DMG6602SVT document number: ds35106 rev. 6 - 2 1 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) i d t a = 25c q1 30v 60m @ v gs = 10v 3.4a 100m @ v gs = 4.5v 2.7a q2 -30v 95m @ v gs = -10v -2.8a 140m @ v gs = -4.5v -2.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: tsot26 ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) ordering information (note 3) part number case packaging DMG6602SVT-7 tsot26 3000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm to tal br + cl) and <1000ppm antimony compounds. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 2017 code x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d tsot26 top view top view 1 2 3 6 5 4 d1 s1 d2 g1 s2 g2 n-channel p-channel d1 s1 g1 q1 d2 s2 g2 q2 66c = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) 66c ym
DMG6602SVT document number: ds35106 rev. 6 - 2 2 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information maximum ratings ? q1 @ta = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 3.4 2.7 a continuous drain current (note 5) v gs = 4.5v steady state t a = 25c t a = 70c i d 2.7 2.2 a maximum continuous body diode forward current (note 5) i s 1.5 a pulsed drain current (note 5) i dm 25 a maximum ratings ? q2 @ta = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t a = 25c t a = 70c i d -2.8 -2.4 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d -2.3 -2.1 a maximum continuous body diode forward current (note 5) i s -1.5 a pulsed drain current (note 5) i d -20 a thermal characteristics characteristic symbol value units total power dissipation (note 4) t a = 25c p d 0.84 w t a = 70c 0.52 thermal resistance, junction to ambient (note 4) steady state r ja 155 c/w t<10s 109 total power dissipation (note 5) t a = 25c p d 1.27 w t a = 70c 0.8 thermal resistance, junction to ambient (note 5) steady state r ja 102 c/w t<10s 71 thermal resistance, junction to case (note 5) r jc 34 operating and storage temperature range t j, t stg -55 to +150 c notes: 4. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 5. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate.
DMG6602SVT document number: ds35106 rev. 6 - 2 3 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information electrical character istics ? q1 nmos @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 250 a zero gate voltage drain current i dss - - 1.0 a v ds = 24v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 1.0 - 2.3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 38 55 60 100 m ? v gs = 10v, i d = 3.1a v gs = 4.5v, i d = 2a forward transfer admittance |y fs | - 4 - s v ds = 5v, i d = 3.1a diode forward voltage v sd - 0.8 1 v v gs = 0v, i s = 1a dynamic characteristics (note 7) input capacitance c iss - 290 400 pf v ds = 15v, v gs = 0v, f = 1.2mhz output capacitance c oss - 40 80 reverse transfer capacitance c rss - 40 80 gate resistance r g - 1.4 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g - 4 6 nc v ds = 15v, v gs = 4.5v, i d = 3.1a total gate charge (v gs = 10v) q g - 9 13 v ds = 15v, v gs = 10v, i d = 3a gate-source charge q g s - 1.2 - gate-drain charge q g d - 1.5 - turn-on delay time t d ( on ) - 3 - ns v gs = 10v, v ds = 15v, r g = 3 ? , r l = 4.7 ? turn-on rise time t r - 5 - turn-off delay time t d ( off ) - 13 - turn-off fall time t f - 3 - notes: 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 1 typical output characteristics ds i, d r ain c u r r en t (a) d 0.0 2.0 4.0 6.0 8.0 10.0 v , gate source voltage(v) fig. 2 typical transfer characteristics gs i, d r a in c u r r ent ( a ) d 0 2 4 6 8 10 012345 v = 5.0v ds
DMG6602SVT document number: ds35106 rev. 6 - 2 4 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d r ,d r ain-s o u r ce o n- r esistance( ) ds(on) 0.01 0.1 1 04 8 121620 r ( ) ave @ v =4.5v ds(on) g r ( ) ave @ v =10v ds(on) g i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) 0 0.04 0.08 0.12 0.16 02 4 6 810 v= 4.5v gs ave r ( ) @ 150c ds(on) ave r() @ -55c ds(on) ave r ( ) @ 25c ds(on) ave r ( ) @ 85c ds(on) ave r ( ) @ 125c ds(on) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , drain-source on-resistance ds(on) 0 0.02 0.04 0.06 0.08 0.1 0 0.4 0.8 1.6 1.2 2.4 -50 -25 0 25 50 75 100 125 150 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j i= 250a d i= 1ma d 2.0 i , source current (a) s 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 2 4 6 8 10 v(v) @ v=0v t= 25c sd ds a
