to ? 220f 1. base 2. collector 3. emitter to-220f plastic-encapsulate transistors KTB1367 transistor (pnp) features z low collector-emitter saturation voltage z general purpose applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -100 v collector-emitter breakdown voltage v (br)ceo * i c =-50ma,i b =0 -100 v emitter-base breakdown voltage v (br)ebo * i e =-10ma,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -100 a collector cut-off current i ceo v ce =-50v,i b =0 -500 a emitter cut-off current i ebo v eb =-5v,i c =0 -1 ma h fe(1) v ce =-5v, i c =-1a 40 240 dc current gain h fe(2) v ce =-5v, i c =-4a 20 collector-emitter saturation voltage v ce(sat) i c =-4a,i b =-0.4a -2 v base-emitter voltage v be v ce =-5v, i c =-4a -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 270 pf transition frequency f t v ce =-5v,i c =-1a 5 mhz *pulse test classification of h fe (1) rank r o y range 40-80 70-140 120-240 symbol parameter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -100 v v ebo emitter-base voltage -5 v i c collector current -5 a p c collector power dissipation 2 w r ja thermal resistance from junction to ambient 62.5 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2014
-0.1 -1 -10 10 100 1000 10000 -200 -400 -600 -800 -1000 -1200 -1e-4 -1e-3 -0.01 -0.1 -1 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 -1e-3 -0.01 -0.1 -1 -200 -400 -600 -800 -1000 -1200 -0.01 -0.1 -1 -10 -100 -1e-3 -0.01 -0.1 -1 -10 -100 -1000 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? -20 p c ?? t a t a = 1 0 0 t a = 2 5 collcetor current i c (a) base-emmiter voltage v be (mv) v be common emitter v ce =-5v collector power dissipation p c (mw) ambient temperature t a ( ) -5 base-emitter saturation voltage v besat (mv) collector current i c (a) =10 t a =100 t a =25 i c v besat ?? -5 -500 collector-emitter saturation voltage v cesat (mv) collector current i c (a) i c v cesat ?? t a =100 t a =25 =10 -5 dc current gain h fe collector current i c (a) common emitter v ce =-5v t a =25 t a =100 i c h fe ?? -5 KTB1367 -10ma -9ma -8ma -7ma -6ma -5ma -4ma -3ma -2ma i b =-1ma collector current i c (a) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2014
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