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hexfet power mosfet notes through are on page 9 pqfn 3.3mm x 3.3mm features and benefits applications features benefits ? control mosfet for buck converters v ds 30 v r ds(on) max (@v gs = 10v) 7.8 m q g (typical) 7.3 nc r g (typical) 0.5 i d (@t c(bottom) = 25c) 40 a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.5 0.02 27 max. 14 28 96 20 30 11 40 v w a c low charge (typical 7.3nc) lower switching losses low thermal resistance to pcb (<4.7c/w) enable better thermal dissipation 100% rg tested increased reliability low profile (<1.0mm) results in increased power density industry-standard pinout ? 1

!" form quantity irfhm831trpbf pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm831tr2pbf pqfn 3.3mm x 3.3mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 4.7 r jc (top) junction-to-case ??? 44 c/w r ja junction-to-ambient ??? 50 r ja (<10s) junction-to-ambient ??? 32 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . 0.0 . . 10. 1. 1. 1. . . 1.0 10 100 100 1 . 11 1 1. 0. . . .1 1 . .1 0. t d(on) turn-on delay time ??? 6.9 ??? t r rise time ??? 12 ??? t d(off) turn-off delay time ??? 6.2 ??? t f fall time ??? 4.7 ??? c iss input capacitance ??? 1050 ??? c oss output capacitance ??? 190 ??? c rss reverse transfer capacitance ??? 80 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 15 22 ns q rr reverse recovery charge ??? 16 24 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 25 a a 40 ??? ??? 96 ??? ??? na ns pf nc conditions see fig.15 max. 50 12 ? = 1.0mhz v ds = 15v ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 12a mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 12a v gs = 0v v ds = 25v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 12a t j = 25c, i f = 12a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 12a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 12a v gs = 4.5v typ. ??? r g =1.8 v ds = 15v, i d = 12a v ds = 24v, v gs = 0v, t j = 125c m a i d = 12a
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.8v vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.8v vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 150c 0 5 10 15 20 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 12a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd

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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a i d = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) limited by package 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 30 35 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 12a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.1a 6.4a bottom 12a
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 3.3x3.3 outline package details pqfn 3.3x3.3 part marking

http://www .irf.com/technical-info/appnotes/an-1 154.pdf international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier 3.3x3.3 pqfn part marking detail
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pqfn 3.3x3.3 tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape di mens i on des i gn to accommodat e the component wi dth dimens ion des ign to accommodate the component lenght dimens ion des ign to accommodate the component thicknes s pitch between s ucces s ive cavity centers over al l wi dth of the car r i er tape bo w p 1 ao ko di me ns ion (mm) cod e mi n max dimens i on (i nch) mi n max 3.50 3.70 .138 .146 1.10 1.30 7.90 8.10 .043 .051 11.80 12.20 .311 .319 12.30 12.50 .465 .480 .484 .492 3.50 3.70 .138 .146 de s cript i on w 1 qty 4000 r eel di ameter 13 i nches
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qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.69mh, r g = 50 , i as = 12a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.

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capability. msl1 (per jedec j-std-020d ??? ) rohs compliant moisture sensitivity level pqfn 3.3mm x 3.3mm ye s qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated package outline on page 7. ? updated tape and reel on page 8. ? updated data sheet based on corporate template. 6/5/2014 ? 1 101

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