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strong ir fet? irfr7740pbf irfu7740pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 hexfet ? power mosfet d s g application ?? brushed motor drive applications ?? bldc motor drive applications ?? battery powered circuits ?? half-bridge and full-bridge topologies ?? synchronous rectifier applications ?? resonant mode power supplies ?? or-ing and redundant power switches ?? dc/dc and ac/dc converters ?? dc/ac inverters benefits ?? improved gate, avalanche and dynamic dv/dt ruggedness ?? fully characterized capacitance and avalanche soa ?? enhanced body diode dv/dt and di/dt capability ?? lead-free, rohs compliant v dss 75v r ds(on) typ. 6.0m ?? max 7.2m ?? i d 87a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature d-pak irfr7740pbf i-pak irfu7740pbf g d s gate drain source d g s d g s base part number package type standard pack orderable part number form quantity irfr7740pbf tube 75 irfr7740pbf tape and reel 2000 irfr7740trpbf irfu7740pbf i-pak tube 75 irfu7740pbf d-pak 0 5 10 15 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 52a t j = 25c t j = 125c 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a )
? irfr/u7740pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 87 a ? i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 62 i dm pulsed drain current ?? 330 p d @t c = 25c maximum power dissipation 140 w linear derating factor 0.95 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 160 units e as (thermally limited) single pulse avalanche energy ?? 242 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r t jc junction-to-case ?? ??? 1.05 c/w ? r t ja junction-to-ambient (pcb mount) ? ??? 50 r t ja junction-to-ambient ? ??? 110 symbol parameter max. mj ? static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ' v (br)dss / ' t j breakdown voltage temp. coefficient ??? 51 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 6.0 7.2 m : v gs = 10v, i d = 52a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 100a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =75 v, v gs = 0v ??? ??? 150 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 2.2 ??? : ??? 7.0 ??? v gs = 6.0v, i d = 26a ? notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 120h, r g = 50 : , i as = 52a, v gs =10v. ?? i sd d 52a, di/dt d 570a/s, v dd d v (br)dss , t j d 175c. ?? pulse width d 400s; duty cycle d 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r t is measured at t j approximately 90c. ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 : http://www.irf.com/technical- info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 : , i as = 22a, v gs =10v
? irfr/u7740pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 110 ??? ??? s v ds = 25v, i d = 52a q g total gate charge ??? 84 126 i d = 52a q gs gate-to-source charge ??? 20 ??? v ds = 38v q gd gate-to-drain charge ??? 26 ??? v gs = 10v ? q sync total gate charge sync. (qg ? qgd) ??? 58 ??? t d(on) turn-on delay time ??? 10 ??? ns v dd = 38v t r rise time ??? 36 ??? i d = 52a t d(off) turn-off delay time ??? 55 ??? r g = 2.7 : t f fall time ??? 30 ??? v gs = 10v ? c iss input capacitance ??? 4430 ??? pf ? v gs = 0v c oss output capacitance ??? 370 ??? v ds = 25v c rss reverse transfer capacitance ??? 230 ??? ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 340 ??? v gs = 0v, v ds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) ??? 440 ??? v gs = 0v, v ds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 87 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 330 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c,i s = 52a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? ??? 12 ??? v/ns t j = 175c,i s = 52a,v ds = 75v ? t rr reverse recovery time ??? 35 ??? ns t j = 25c v dd = 64v ??? 40 ??? t j = 125c i f = 52a, q rr reverse recovery charge ??? 45 ??? nc t j = 25c di/dt = 100a/s ??? ??? 61 ??? t j = 125c ? i rrm reverse recovery current ??? 2.3 ??? a t j = 25c ? nc ? d s g
? irfr/u7740pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 6. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 52a v gs = 10v fig 4. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width fig 3. typical output characteristics 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 7. typical capacitance vs. drain-to-source voltage fig 5. typical transfer characteristics 0 20 40 60 80 100 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 52a fig 8. typical gate charge vs. gate-to-source voltage
? irfr/u7740pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 10. maximum safe operating area -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 95 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 50 100 150 200 i d , drain current (a) 6.0 7.0 8.0 9.0 10.0 11.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v fig 11. drain-to-source breakdown voltage fig 13. typical on-resista nce vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy -10 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 e n e r g y ( j ) 0.1 1 10 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc
? irfr/u7740pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 52a fig 15. avalanche current vs. pulse width 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart = 25c (single pulse)
? irfr/u7740pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 20 i r r m ( a ) i f = 52a v r = 64v t j = 25c t j = 125c fig 17. threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 300 q r r ( n c ) i f = 52a v r = 64v t j = 25c t j = 125c fig 21. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 50 100 150 200 250 300 q r r ( n c ) i f = 35a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 4 8 12 16 i r r m ( a ) i f = 35a v r = 64v t j = 25c t j = 125c -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a
? irfr/u7740pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ?
? irfr/u7740pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) d-pak (to-252aa) part marking information international assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 this is an irfr120 with assembly indicates "lead-free" product (optional) p = designates lead-free a = assembly site code part number week 16 date code year 1 = 2001 rectifier international logo lot code assembly 3412 irfr120 116a line a 34 rectifier logo irfr120 12 assembly lot code year 1 = 2001 date code part number week 16 "p" in assembly line position indicates "lead-free" qualification to the consumer-level p = designates lead-free product qualified to the consumer level (optional)
? irfr/u7740pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 i-pak (to-251aa) package outline (dimensions are shown in millimeters (inches)) i-pak (to-251aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 78 line a logo international rectifier or product (optional) p = designates lead-free a = assembly site code irfu120 part number week 19 date code year 1 = 2001 rectifier international logo assembly lot code irfu120 56 date code part number lot code assembly 56 78 year 1 = 2001 week 19 119a indicates lead-free" assembled on ww 19, 2001 in the assembly line "a" note: "p" in assembly line position example: with assembly this is an irfu120 lot code 5678
? irfr/u7740pbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches))
? irfr/u7740pbf 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 5, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level d-pak i-pak rohs compliant yes msl1 revision history date comment 11/5/2014 ?? updated e as (l =1mh) = 242mj on page 2 ?? updated note 9 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 22a, v gs =10v? on page 2

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