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1a, 0.5v low input voltage, high speed ldo regulator XC6602 series general description the XC6602 series is a low voltage input (0.5v) operation and provides high accuracy 15mv/ 20mv and can supply large current efficiently due to its ultra low on-resistance even at low output voltages. the series is ideally suited to the applications which require hi gh current in low input/output voltages and consists of a nch driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (tsd) ci rcuit, an under voltage lock out (uvlo) circuit, a soft-start circuit and a phase compensation circuit. output voltage is selectable in 0.1v increments within a range of 0.5v to 1.8v using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (c l ). the inrush current (i rush ) from v in to v out for charging c l at start-up can be reduced and makes the v in stable. the soft-start time is optimized internally. the ce function enables the output to be turned off and the seri es to be put in stand-by mode resulting in greatly reduced power consumption. at the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (c l ) to be discharged via the internal switch. as a result the v out pin quickly returns to the v ss level. the ce pull-down function keeps the ic to be in stand-by mode even if the ce pin is left open. features maximum output current : 1a (1.3a limit) smart phones / mobile phones etr03045-006 applications digital still cameras / camcorders on resistance : 0.15? v bias =3.6v,v out =1.2v bias voltage range : 2.5v 6.0v input voltage range : 0.5v 3.0v output voltage range : 0.5v 1.8v (0.1v increments) note pc / tablet pc 1/31 e-book readers / electronic dictionaries wireless lan output voltage accuracy : 0.015v v out 1.2v 0.020v out R1.2v ripple rejection : 60db f=1khz (v bias_psrr ) 75db f=1khz(v in_psrr ) low power consumption : 100 a (v bias ), 6.5 a(v in ) v out =1.2v stand-by current : 0.01 a (v bias ), 0.01 a (v in ) under-voltage lockout 1.8v (v bias ), 0.4v (v in ) : thermal shutdown : 150 detect, 125 release protection circuit : fold-back current limit, tsd, uvlo function : built-in soft-start ce pull-down (active high) c l auto discharge operating ambient temperature : -40 +85 output capacitor : ceramic capacitor compatible (2.2 f) packages : usp-6c, sot-26w, sot-89-5,wlp-5-02 environmentally friendly : eu rohs compliant, pb free typical application circuit typical performance characteristics dropout voltage vs. output current XC6602x121mr-g 0 50 100 150 200 250 0 200 400 600 800 1000 output current: i out (ma) dropout voltage: vdif(mv) vbias=3.3v vbias=3.6v vbias=5.0v v ce =v bias , c bias =c in =1.0f, c l =2.2 f ta=25
2/31 XC6602 series pin configuration *the dissipation pad for the usp-6c package should be solder-plat ed in recommended mount pattern and metal masking so as to enh ance mounting strength and heat release. if the pad needs to be connected to other pins, it should be connected to the v ss (no. 2) pin. pin assignment v out nc ce v in v bias v ss v ss (bottom view) usp-6c 3 2 1 6 5 4 ce nc v out v in v bias (top view) sot-89-5 123 4 52 ce v ss v bias v out v in (bottom view) wlp-5-02 ce 2 v out 14 v in 3 v bias 5 v ss pin number usp-6c sot-26w sot-89-5 wlp-5-02 pin name functions 1 6 3 3 v bias power supply input 2 5 2 5 v ss ground 3 4 4 v in driver transistor input 4 3 5 1 4 v out output 5 - - nc 2 no connection 6 1 1 2 ce on/off control function chart XC6602 series, type a/b pin name signal status l stand-by h active ce open stand-by ordering information product classification XC6602 ?????- ( *1 ) with soft-start circuit built-in, can be selected from with or without functions designator item symbol description a soft-start included type b soft-start excluded ? output voltage 05~18 e.g. 1.2v =1 =2 output voltage accuracy 1 0.015v (v out 1.2v) 0.020v (v out R 1.2v) er-g usp-6c (3,000/reel) mr-g sot-26w (3,000/reel) pr-g sot-89-5 (1,000/reel) ?- ( *1 ) packages (order unit) 0r-g wlp-5-02 (3,000/reel) (*1) the ?-g? suffix denotes halogen and antimony free as well as being fully eu rohs compliant.
