fdp8443 _f085 n-channel powertrench ? mosfet ? 200 9 fairchild semiconductor corporation fdp8443 _f085 rev. a www.fairchildsemi.com 1 fdp8443 _f085 n-channel powertrench ? mosfet 40v, 80a, 3.5 m features ? typ r ds(on) = 2.7m at v gs = 10v, i d = 80a ? typ q g(10) = 142nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter / alternator ? distributed power architecture and vrms ? primary switch for 12v systems march 2009
www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (t c < 144 o c, v gs = 10v) 80 a continuous (t amb = 25 o c, v gs = 10v, with r ja = 62 o c/w) 20 pulsed see figure 4 e as single pulse avalanche energy (note 1) 531 mj p d power dissipation 188 w derate above 25 o c1.25w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance junction to case 0.8 o c/w r ja thermal resistance junction to ambient (note 2) 62 o c/w package marking and ordering information device marking device package reel size tape width quantity electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v, - - 1 a v gs = 0v t c = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.84v r ds(on) drain to source on resistance i d = 80a, v gs = 10v - 2.7 3.5 m i d = 80a, v gs = 10v, t j = 175 o c -4.76.1 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 9310 - pf c oss output capacitance - 800 - pf c rss reverse transfer capacitance - 510 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 0.9 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 35a i g = 1ma - 142 185 nc q g(th) threshold gate charge v gs = 0 to 2v - 17.5 23 nc q gs gate to source gate charge -36-nc q gs2 gate charge threshold to plateau - 18.8 - nc q gd gate to drain ?miller? charge - 32 - nc fdp8443 _f085 n-channel powertrench ? mosfet fdp8443 _f085 rev. a fdp8443 fdp8443 _f085 n/a 50 units to-220ab tube
www.fairchildsemi.com 3 electrical characteristics t c = 25 o c unless otherwise noted switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 0.26mh, i as = 64a. 2: pulse width = 100s. symbol parameter test conditions min typ max units t on turn-on time v dd = 20v, i d = 35a v gs = 10v, r gs = 2 - - 58 ns t d(on) turn-on delay time - 18.4 - ns t r rise time - 17.9 - ns t d(off) turn-off delay time - 55 - ns t f fall time - 13.5 - ns t off turn-off time - - 109 ns v sd source to drain diode voltage i sd = 35a - 0.8 1.25 v i sd = 15a - 0.8 1.0 t rr reverse recovery time i sd = 35a, di sd /dt = 100a/ s -4255ns q rr reverse recovery charge - 48 62 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification. fdp8443 _f085 rev. a fdp8443 _f085 n-channel powertrench ? mosfet
www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) 25 50 75 100 125 150 175 0 40 80 120 160 200 current limited by package v gs = 10v t c , case temperature ( o c ) i d , drain current (a) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) 5000 t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows: fdp8443 _f085 rev. a fdp8443 _f085 n-channel powertrench ? mosfet
www.fairchildsemi.com 5 figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. transfer characteristics figure 8. saturation characteristics figure 9. drain to source on-res i stance variation vs gate to source voltage figure 10. normalized drain to source on resistance vs junction temperature typical characteristics 110100 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 0.01 0.1 1 10 100 1000 1 10 100 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) 500 t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) 012345 0 40 80 120 160 200 v gs = 5v i d , drain current (a) v ds , drain to source voltage (v) v gs = 4v v gs = 4.5v v gs = 10v pulse duration = 80 s duty cycle = 0.5% max 345678910 0 20 40 60 80 r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage ( v ) i d = 80a t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) fdp8443 _f085 rev. a fdp8443 _f085 n-channel powertrench ? mosfet
www.fairchildsemi.com 6 figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge vs gate to source voltage typical characteristics -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 a normalized gate threshold voltage t j , junction temperature ( o c ) -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 1.15 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c ) 0.1 1 10 100 1000 10000 20000 f = 1mhz v gs = 0v c rss c oss c iss v ds , drain to source voltage ( v ) capacitance (pf) 50 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 i d = 35a v dd = 25v v dd = 20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 15v fdp8443 _f085 rev. a fdp8443 _f085 n-channel powertrench ? mosfet
rev. i38 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specificati ons for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy . farichild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in t he industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fa ir child strongly encourages customers to purchase fa ir child parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fa irchild?s quality standards for handing and storage and provide access to fa ir child?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fa ir child is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 7 www.fairchildsemi.com fd p 8443 _f085 rev. a fdp8443 _f085 n-channel powertrench ? 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