DMG6602SVT document number: ds35106 rev. 6 - 2 5 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information f = 1mhz v , drain-source voltage (v) fig. 9 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e (p f ) t cave (pf) rss 10 100 1000 0 5 10 15 20 25 30 cave (pf) iss cave (pf) oss 0 2 4 6 8 10 0246810 v = 10v i= 3.0a ds d q( n c ) g , total gate charge fig. 10 gate charge v g a t e t h r es h o ld v o l t a g e (v) gs 0.1 1 10 100 v , drain-source voltage (v) fig. 11 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p= 10ms w p = 1ms w p = 100s w
DMG6602SVT document number: ds35106 rev. 6 - 2 6 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information electrical character istics ? q2 pmos @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current i dss - - -1.0 a v ds = -24v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -1.0 - -2.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 73 99 95 140 m ? v gs = -10v, i d = -2.7a v gs = -4.5v, i d = -2a forward transfer admittance |y fs | - 6 - s v ds = -5v, i d = -2.7a diode forward voltage v sd - -0.8 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 7) input capacitance c iss - 350 420 pf v ds = -15v, v gs = 0v, f = 1.2mhz output capacitance c oss - 50 100 reverse transfer capacitance c rss - 45 80 gate resistance r g - 17.1 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -4.5v) q g - 4 6 nc v ds = -15v, v gs = -4.5v, i d = -3a total gate charge (v gs = -10v) q g - 7 9 v ds = -15v, v gs = -10v, i d = -3a gate-source charge q g s - 0.9 - gate-drain charge q g d - 1.2 - turn-on delay time t d ( on ) - 4.8 - ns v gs = -10v, v ds = -15v, r g = 6 ? , r l = 15 ? turn-on rise time t r - 7.3 - turn-off delay time t d ( off ) - 20 - turn-off fall time t f - 13 - notes: 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , drain -source voltage(v) fig. 12 typical output characteristics ds 0.0 2.0 4.0 6.0 8.0 i , drain current d v , gate source voltage(v) fig. 13 typical transfer characteristics gs i, d r ai n c u r r e n t (a) d 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
DMG6602SVT document number: ds35106 rev. 6 - 2 7 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information i , drain source current fig. 14 typical on-resistance vs. drain current and gate voltage d r ,drain-source on-resistance( ) ds(on) 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 02 r ( ) ave @ v =2.5v ds(on) g r() ave @ v=4.5v ds(on) g r() ave @ v=10v ds(on) g 48 6 02468 i , drain source current (a) fig. 15 typical on-resistance vs. drain current and temperature d r , drain-s o urce o n-resistance( ) ds(on) v = 4.5v gs 0 0.04 0.08 0.12 0.16 0.2 ave r ( ) @ 150c ds(on) ave r() @ -55c ds(on) ave r ( ) @ 25c ds(on) ave r ( ) @ 85c ds(on) ave r ( ) @ 125c ds(on) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 16 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 17 on-resistance variation with temperature r , drain-source on-resistance ( ) ds(on) 0 0.04 0.08 0.12 0.16 0.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 18 gate threshold variation vs. ambient temperature 0 0.4 0.8 1.2 1.6 2 v , gate threshold voltage (v) gs(th) v , source -drain voltage (v) sd fig. 19 diode forward voltage vs. current i , source current (v) s 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4
DMG6602SVT document number: ds35106 rev. 6 - 2 8 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information -v , drain-source voltage (v) fig. 20 typical junction capacitance ds c , j u n c t i o n c apa c i t a n c e (p f ) t 10 100 1000 0 5 10 15 20 25 30 f = 1mhz c ave(pf) iss c ave(pf) oss c ave(pf) rss 0 2 4 6 8 10 024 6 810 v= -15 i=-3a ds d q( n c ) g , total gate charge fig. 21 gate charge -v g a t e t h r es h o ld v o l t a g e (v) gs 0.1 1 10 100 -v , drain-source voltage (v) fig. 22 soa, safe operation area ds 0.01 0.1 1 10 100 -i , d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c j(max) a v = -10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) fig. 23 transient thermal resistance r(t), transient thermal resistance d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 164c/w duty cycle, d = t1/ t2 ja ? ja ja
DMG6602SVT document number: ds35106 rev. 6 - 2 9 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information package outline dimensions suggested pad layout tsot26 dim min max typ a ? 1.00 ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? 2.90 e ? ? 2.80 e1 ? ? 1.60 b 0.30 0.45 ? c 0.12 0.20 ? e ? ? 0.95 e1 ? ? 1.90 l 0.30 0.50 l2 ? ? 0.25 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 y1 c c x (6x) y (6x) c a1 l e1 e a2 d e1 e 6x b 4x 1 l2 a
DMG6602SVT document number: ds35106 rev. 6 - 2 10 of 10 www.diodes.com may 2012 ? diodes incorporated DMG6602SVT advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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