3/31 XC6602 series ? type a ? type b * diodes inside the circuits are esd protection diodes and parasitic diodes. block diagrams a bsolute maximum ratings ta = 2 5 parameter symbol ratings units bias volta g e v bia s v ss -0.3 v ss +6.5 v input voltage v in v ss -0.3 v ss +6.5 v output current i out 1.65 (*1) a v ss -0.3 v bias +0.3 Qv ss +6.5 v output voltage v out v ss -0.3 v in +0.3 Qv ss +6.5 v ce input voltage v ce v ss -0.3 v ss +6.5 v 120 usp-6c 1000 ( pcb mounted ) (*2) 250 sot-26w 600 ( pcb mounted ) (*2) power dissipation pd mw 500 sot-89-5 1300 ( pcb mounted ) (*2) 750 ( pcb mounted ) (*2) wlp-5-02 topr -40 +85 operating ambient temperature ts t g - 5 5 +125 storage temperature (*1) i out Qpd/ v in -v out (*2) the power dissipation measured with the test boar d condition is listed as reference data. please refer to page 25 28 for details.
4/31 XC6602 series parameter symbol conditions min typ max units circuit bias voltage v bias electrical characteristics ta = 2 5 2.5 - 6.0 v input voltage v in 0.5 - 3.0 v v out(t) 1.2v -0.015 +0.015 output voltage v out(e) (*2) i out =100ma v out(t) R1.2v -0.020 v out(t) (*3) +0.020 v v out(t) Q 1.2v, v bias =v ce =2.5v maximum output current * i outmax 1.0 - - a v out(t) 1.2v,v bias =v ce =v out(t) +1.3v load regulation v out 1ma Qi out Q 1a - 13 26 mv (wlp-5-02) load regulation (usp-6c,sot-26w,sot-89-5) v out 1ma Qi out Q 1a - 37 68 mv dropout voltage vdif (*5) i out =1a - e-1 (*8) mv supply current 1 (*9) i bias i out =0a 76 100 143 a v out(t) 1.2v 0.1 - 8.7 supply current 2 i in i out =0a v out(t) R1.2v 3.9 - 14.2 a stand-by current 1 i bias_stb b v bias =6.0v,v in =3.0v,v ce =v ss - 0.01 0.10 a stand-by current 2 i in_stb b v bias =6.0v,v in =3.0v,v ce =v ss - 0.01 0.15 a v out(t) Q 1.2v,v ce =v bias 2.5v Qv bias Q 6.0v bias line regulation v out / ( v bias ? v out ) v out(t) 1.2v,v ce =v bias v out(t) +1.3v Qv bias Q6.0v - 0.01 0.10 %/v input line regulation v out / ( v in ? v out ) v out(t) +0.1v Qv in Q3.0v - 0.01 0.10 %/v bias uvlo voltage v bias_uvlod v ss - 1.28 v bias uvlo release voltage v bias_uvlor 2.5 - 6.0 v input uvlo voltage v in_uvlod v ss - 0.23 v input uvlo release voltage v in_uvlor 0.5 - 3.0 v output voltage temperature characteristics v out / ( to p r ? v out ) i out =100ma - 30 - ppm/ -40 Q to p r Q85 bias ripple rejection ratio v bias_psrr v bias =v ce =3.6v dc +0.2v p-pac i out =100ma,f=1khz,c bias =open - 60 - db input ripple rejection ratio v in_psrr v in =v out(t) +0.3v dc +0.2v p-pac i out =100ma,f=1khz,c in =open - 75 - db limit current *4 i lim v out =v out(e) 0.95 1.0 1.3 - a short current i short v out =v ss - 90 - ma thermal shutdown detect temperature t tsd junction temperature - 150 - thermal shutdown release temperature t tsr junction temperature - 125 - thermal shutdown hysteresis width t tsd - t tsr junction temperature - 25 - c l auto-discharge resistance r dchg v ce =v ss ,v out =v