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CHA2066-QAG rohs compliant ref. dscha2066qag6332 - 28 nov 06 1/12 specificatio ns subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 10-16ghz low noise amplifier gaas monolithic microwave ic in smd leadless packag e description the CHA2066-QAG is a two-stage wide band monolithic low noise amplifier. typical applications range from telecommunication (point to point, point to multi-point, vsat) to ism and military markets. the circuit is manufactured with a standard phemt process 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in lead-free smd package. main features broadband performance 10-16ghz 2.5db noise figure, 10-16ghz (bd) 16db gain, 1.5db gain flatness low dc power consumption 20dbm 3 rd order intercept point (be) 16l-qfn3x3 smd package (bd & be refer to biasing conditions) CHA2066-QAG ( low current ) 0 2 4 6 8 10 12 14 16 18 20 8 9 10 11 12 13 14 15 16 17 18 frequency ( ghz ) gain & nf ( db ) gain db nf main characteristics tamb = +25c symbol parameter min typ max unit nf noise figure, 10-16ghz (bd) 2.5 3.0 db g gain 14 16 db ip3 3rd order intercept point (be) 20 21 dbm esd protections: electrostatic discharge sensitive device observe handling precautions!
CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 2/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics (bd: low current biasing ) tamb = +25c, vd = +4v symbol parameter min typ max unit fop operating frequency range 10 16 ghz g gain 14 16 db d g gain flatness 1.5 2.0 db nf noise figure 2.5 3.0 db vswrin input vswr 2.0 :1 3.0:1 vswrout ouput vswr (11 to 16 ghz) 1.5:1 2.0:1 ip3 3rd order intercept point 17 18 dbm p1db output power at 1db gain compression 9.0 10 dbm id drain bias current 50 65 ma these values are representative of onboard measurem ents based on the propose characterization board. absolute maximum ratings (1) tamb = +25c symbol parameter (1) values unit vd drain bias voltage (2) 4.5 v pin maximum input power overdrive -3.0 dbm rth_bd thermal resistance channel to ground paddle (3) 155 c/w rth_be thermal resistance channel to ground paddle (3) 195 c/w top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage. (2) for a typical biasing circuit: b & d grounded . see chip biasing option page 9/12. (3) thermal resistance for tamb. = +85c and a tj m ax = +175c. 10-16ghz low noise amplifier CHA2066-QAG ref. : dscha2066qag6332 - 28 nov 06 3/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics (be: high current biasin g) tamb = +25c, vd = +4v symbol parameter min typ max unit fop operating frequency range 10 16 ghz g gain 14 16 db d g gain flatness 1.5 2.0 db nf noise figure 3.0 3.5 db vswrin input vswr 2.0 :1 3.0:1 vswrout ouput vswr (11 to 16 ghz) 1.5:1 2.0:1 ip3 3rd order intercept point 20 21 dbm p1db output power at 1db gain compression 13 14 dbm id drain bias current 70 80 ma these values are representative of onboard measurem ents based on the propose characterization board. CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 4/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical pcb measured performance bd: low noise & low consumption (t amb. 25c; b & d grounded) tamb = +25c, vd = +4v CHA2066-QAG ( low current ) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 6 8 10 12 14 16 18 20 22 frequency ( ghz ) sij ( db ) dbs11 dbs12 dbs21 dbs22 sij in the package access plans, using the proposed land patern & board. CHA2066-QAG ( low current ) 0 2 4 6 8 10 12 14 16 18 20 8 9 10 11 12 13 14 15 16 17 18 frequency ( ghz ) gain & nf ( db ) gain db nf gain & nf in the package, using the proposed land p atern & board. 