dmn3010lfg document number: ds36195 rev. 6 - 2 1 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated n-channel enhancement mode mosfet powerdi ? product summary v (br)dss r ds(on) i d t c = +25c 30v 8.5m @ v gs = 10v 30a 10.5m @ v gs = 4.5v 25a description this new generation mosfet is designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power managemen t applications. applications ? backlighting ? dc-dc converters ? power management functions features ? low r ds(on) ? ensures on state losses are minimized ? small form factor thermally efficient package enab les higher density end products ? occupies just 33% of the board area occupied by so -8 enabling smaller end product ? 100% uis (avalanche) rated ? 100% rg tested ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y mechanical data ? case: powerdi3333-8 ? case material: molded plastic, ?green? molding com pound; ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.072 grams (approximate) ordering information (note 4) part number compliance case packaging dmn3010lfg-7 standard powerdi3333-8 2,000/tape & re el dmn3010lfg-13 standard powerdi3333-8 3,000/tape & r eel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http ://www.diodes.com/products/packages.html. marking information s s s g d d d d pin 1 g10 = product marking code yyww = date code marking yy = last digit of year (ex: 15 for 2015) ww = week code (01 ? 53) g10 yyww bottom view top view powerdi3333-8 d s g equivalent circuit powerdi3333 - 8
dmn3010lfg document number: ds36195 rev. 6 - 2 2 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 11 8.5 a t<10s t a = +25c t a = +70c i d 14 11 a continuous drain current (note 6) v gs = 10v steady state t c = +25c t c = +100c i d 30 20 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 90 a avalanche current (note 7) l = 0.1mh i a s 12.7 a avalanche energy (note 7) l = 0.1mh e a s 8.1 mj thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 0.9 w thermal resistance, junction to ambient (note 5) steady state r ja 137 c/w t < 10s 90 c/w total power dissipation (note 6) p d 2.4 w thermal resistance, junction to ambient (note 6) steady state r ja 52 c/w t < 10s 35 c/w total power dissipation (note 6) t c = +25c p d 26 w thermal resistance, junction to case (note 6) r j c 4.8 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 1 a v ds = 30v, v gs = 0v zero gate voltage drain current t j = +150c (note 9) ? ? 100 a gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1.0 ? 2.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 6.5 8.5 m v gs = 10v, i d = 18a ? 8 10.5 v gs = 4.5v, i d = 16a diode forward voltage v sd ? 0.75 1.0 v v gs = 0v, i s = 1a on state drain current (note 9) i d(on) 10 ? ? a v ds Q 5v, v gs = 4.5v dynamic characteristics (note 9 ) input capacitance c iss ? 2,075 4,150 pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 190 380 reverse transfer capacitance c rss ? 138 276 gate resistance r g ? 2.4 5 v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g ? 16.1 32 nc v ds = 15v, i d = 18a total gate charge (v gs = 10v) q g ? 37 74 gate-source charge q gs ? 6.1 12 gate-drain charge q gd ? 5.9 12 turn-on delay time t d(on) ? 4.5 10 ns v ds = 15v, v gs = 10v, r l = 0.83 , r gen = 3 , turn-on rise time t r ? 19.6 35 turn-off delay time t d(off) ? 31 50 turn-off fall time t f ? 10.7 21 reverse recovery time t rr ? 13.7 27 ns i f =15a, di/dt=500a/s reverse recovery charge q rr ? 18.3 37 nc notes: 5. device mounted on fr-4 substrate pc board , 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz c opper, with thermal vias to bottom layer 1-inch squ are copper plate. 7. uis in production with l = 1mh, tj = +25c. 8. short duration pulse test used to minimize self- heating effect. 9. guaranteed by design. not subject to production testing.
dmn3010lfg document number: ds36195 rev. 6 - 2 3 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 4.5v gs v = 3.5v gs v = 4.0v gs v = 5.0v gs v = 10.0v gs v = 2.8v gs v = 3.0v gs v = 2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 1 2 3 4 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j r , d r a i n - s o u r c e on-resistance (normalized) ds(on) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = v i = 10a gs d 10 v = v i = 5a gs d 4.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 -50 -25 0 25 50 75 100 125 150 v = v i = 10a gs d 10 v = v i = 5a gs d 5.0
dmn3010lfg document number: ds36195 rev. 6 - 2 4 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated t , ambient temperature ( c) figure 7 gate threshold variation vs. ambient temper ature a v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 5 10 15 20 25 30 c iss f = 1mhz c oss c rss q (nc) g , total gate charge figure 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) gs 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v = 15v i = a ds d 18 t1, pulse duration time (sec) figure 11 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 r (t) = r(t) * r r = 137c/w duty cycle, d = t1/t2 ja ja ja d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse
dmn3010lfg document number: ds36195 rev. 6 - 2 5 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. powerdi ? 3333 - 8 dim min max typ d 3.25 3.35 3.30 e 3.25 3.35 3.30 d2 2.22 2.32 2.27 e2 1.56 1.66 1.61 a 0.75 0.85 0.80 a1 0 0.05 0.02 a3 ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? 0.20 l 0.35 0.45 0.40 l1 ? ? 0.39 e ? ? 0.65 z ? ? 0.515 all dimensions in mm dimensions value (in mm) c 0.650 g 0.230 g1 0.420 y 3.700 y1 2.250 y2 1.850 y3 0.700 x 2.370 x2 0.420 a a1 a3 d d2 e e2 b2 (4x) l (4x) l1 (3x) b (8x) e z (4x) pin 1 id 1 4 8 5 x y y1 y3 y2 x2 c 1 4 8 5 g g1
dmn3010lfg document number: ds36195 rev. 6 - 2 6 of 6 www.diodes.com march 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorpo rated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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