inchange semiconductor product specification silicon npn power transistors MJ15022 mj15024 description ? with to-3 package ? complement to type mj15023; mj15025 ? excellent safe operating area ? high dc current gain h fe = 15 (min) @ i c = 8 adc applications ? designed for high power audio, disk head positioners and other linear applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit MJ15022 350 v cbo collector-base voltage mj15024 open emitter 400 v MJ15022 200 v ceo collector-emitter voltage mj15024 open base 250 v v ebo emitter-base voltage open collector 5 v i c collector current 16 a i cm collector current-peak 30 a i b base current 5 a p d total power dissipation t c =25 ?? 250 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.70 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors MJ15022 mj15024 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit MJ15022 200 v ceo(sus) collector-emitter sustaining voltage mj15024 i c =0.1a ;i b =0 250 v v cesat-1 collector-emitter saturation voltage i c =8a; i b =0.8a 1.4 v v cesat-2 collector-emitter saturation voltage i c =16a; i b =3.2a 4.0 v v be base-emitter on voltage i c =8a ; v ce =4v 2.2 v MJ15022 v ce =150v; i b =0 i ceo collector cut-off current mj15024 v ce =200v; i b =0 0.5 ma MJ15022 v ce =200v; v be(off) =1.5v i cex collector cut-off current mj15024 v ce =250v; v be(off) =1.5v 0.25 ma i ebo emitter cut-off current v eb =5v; i c =0 0.5 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 60 h fe-2 dc current gain i c =16a ; v ce =4v 5 i s/b second breakdown collector current with base forward biased v ce =50vdc,t=0.5 s, v ce =80vdc,t=0.5 s,nonrepetitive 5.0 2.0 a c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 500 pf f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 4 mhz
inchange semiconductor product specification 3 silicon npn power transistors MJ15022 mj15024 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
inchange semiconductor product specification 4 silicon npn power transistors MJ15022 mj15024
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