10-16ghz low noise amplifier CHA2066-QAG ref. : dscha2066qag6332 - 28 nov 06 5/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parametres bd: low noise & low consumption (t amb. 25c; b & d grounded) tamb = +25c, vd = +4v freq (ghz) dbs11 ps11 dbs12 ps12 dbs21 ps21 dbs22 ps22 1.00 -0.07 -32.81 -63.73 155.32 -45.04 -130.29 0.22 -22.46 2.00 -0.45 -65.34 -65.72 131.09 -43.50 173.73 0.11 -46.01 3.00 -0.88 -98.76 -55.17 81.01 -28.86 -84.51 -0.49 -70.41 4.00 -1.40 -137.64 -53.89 101.44 -9.03 -127.43 -1.6 2 -88.42 5.00 -2.92 174.92 -50.86 67.72 2.29 170.98 -1.91 -1 09.44 6.00 -5.26 114.65 -53.58 27.26 10.78 97.39 -3.20 -1 34.57 7.00 -8.21 49.08 -53.95 102.90 15.10 22.29 -4.84 -1 51.54 8.00 -9.01 -4.96 -42.49 83.25 16.93 -42.88 -6.12 -1 73.88 9.00 -8.96 -53.79 -38.52 49.24 17.85 -99.72 -7.71 1 58.77 10.00 -10.57 -99.92 -35.09 21.84 18.37 -151.89 -9.4 7 121.42 11.00 -14.43 -148.00 -32.70 -13.00 18.28 158.56 -12 .71 72.56 12.00 -20.81 138.33 -30.58 -49.54 17.51 113.02 -15. 50 19.69 13.00 -16.28 73.75 -31.37 -83.26 17.24 73.36 -20.34 -5.61 14.00 -12.25 24.06 -31.27 -109.01 16.52 33.07 -22.1 6 -29.50 15.00 -10.79 -4.78 -31.18 -131.65 15.85 -4.32 -29.2 7 -48.96 16.00 -10.41 -17.87 -30.83 -156.53 15.61 -40.93 -24 .00 71.70 17.00 -8.49 -27.44 -31.91 173.64 15.52 -80.78 -15.4 1 45.23 18.00 -7.23 -40.10 -31.20 172.53 14.85 -123.20 -10. 41 28.78 19.00 -5.15 -61.69 -29.59 153.69 13.57 -166.84 -7.1 3 2.09 20.00 -3.83 -87.40 -27.70 125.70 11.65 150.73 -5.57 -28.15 21.00 -3.66 -115.49 -27.45 94.93 9.04 111.11 -4.87 -54.30 22.00 -4.12 -138.34 -28.22 69.02 6.26 76.39 -4.61 - 75.71 23.00 -5.14 -158.51 -27.99 46.60 3.63 43.54 -4.03 - 94.54 26.00 -7.57 -165.83 -29.57 -22.04 -6.10 -54.04 -2.0 8 -141.15 27.00 -5.73 -166.05 -31.13 -34.87 -10.73 -78.74 -1. 64 -154.74 28.00 -3.48 -172.97 -31.61 -56.30 -15.64 -97.73 -1. 05 -166.34 29.00 -2.24 176.23 -33.44 -68.53 -20.49 -104.47 -0. 77 -176.68 30.00 -1.67 166.40 -34.06 -82.14 -24.09 -106.27 -0. 27 173.66 refer to the definition of the sij reference plans section below CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 6/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical pcb measured performance be: low noise & high consumption (t amb. 25c; b & e grounded) tamb = +25c, vd = +4v CHA2066-QAG ( high current ) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 6 8 10 12 14 16 18 20 22 frequency ( ghz ) sij ( db ) dbs11 dbs12 dbs21 dbs22 sij in the package access plans, using the proposed land patern & board CHA2066-QAG ( low & high current ) 0 2 4 6 8 10 12 14 16 18 20 22 24 7 8 9 10 11 12 13 14 15 16 17 18 frequency ( ghz ) p -1db & oip3 ( dbm ) pout -1db bd oip3 bd pout -1db be oip3 be pout C1db & oip3 in the package, using the proposed land patern & board 10-16ghz low noise amplifier CHA2066-QAG ref. : dscha2066qag6332 - 28 nov 06 7/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parametres be: low noise & high consumption (t amb. 25c; b & e grounded) tamb = +25c, vd = +4v freq dbs11 ps11 dbs12 ps12 dbs21 ps21 dbs22 ps22 1.00 -0.06 -32.83 -63.05 154.13 -43.95 -133.71 0.25 -22.35 2.00 -0.44 -65.39 -65.94 130.29 -43.95 170.25 0.13 -46.01 3.00 -0.87 -98.89 -55.38 78.54 -27.08 -76.01 -0.53 -70.57 4.00 -1.38 -137.90 -54.31 104.66 -8.50 -128.93 -1.5 0 -87.59 5.00 -2.91 174.61 -50.63 69.94 2.61 170.88 -1.70 -1 09.15 6.00 -5.25 114.52 -52.37 30.30 11.16 98.22 -2.87 -1 34.71 7.00 -8.24 49.38 -52.51 86.03 15.55 23.53 -4.42 -15 2.27 8.00 -9.04 -4.12 -42.99 80.40 17.42 -41.65 -5.62 -1 76.16 9.00 -8.81 -53.24 -38.92 48.79 18.37 -98.51 -7.13 1 55.31 10.00 -10.18 -100.30 -35.31 22.90 18.91 -150.77 -8. 