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irsm808-105mh 1 www.irf.com ? 2013 international rectifier september 6, 2013 10a, 500v description irsm808105mh is a 10a, 500v halfbridge module des igned for advanced appliance motor drive applicatio ns such as energy efficient fans and pumps. ir's technology of fers an extremely compact, high performance halfbr idge topology in an isolated package. this advanced ipm offers a com bination of ir's low r ds(on) trench fredfet technology and the industry benchmark halfbridge high voltage, rugged driver in a small pqfn package. at only 8x9mm and featuring integrated bootstrap functionality, the compact foo tprint of this surfacemount package makes it suita ble for applications that are spaceconstrained. irsm808105mh functions without a heat sink. features ? integrated gate drivers and bootstrap functionalit y ? suitable for sinusoidal modulation applications ? low r ds(on) trench fredfet ? undervoltage lockout for both channels ? matched propagation delay for all channels ? optimized dv/dt for loss and emi trade offs ? 3.3v input logic compatible ? active high hin and active low lin ? motor power range 80200w ? isolation 1500v rms min ? rohs compliant internal electrical schematic 600v half bridge driver with built in bootstrap v+ vs v vb vcc com dt lin hin irsm808105mh ordering information orderable part number package type form quantity irsm808105mh pqfn 8x9mm tray 1300 irsm808105mhtr pqfn 8x9mm tape and reel 2000 half-bridge ipm for small appliance motor drive applications irsm808 - 105mh
irsm808-105mh 2 www.irf.com ? 2013 international rectifier september 6, 2013 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. these are not tested at manufacturing. all voltage parameter s are absolute voltages referenced to v ss unless otherwise stated in the table. the thermal resistance rating is measured under board mounted and still air cond itions. symbol description min max unit bv dss mosfet blocking voltage 500 v i o output dc current per mosfet @ t c =25c 10 a p d power dissipation per mosfet @ t c =100c w t j (mosfet & ic) maximum operating junction temperatu re 150 c t l lead temperature (soldering 30 seconds) 260 c t s storage temperature range 40 150 c v b high side floating supply voltage 0.3 vs + 20 v v s high side floating supply offset voltage vb 20 vb +0.3 v v cc low side fixed supply voltage 0.3 20 v v in logic input voltage lin, hin 0.3 vcc+0.3 v v iso isolation voltage (1min) (note2) 1500 v rms note1: calculated based on maximum junction tempera ture. bond wires current limit is 3.5a. note2: char acterized, non tested at manufacturing reccomended operating conditions symbol description min typ max units conditions v + positive dc bus input voltage 400 v v s1,2,3 high side floating supply offset voltage (note 3) 400 v v b1,2,3 high side floating supply voltage v s +12 v s +20 v v cc low side and logic supply voltage 13.5 16.5 v v in logic input voltage com v cc v f p pwm carrier frequency 20 khz for proper operation the module should be used with in the recommended conditions. all voltages are abs olute referenced to com. the v s offset is tested with all supplies biased at 15v di fferential. note 3: logic operational for v s from com8v to com+500v. logic state held for v s from com8v to comv bs .
