, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 SD4590 rf power transistors 800-960 mhz cellular base station gold metallization diffused emitter ballasting internal input/output matching common emitter configuration designed for linear operation high saturated power capability 26 volt, 900 mhz performance pout =150 wmin. gain = 8.5 dbmin. imd3 = -28db max. @ pout = 150w pep inherent ruggedness: load mismatch tolerance of 5:1 min.vswr 3 db overdrive capability m208 epoxy sealed order code SD4590 branding SD4590 description the SD4590 is designed for both analog and digital cellular base stations over the 800 to 960 mhz frequency range, specifically those systems requiring the high linearity and efficiency afforded by class ab operation. integrated input/output pre-matching simplifies amplifier design. ruggedness, mttf, and linearity are enhanced using diffused emitter resistors and refractory/gold metallization. absolute maximum ratings (tcase = 25 c) thermal data pin connection c 1. collector 2. emitter 3.base symbol vcbo vceo vebo ic pdiss t, tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage device current power dissipation max. operating junction temperature storage temperature value 65 28 3.5 25 300 200 -65 to 150 unit v v v a w c "c rth(j-c) junction-case thermal resistance 0 60 c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
SD4590 electrical specification (tcase = 25 c) static symbol bvcbo bvceo bvcer bvebo iceo iceo iebo iebo hpe parameter ic = 100 ma vbe = 0 v ic = 100 ma ib = 0 ma ic = 100 ma rbe = 80 il ic = 50 ma ic = 0 ma vce = 26 v vbe = 0 v vce = 10 v vbe = 0 v vbe = 1 v vce = 0 v vbe = 2.5v vce = 0 v vce = 5v lc = 6 a mm. 65 28 . 33 3.5 25 typ. 80 30 40 4.0 45 max. 10 0.5 0.1 3 120 unit v v v v ma ma ma ma tested per side ref 1016365e dynamic symbol cob parameter f = 1 mhz vcb = 26 v for information only - this part is collector matched min. typ. 75 max. unit pf dynamic (cw) symbol pin pout gp nc pldb ovd parameter f = 900 mhz vce = 26 v icq = 2x200 ma pout = 150 w f = 900 mhz vce = 26 v icq = 2x200 rna pin = 21 w f = 900 mhz vce = 26 v icq = 2x200 m a pout = 1 sow f = 900 mhz vce = 26 v icq = 2x200 m a pout = 150 w f = 900 mhz vce = 26 v icq = 2x200 ma f = 900 mhz vce = 26 v icq = 2x200 ma set pout = 150 w pep; increase pin 3db min. 150 8.5 50 150 typ. 175 9.5 55 160 max. 21 unit w w db % w no degratation in device performance dynamic (two-tone) symbol *gp *r|c *imd3 'load mismatch *ovd parameter vce = 26 v icq = 2x200 ma pout = 150 w pep vce = 26 v icq = 2x200 ma pout = 150 w pep vce = 26 v icq = 2x200 ma pout = 1 50 w pep vce = 26 v icq = 2x200 ma pout = 1 sow pep vswr = 5:1 min @ all phase angles vce = 26 v icq = 2x200 ma set pout = 150 w pep; increase p!n 3db min. 8.5 30 no c typ. 9.5 35 -32 jegratati perfor max. -28 on in de mance unit db % dbt vice no degratation in device performance noteif, = 900.00 mhz k =900.10 mhz
dim. a b c d e f g h 1 j k l m n nini min. 5.59 3.05 9.65 19.81 33.91 0.08 1.52 2.08 10.03 21.59 typ. 5.33 11.05 27.94 max. 5.64 3.30 9.91 20.83 34.16 0.18 1.78 2.54 5.21 10.34 22.10 inch min. .200 .120 .380 .780 1.335 .003 .060 .082 .395 .850 typ. .210 .435 1.100 max. .230 .130 .390 .820 1.345 .007 .070 .100 .205 .407 .870 fullr [4xj.060 r cm jl seahng plane
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