61 116.72 11.00 -13.62 -149.42 -32.83 -11.96 18.84 159.62 -11 .31 67.54 12.00 -19.18 138.59 -30.61 -48.80 18.07 113.90 -13. 46 17.22 13.00 -15.38 75.97 -31.34 -82.22 17.78 74.36 -17.32 -11.39 14.00 -11.68 24.19 -31.15 -108.12 17.02 34.08 -18.7 9 -38.57 15.00 -10.38 -7.42 -30.90 -131.51 16.30 -2.99 -23.2 3 -70.09 16.00 -10.21 -21.88 -30.60 -157.78 16.13 -38.98 -31 .30 81.59 17.00 -8.57 -33.43 -32.22 174.12 16.05 -78.76 -17.7 7 47.88 18.00 -7.68 -43.47 -31.34 173.10 15.52 -120.87 -11. 24 33.04 19.00 -5.40 -62.60 -29.57 155.96 14.35 -165.06 -7.3 4 5.05 20.00 -3.86 -87.55 -27.49 127.88 12.46 151.53 -5.55 -27.38 21.00 -3.60 -115.42 -26.98 96.14 9.77 111.34 -4.86 -54.73 22.00 -4.13 -138.36 -27.93 70.63 6.91 76.47 -4.66 - 76.49 23.00 -5.13 -158.10 -27.69 46.58 4.26 43.61 -4.09 - 95.03 24.00 -6.56 -169.57 -27.90 26.86 1.48 10.62 -3.57 - 111.80 25.00 -7.89 -172.95 -28.39 2.79 -1.62 -22.36 -2.65 -126.37 26.00 -7.56 -165.38 -29.21 -22.16 -5.55 -54.31 -2.1 0 -141.05 27.00 -5.73 -165.65 -30.78 -35.27 -10.18 -79.17 -1. 65 -154.66 28.00 -3.52 -172.96 -31.33 -57.32 -15.13 -98.50 -1. 05 -166.34 29.00 -2.28 176.11 -33.18 -69.14 -20.05 -105.53 -0. 78 -176.83 30.00 -1.74 165.52 -33.95 -83.12 -23.73 -107.10 -0. 28 173.49 refere to the definition of the sij reference plan s section below. CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 8/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 package outline matt tin, lead free (green) 1- nc 9- gnd units mm 2- gnd 10- rf out from the standard jedec mo-220 3- rf in 11- gnd 17- gnd 4- gnd 12- nc 5- nc 13- nc 6- b 14- vd 7- d 15- vg2 8- e 16- vg1 10-16ghz low noise amplifier CHA2066-QAG ref. : dscha2066qag6332 - 28 nov 06 9/12 specificat ions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 definition of the sij reference plans the reference plans are defined from the footprint of the recommended characterization board shown below under the number 95542. the reference is the symmetrical axis of the package. the input is and output reference plans are located at 2.65mm offset (input wise and output wise respec.) from this axis. then, the given sij incorporates this land patern. 2.65 2.65 circuit biasing options this circuit is self-biased, and flexibility is pro vided by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. - the two requirements are: n1: not exceed vds = 3.5volt (internal drain to s ource voltage). n2: not biased in such a way that vgs becomes posi tive. (internal gate to source voltage) - we propose two standard biasing: low noise and low consumption bd: vd = 4v, b and d grounded, and e not connected idd = 50ma & pout-1db = +10dbm typica low noise and high output power be: vd = 4v, b and e grounded idd = 70ma & pout-1db = +14dbm typical CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 10/12 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 application note the design of the motherboard has a strong impact o n the over all performance since the transition from the motherboard to the package is c omparably large. in case of the smd type packages of united monolithic semiconductors the mo therboard should be designed according to the information given in the following to achieve good performance. other configurations are also possible but can lead to di fferent results. if you need advise please contact united monolithic semiconductors for furthe r information. smd type packages of ums should allow design and fa brication of micro- and mm-wave modules at low cost. therefore, a suitable motherbo ard environment has been chosen. all tests and verifications have been performed on roge rs ro4003. this material exhibits a permittivity of 3.38 and has been used with a thick ness of 200m [8 mils] and a 1/2oz or less copper cladding. the corresponding 50ohm transmissi on line has a strip width of about 460m [approx. 