistance forward transconductance v ds =0v, v gs =30v zero gate voltage drain current gate-body leakage current body diode reverse recovery time diode forward voltage i s =1a, v gs =0v v ds =40v, i d =4a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =150c maximum body-diode pulsed current v ds =400v, t j =125c breakdown voltage temperature coefficient i d =250a, v gs =0v gate threshold voltage v ds =v gs , i d =250 a v ds =500v, v gs =0v a . the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.2a, v dd =50v, r g =25 ? , starting t j =25c alpha & omega semiconductor, ltd. www.aosmd.com
AOT8N50/aotf8n50 typical electrical and thermal characteristic s 200 16 0.1 1 10 100 246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 12 14 16 18 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =4a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) 25c 125c v d s =40v v gs =10v 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v alpha & omega semiconductor, ltd. www.aosmd.com
AOT8N50/aotf8n50 typical electrical and thermal characteristic s 200 16 0 3 6 9 12 15 0 5 10 15 20 25 30 35 q g (nc) figure 7: gate-charge characteristics v gs (volts) 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =400v i d =8a 0 2 4 6 8 10 0 25 50 75 100 125 150 t case (c) figure 11: current de-rating (note b) current rating i d (a) 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for AOT8N50 (note f) 10 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for aotf8n50 (note f) 10 alpha & omega semiconductor, ltd. www.aosmd.com
AOT8N50/aotf8n50 typical electrical and thermal characteristic s 200 16 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 12: normalized maximum transient thermal impedance for AOT8N50 (note f) z jc normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =0.71c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 13: normalized maximum transient thermal impedance for aotf8n50 (note f) z jc normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z jc .r jc r jc =3.25c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AOT8N50/aotf8n50 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms tt r d(on) t on t d(off ) t f t of f vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com
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