v20120c-e3, vf20120c-e3, VB20120C-E3, vi20120c-e3 www.vishay.com vishay general semiconductor revision: 11-sep-13 1 document number: 89040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.54 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab, ito-220ab, and to-262aa package) ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ab, ito-220ab, to-263ab and to-262aa ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum ? ? ? ? ? primary characteristics i f(av) 2 x 10 a v rrm 120 v i fsm 120 a v f at i f = 10 a 0.64 v t j max. 150 c package to-220ab, ito-220ab, to-263ab, to-262aa diode variation common cathode to-220ab 1 2 3 1 k 2 3 to-263ab 1 2 k to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 k heatsink pin 1 pin 2 pin 3 pin 1 pin 2 case pin 3 v20120c vf20120c vi20120c vb20120c tmbs ? ito-220ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v20120c vf20120c vb20120c vi20120c unit maximum repetitive peak reverse voltage v rrm 120 v maximum average forward rectified current (fig. 1) per device i f(av) 20 a per diode 10 peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 120 a non-repetitive avalanche energy at t j = 25 c, l = 60 mh per diode e as 80 mj peak repetitive reverse current at t p = 2 s, 1 khz, ? t j = 38 c 2 c per diode i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s isolation voltage (ito-220ab only) fr om terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg -40 to +150 c
v20120c-e3, vf20120c-e3, VB20120C-E3, vi20120c-e3 www.vishay.com vishay general semiconductor revision: 11-sep-13 2 document number: 89040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 120 (minimum) - v instantaneous forward voltage ? per diode i f = 5 a t a = 25 c v f (1) 0.62 - v i f = 10 a 0.81 0.90 i f = 5 a t a = 125 c 0.54 - i f = 10 a 0.64 0.72 reverse current per diode v r = 90 v t a = 25 c i r (2) 8-a t a = 125 c 6-ma v r = 120 v t a = 25 c - 700 a t a = 125 c 14 45 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v20120c vf20120c vb20120c vi20120c unit typical thermal resistance per diode r ? jc 2.8 5.0 2.8 2.8 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab v20120c-e3/4w 1.88 4w 50/tube tube ito-220ab vf20120c-e3/4w 1.75 4w 50/tube tube to-263ab VB20120C-E3/4w 1.37 4w 50/tube tube to-263ab VB20120C-E3/8w 1.37 8w 800/reel tape and reel to-262aa vi20120c-e3/4w 1.45 4w 50/tube tube case temperat u re (c) a v erage for w ard rectified c u rrent (a) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 v f20120c v (b,i)20120c resisti v e or ind u cti v e load mo u nted on specific heatsink 0 2 4 6 8 10 0246 1012 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 8 d = t p /t t p t
v20120c-e3, vf20120c-e3, VB20120C-E3, vi20120c-e3 www.vishay.com vishay general semiconductor revision: 11-sep-13 3 document number: 89040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse charac teristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient thermal impedance per diode fig. 7 - typical transient thermal impedance per diode instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0 0.2 0.4 0. 8 1.2 1.6 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.6 1.0 1.4 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0.01 0.001 100 10 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 10 1000 10 000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 100 10 1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) j u nction to case v (b,i)20120c 10 1 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) v f20120c j u nction to case
v20120c-e3, vf20120c-e3, VB20120C-E3, vi20120c-e3 www.vishay.com vishay general semiconductor revision: 11-sep-13 4 document number: 89040 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) ? to-220ab 0.113 (2. 8 7) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15. 8 7) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.02 8 (0.70) 0.154 (3.91) 0.14 8 (3.74) 1 3 2 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) to-262aa heatsi n k pi n 2 pi n 1 pi n 3 0.401 (10.19) 0.3 8 1 (9.6 8 ) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.02 8 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) k to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.0 8 (2.032) mi n . 0.15 (3. 8 1) mi n . 0.33 ( 8 .3 8 ) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4. 8 3) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15. 8 5) 0.591 (15.00) 0.037 (0.940) 0.027 (0.6 8 6) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 ( 8 .13) 0.411 (10.45) 0.3 8 0 (9.65) 0.245 (6.22) mi n .
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