irsm808-105mh 3 www.irf.com ? 2013 international rectifier september 6, 2013 static electrical characteristics v bias (v cc , v bs )=15v, t j =25oc, unless otherwise specified. the v in , and i in parameters are referenced to com symbol description min typ max units conditions bv dss draintosource breakdown voltage 500 v t j =25c, i lk =3ma i lkh leakage current of high side fets in parallel 15 a t j =25c, v ds =500v i lkl leakage current of low side fets in parallel plus gate drive ic 20 a t j =25c, v ds =500v 0.58 0.8 t j =25c, v cc =10v, id = 6a r ds(on) drain to source on resistance 1.60 t j =150c, v cc =10v, id = 6a (note 4) v sd diode forward voltage 0.85 v t j =25c, v cc =10v, id = 6a v hin/lin logic 1 input voltage for hin & 0 for lin 2.2 v v hin/lin logic 0 input voltage for hin & 1 for lin 0.8 v v ccuv+, v bsuv+ v cc and v bs supply undervoltage, positive going threshold 8 8.9 9.8 v v ccuv, v bsuv v cc and v bs supply undervoltage, negative going threshold 7.4 8.2 9.0 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock out hysteresis 0.7 v i qbs quiescent v bs supply current v in =0v 45 70 a i qcc quiescent v cc supply current v in =0v 1100 1800 a i hin+ input bias current v in =4v 5 20 a i lin input bias current v in =0v 1 2 a r br internal bootstrap equivalent resistor value 200 t j =25c note 4: characterized, not tested at manufacturing mosfet avalanche characteristics symbol description min typ max units conditions eas single pulse avalanche energy 216 mj t j =25c, l=3mh, vdd=100v, ias=12a, to220 package. dynamic electrical characteristics v bias (v cc , v bs )=15v, tj=25oc, unless otherwise specified. driver only timing unless otherwise specified. symbol description min typ max units conditions t on input to output propagation turnon delay time 0.8 1.3 s i d =1ma, v + =50v t off input to output propagation turnoff delay time 0.8 1.3 s dt builtin deadtime 0.9 1.3 s gate driver; v lin =0 & v hin =5v with no external deadtime t fil,in input filter time (hin, lin) 300 ns
irsm808-105mh 4 www.irf.com ? 2013 international rectifier september 6, 2013 thermal and mechanical characteristics symbol description min typ max units conditions r th(jb) thermal resistance, junction to mounting pad, each mosfet 0.9 c/w standard reflowsolder process r th(ja) thermal resistance, junction to ambient, each mosfet tbd c/w input-output logic level table hin lin u,v,w hi hi v+ lo lo 0 hi lo ** lo hi * * v+ if motor current is flowing into vs, 0 if curr ent is flowing out of vs into the motor winding ** shoot-through condition
irsm808-105mh 5 www.irf.com ? 2013 international rectifier september 6, 2013 target qualification? qualification level industrial ?? (per jedec jesd 47) moisture sensitivity level msl3 ??? (per ipc/jedec jstd020) human body model class 1c (per jedec standard ansi/esda/jedec js001 ) esd machine model class a (per eia/jedec standard jesd22a115 ) rohs compliant yes ? qualification standards can be found at internation al rectifiers web site http://www.irf.com/ ?? higher qualification ratings may be available shoul d the user have such requirements. please contact your international rectifier sales representative f or further information. ??? higher msl ratings may be available for the specifi c package types listed here. please contact your international rectifier sales representative for fu rther information. module pin-out description pin name description 1, 4, 7, 32 com low side gate drive return 2 vcc 15v gate drive supply 3 hin logic input for high side (active high) 5 lin logic input for low side (active low) 6 dt dead time 8, 9, 10 v low side source connection 11 C 19 vs phase output 20 C 28 v+ dc bus 29 C 30 vs phase output (ve bootstrap cap connecti on) 31 vb high side floating supply (+ve bootstrap cap connection) exposed pad (pin 32) has to be connected to com for better electrical performance
irsm808-105mh 6 www.irf.com ? 2013 international rectifier september 6, 2013 package outline irsm808-105mh (bottom view), 1 of 2 dimensions in mm
irsm808-105mh 7 www.irf.com ? 2013 international rectifier september 6, 2013 package outline irsm808-105mh (bottom view), 2 of 2 dimensions in mm
irsm808-105mh 8 www.irf.com ? 2013 international rectifier september 6, 2013 package outline irsm808-105mh (top & side view) dimensions in mm
irsm808-105mh 9 www.irf.com ? 2013 international rectifier september 6, 2013 top marking irsm808105mh
irsm808-105mh 10 www.irf.com ? 2013 international rectifier september 6, 2013 typical application connection irs808-105mh figure 1: typical application connection 1. bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide a good decoupling between vc cvss abd vbvs terminals, the capaciotrs shown connected at these terminals should be located very close to the module pins. additional high frequenc y capacitors, typically 0.1uf, are recommended. 3. value of the bootstrap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dt044 or application n ote an1044.
irsm808-105mh 11 www.irf.com ? 2013 international rectifier september 6, 2013 figure 3a. input to output propagation turnon dela y time. figure 3b. input to output propagation turnoff del ay time. figure 3c. diode reverse recovery
irsm808-105mh 12 www.irf.com ? 2013 international rectifier september 6, 2013 data and specifications are subject to change witho ut notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 2527105 tac fax: (310) 2527903 visit us at www.irf.com for sales contact informati on

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