18 mils]. the contact areas on the motherboard for the packag e connections should be designed according to the footprint given below. the proper via structure under the ground pad is very important in order to achieve a good rf and lifetim e performance. all tests have been done by using a grid of plated through vias with a diame ter of less than 300m [12 mils] and a spacing of less than 700m [28 mils] from the centr es of two adjacent vias. the via grid should cover the whole space under the ground pad a nd the vias closest to the rf ports should be located near the edge of the pad to allow a good rf ground connection. since the vias are important for heat transfer, a proper via filling should be guaranteed during the mounting procedure to get a low thermal resistance between package and heat sink. for power devices the use of heat slugs in the motherbo ard instead of a grid of vias is recommended. for the mounting process the smd type package can b e handled as a standard surface mount component. the use of either solder or conduc tive epoxy is possible. the solder thickness after reflow should be typical 50m [2 mi ls] and the lateral alignment between the package and the motherboard should be within 50m [ 2 mils]. caution should be taken to obtain a good and reliable contact over the whole p ad areas. voids or other improper connections, in particular, between the ground pads of motherboard and package will lead to a deterioration of the rf performance and the heat dissipation. the latter effect can reduce drastically reliability and lifetime of the product . 10-16ghz low noise amplifier CHA2066-QAG ref. : dscha2066qag6332 - 28 nov 06 11/12 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 (for production, design must be adapted with regard to pcb tolerances and assembly process) basic footprint for a 16l-qfn3x3 (all unit mm) (please, refer to the ums proposed footprint for op timum operation in the following proposed assembly board section) the rf ports are dc blocked on chip. the dc connect ion (vd) does not include any decoupling capacitor in package, therefore it is ma ndatory to provide a good external dc decoupling on the pc board, as close as possible to the package. smd mounting procedure the smd leadless package has been designed for high volume surface mount pcb assembly process. the dimensions and footprint requ ired for the pcb (motherboard) are given in the drawings above. for the mounting process standard techniques involv ing solder paste and a suitable reflow process can be used. for further details, see appli cation note an0017. CHA2066-QAG 10-16ghz low noise amplifier ref. : dscha2066qag6332 - 28 nov 06 12/12 specifica tions subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 proposed assembly board for the 16l-qfn3x3 products characterization. - compatible with the proposed footprint. - based on typically ro4003 / 8mils or equivalent. - using a microstrip to coplanar transition to access the package. - recommended for the implementation of this product on a module board. ordering information qfn 3x3 rohs compliant package : CHA2066-QAG/xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s. |
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