dm n10h170sk3 document number: ds 35734 rev. 4 1 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product 100v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t c = + 25 c 100v 1 4 0 m ? @ v gs = 10v 12a 1 6 0 m ? @ v gs = 4.5v 11a description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? dc- dc converters ? power management functions ? analog switch features ? low on - resistance ? low input capacitance ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? dev ice (note 3) ? qualified to aec - q101 standards for high r eli ability mechanical data ? case: to25 2 (dpak) ? case m aterial: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? termi nals: fi nis h ? matte tin annealed over copper leadframe. solderable per mi l - std - 202, method 208 ? weight: 0. 33 grams (approximate) ordering information (note 4 ) part number case packaging dmn 10 h170s k 3 - 13 to25 2 2 , 5 00/tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and a ntimo ny - free, "green" and le ad - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http?//www.diodes.com/products/packages.html . marking information internal schematic yyww n170sk logo part no. . year: ?11? = 2011 xth week: 01 ~ 53 g s d d top view top view to252
dm n10h170sk3 document number: ds 35734 rev. 4 2 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current (note 4 ) v gs = 10 v steady state t c = + 25c t c = + 10 0c i d 1 2 7.5 a maximum body diode forward current (note 4 ) i s 4 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 16 a avalanche current (note 5 ) i ar 5.3 a avalanche energy (note 5 ) e ar 20 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 4 ) t c = + 25c p d 42 w t c = + 10 0c 17 thermal resistance, junction to ambient (note 4 ) r ja 44 c/w thermal resistance, junction to case (note 4 ) r j c 3 operating and storage temperature range t j, t stg - 55 to +150 c notes: 4 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . 5 . uis in prod uctio n with l = 1 .43 mh, tj = + 25c . electrical characteristic s (@ t a = +25c, unless otherwise specified.) characteristic symbol min t yp max unit test condition off characteristics (note 6 ) drain - so urce breakdown voltage bv dss 100 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 100 v, v gs = 0v gate - source leakage i gss ? ? 1 00 n a v gs = 2 0 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 1.0 ? 3.0 v v ds = v gs , i d = 250 a static drain - so urc e on - resistance r ds (on) ? 99 14 0 m ? v gs = 10 v, i d = 5 a ? 104 1 6 0 v gs = 4.5 v, i d = 5 a diode forward voltage v sd ? 0.7 1. 0 v v gs = 0v, i s = 1 0 a dynamic characteristics (note 7 ) input capacitance c iss ? 1167 ? pf v ds = 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? 36 ? reverse transfer capacitance c rss ? 25 ? gate resistance r g ? 1.3 ? ? v ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4. 5 v ) q g ? 4.9 ? n c v ds = 80 v, i d = 12.8 a total gate charge ( v gs = 10 v ) q g ? 9.7 ? gate - source charge q gs ? 2.0 ? gate - drain charge q gd ? 2.0 ? turn - on delay time t d(on) ? 10.5 ? ns v dd = 50v, r g = 25 ? , i d = 12.8 a turn - on rise time t r ? 11.1 ? turn - off delay time t d(off) ? 42.6 ? turn - off fall time t f ? 12.8 ? body diode reverse recovery time t rr ? 30.3 ? ns v gs = 0 v, i s = 12 .8 a , di /d t = 100a/ s body diode reverse recovery charge q rr ? 35.2 ? n c v gs = 0 v, i s = 12 .8 a , di /d t = 100a/ s notes: 6 . short duration pulse test used to minimize self - heating effect 7 . guaranteed by design ; n ot subject to production testing
dm n10h170sk3 document number: ds 35734 rev. 4 3 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 v , drain-source voltage (v) fig.1 typical output characteristic ds i , d r ai n c u r r en t (a ) d 0 2 4 6 8 10 1 2 3 4 5 v , gate-source voltage gs fig.2 typical transfer characteristics i , d r a i n c u r r e n t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 1 2 3 4 5 6 7 8 9 10 r , d r ai n -s o u r c e o n -r e si st a n c e ( ) d s ( o n ) ? i , drain-source current d fig. 3 typical on-resistance vs. drain current and gate voltage v = 2.5v gs v = 4.5v gs v = 1.8v gs 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 2 4 6 8 10 i , drain current d fig. 4 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n -r e si st an c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j r , d r ai n -so u r c e o n - r esi s t an c e ( n o r m a l i z ed ) d s ( o n ) v = 5v i = 5a gs d v =v i = 10a gs d 10 0 0.05 0.10 0.15 0.20 0.25 0.30 v =v i = 10a gs d 10 v =v i = 10a gs d 5 - 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j r , d r a i n -so u r c e o n -r e si st an c e ( ) d s ( o n ) ?
dm n10h170sk3 document number: ds 35734 rev. 4 4 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j v , g a t e t h r e sh o l d vo l t ag e (v) g s ( t h ) i = 250a d 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig.8 diode forward voltage vs. current i , so u r c e c u r r e n t (v) s t = 25c a 0 10 20 30 40 50 60 70 80 90 100 v , drain-source voltage (v) ds fig. 9 typical drain-source leakage current vs. voltage 1 10 100 1,000 10,000 i , d r ai n l e akag e c u r r en t (n a) d s s t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0 10 20 30 40 c , j u n c t i o n c ap ac i t an c e ( p f ) t v , drain-source voltage (v) ds fig. 10 typical junction capacitance c iss c oss c rss f = 1mhz 0 2 4 6 8 10 q (nc) g , total gate charge fig. 11 gate charge 0 2 4 6 8 10 v g a t e t h r esh o l d vo l t ag e (v) g s v = 80v i= a ds d 12.8
dm n10h170sk3 document number: ds 35734 rev. 4 5 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest v ersi o n. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. to252 dim min max t yp a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 2.286 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) z 11.6 x1 1.5 x2 7.0 y1 2.5 y2 7.0 c 6.9 e1 2.3 b3 e 2x b2 d l4 a c2 e a1 l l3 3x b a h a2 e1 x2 c z x1 y1 e1 y2
dm n10h170sk3 document number: ds 35734 rev. 4 6 of 6 www.diodes.com may 2013 ? diodes incorporated dm n10h170sk3 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life s upport devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or t o affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be p rovided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyr ight ? 201 3 , diodes incorporated www.diodes.com
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