absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 55* i d @ v gs = 10v, t c = 100c continuous drain current 40 i dm pulsed drain current 220 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 480 mj i ar avalanche current 55 a e ar repetitive avalanche energy 15 mj dv/dt peak d iode recovery dv/dt 4.5 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300(for 5 seconds) weight 2.6 (t ypical) g hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on-state resistance combined with high transconductance. hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. c a power mosfet surface mount (smd-1) www.irf.com 1 smd-1 product summary part number r ds(on) i d IRFN054 0.020 ? 55a* features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating surface mount light-weight for footnotes refer to the last page IRFN054 60v, n-channel hexfet ? mosfet technology *current is limited by package pd-91543c
IRFN054 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.68 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.020 v gs = 10v, i d = 40a resistance ? ? 0.031 v gs = 10v, i d = 55a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 20 ? ? s v ds > 15v, i ds = 40a i dss zero gate voltage drain current ? ? 25 v ds = 48v ,v gs =0v ? ? 250 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 160 v gs =10v, i d = 55a q gs gate-to-source charge ? ? 48 nc v ds = 30v q gd gate-to-drain (?miller?) charge ? ? 67 t d (on) turn-on delay time ? ? 33 v dd = 30v, i d = 55a, t r rise time ? ? 180 v gs =10v, r g = 2.35 ? t d (off) turn-off delay time ? ? 100 t f fall time ? ? 100 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 4265 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1746 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 493 ? na nh ns a note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 0.83 c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 55* i sm pulse source current (body diode) ? ? 220 v sd diode forward voltage ? ? 2.5 v t j = 25c, i s = 55a, v gs = 0v t rr reverse recovery time ? ? 280 ns t j = 25c, i f = 55a, di/dt 100a/ s q rr reverse recovery charge ? ? 2.2 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a ? *current is limited by package measured from the center of drain pad to center of source pad.
www.irf.com 3 IRFN054 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics i d = 55a
IRFN054 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 8000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 160 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v v ds = 12v i d = 55a for test circuit see figure 13
www.irf.com 5 IRFN054 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFN054 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circui t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . peak i l = 55a v dd = 25v 10 v gs
www.irf.com 7 IRFN054 i sd 55a, di/dt 200a/ s, v dd 60v, t j 150c pulse width 300 s; duty cycle 2% repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.3mh peak i l = 55a, v gs = 10v footnotes: case outline and dimensions ? smd-1
ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2010
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