RU55200Q n-channel advanced power mosfet symbol rating unit v dss 55 v gss 25 t j 175 c t stg -55 to 175 c i s t c =25c 200 a i dp t c =25c 800 a t c =25c 200 t c =100c 142 t c =25c 326 t c =100c 163 r jc 0.46 c/w r ja 50 c/w e as 625 mj ruichips semiconductor co., ltd rev. a? jul., 2013 1 www.ruichips.com pin description features applications absolute maximum ratings to247 n-channel mosfet parameter common ratings (t c =25c unless otherwise noted) ? 55v/200a, r ds (on) =3.3m(typ.)@v gs =10v ? ultra low on-resistance ? fast switching and fully avalanche rated ? 100% avalanche tested ? 175c operating temperature ? lead free and green devices available (rohs compliant) ? high efficiency synchronous rectification in smps ? high speed power switching ? power supply drain-source voltage v gate-source voltage maximum junction temperature storage temperature range thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed diode continuous forward current 300s pulse drain current tested continuous drain current(v gs =10v) maximum power dissipation mounted on large heat sink i d a p d w thermal resistance-junction to ambient g d s g s d
RU55200Q min. typ. max. bv dss drain-source breakdown voltage 55 65 v 1 t j =125c 30 v gs(th) gate threshold voltage 2 3 4 v i gss gate leakage current 100 na r ds(on) drain-source on-state resistance 3.3 4 m v sd diode forward voltage 1.2 v t rr reverse recovery time 70 ns q rr reverse recovery charge 135 nc r g gate resistance 2 c iss input capacitance 6700 c oss output capacitance 1100 c rss reverse transfer capacitance 480 t d(on) turn-on delay time 40 t r turn-on rise time 23 t d(off) turn-off delay time 120 t f turn-off fall time 70 q g total gate charge 160 q gs gate-source charge 50 q gd gate-drain charge 47 notes: ruichips semiconductor co., ltd rev. a? jul., 2013 2 www.ruichips.com electrical characteristics (t c =25c unless otherwise noted) v dd =28v, i ds =40a, v gen =10v,r g =4.5 v ds =44v, v gs =10v, i ds =40a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. the package limitation current is 90a. limited by t jmax , i as =50a, v dd = 48v, r g = 50 , starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. gate charge characteristics nc ns i sd =40a, v gs =0v i sd =40a, dl sd /dt=100a/s v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =28v, frequency=1.0mhz pf dynamic characteristics v gs =25v, v ds =0v v gs =10v, i ds =40a diode characteristics v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU55200Q unit v gs =0v, i ds =250a i dss zero gate voltage drain current v ds =55v, v gs =0v a
RU55200Q device marking package packaging quantity reel size tape width RU55200Q RU55200Q to247 tube 30 - - ruichips semiconductor co., ltd rev. a? jul., 2013 3 www.ruichips.com ordering and marking information
RU55200Q ruichips semiconductor co., ltd rev. a? jul., 2013 4 www.ruichips.com typical characteristics 0 50 100 150 200 250 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v limited by package 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=40a 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 10000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.0001 0.001 0.01 0.1 1 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse single pulse r jc = 0.46 c/w
RU55200Q ruichips semiconductor co., ltd rev. a? jul., 2013 5 www.ruichips.com typical characteristics 0 40 80 120 160 200 240 280 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 3v 4v 8,9,10v 5v 0 1 2 3 4 5 0 40 80 120 160 200 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i ds =40a t j =25 c rds(on)=3.3m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =175 c 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=44v ids=40a
RU55200Q ruichips semiconductor co., ltd rev. a? jul., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU55200Q ruichips semiconductor co., ltd rev. a? jul., 2013 7 www.ruichips.com package information to247 ? h e1 c a1 a h e b b2 b1 l l1 l2 d c1 e2 min nom max min nom max a 4.850 5.000 5.150 0.191 0.197 0.203 a1 2.200 2.400 2.600 0.087 0.094 0.102 b 1.000 1.200 1.400 0.039 0.047 0.055 b1 2.800 3.000 3.200 0.110 0.118 0.126 b2 1.800 2.000 2.200 0.071 0.079 0.087 c 0.500 0.600 0.700 0.020 0.024 0.028 c1 1.900 2.000 2.100 0.075 0.079 0.083 d 15.450 15.600 15.750 0.608 0.614 0.620 e1 e2 l 40.900 41.100 41.300 1.610 1.618 1.626 l1 24.800 24.950 25.100 0.976 0.982 0.988 l2 20.300 20.450 20.600 0.799 0.805 0.811 7.10 7.20 7.30 0.280 0.283 0.287 e h h 0.000 0.150 0.300 0.000 0.006 0.012 0.235ref 5.980ref symbol mm inch 5.450typ 3.500ref 3.600ref 0.138ref 0.142ref 0.215typ
RU55200Q ruichips semiconductor co., ltd rev. a? jul., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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