out(t) 130 190 255 ce ?h? level voltage v ceh 0.65 - 6.00 v ce ?l? level voltage v cel v ss - 0.41 v ce ?h? level current i ceh v bias =v ce =6.0v 3.2 6.0 10.6 a ce ?l? level current i cel v bias =6.0v,v ce =v ss -0.1 - 0.1 a soft-start time (type a) (*10) t ss v ce =0v 3.6v,tr=5 s 225 430 600 s output rise time (type b) (*10) t on v ce =0v 3.6v,tr=5 s - - 110 s v out t Q1.2v - - 70 ma c l =2.2 f v out t 1.2v - - 85 ma v out t Q1.2v - - 155 ma inrush current (type a) i rush c l =10 f v out t 1.2v - - 215 ma * 1: unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias =c in =1.0 f, c l =2.2 f * 2: v out(e) = effective output voltage * 3: v out(t) = nominal output voltage * 4: mount conditions affect heat dissipation. maximum output cu rrent is not guaranteed when tsd starts to operate earlier. * 5: vdif = {v in1 (*6) -v out1 (*7) }. * 6: v in1 is an input voltage when v out1 appears at the output during decreasing input voltage gradually. * 7: v out1 is a voltage equal to 98% of the output voltage where v bias =v ce =3.6 and v in =v out(t) +0.3v at i out =1a is input to the v in pin. * 8: please refer to the table e-1 named dropout voltage chart * 9: supply current 1 may be fluctuated because that some bias current flows into the output. * 10: a time between the ce input goes over the ce h threshold and the output reaches v out(e) x0.9v.
5/31 XC6602 series electrical characteristics (continued) output voltage chart (wlp-5-02) e-1 dropout voltage (mv) v bias =3.0v v bias =3.3v v bias =3.6v v bias =4.2v v bias =5.0v nominal output voltage vdif(mv) vdif(mv) vdif(mv) vdif(mv) vdif(mv) v out(t) v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. 0.5 2.5 79 134 2.8 3.1 3.7 4.5 0.6 2.4 2.7 3.0 3.6 4.4 0.7 2.3 82 139 76 129 2.6 2.9 3.5 4.3 0.8 2.2 85 144 2.5 79 134 2.8 3.4 4.2 0.9 2.1 88 149 2.4 2.7 3.3 73 124 4.1 1.0 2.0 91 154 2.3 82 139 2.6 76 129 3.2 4.0 1.1 1.9 94 159 2.2 85 144 2.5 79 134 3.1 3.9 72 122 1.2 1.8 100 169 2.1 88 149 2.4 3.0 3.8 1.3 1.7 109 184 1.9 91 154 2.3 82 139 2.9 3.7 1.4 1.6 118 199 1.9 94 159 2.2 85 144 2.8 3.6 1.5 1.5 130 219 1.8 100 169 2.1 88 149 2.7 3.5 1.6 1.4 144 244 1.7 109 184 2.0 91 154 2.6 76 129 3.4 1.7 1.3 171 289 1.6 118 199 1.9 94 159 2.5 79 134 3.3 73 124 1.8 1.2 201 339 1.5 130 219 1.8 100 169 2.4 82 139 3.2 76 129 * dropout voltage is defined as the v gs (=v bias ?v out(e) ) of the driver transistor. output voltage chart (usp-6c,sot-26w,sot-89-5) e-1 dropout voltage (mv) v bias =3.0v v bias =3.3v v bias =3.6v v bias =4.2v v bias =5.0v nominal output voltage vdif (mv) vdif (mv) vdif (mv) vdif (mv) vdif (mv) v out(t) v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. v gs (v) typ. max. 0.5 2.5 152 218 2.8 3.1 3.7 4.5 0.6 2.4 2.7 3.0 3.6 4.4 0.7 2.3 155 223 146 213 2.6 2.9 3.5 4.3 0.8 2.2 158 228 2.5 152 218 2.8 3.4 4.2 0.9 2.1 162 233 2.4 2.7 3.3 140 208 4.1 1.0 2.0 165 238 2.3 155 223 2.6 146 213 3.2 4.0 1.1 1.9 167 243 2.2 158 228 2.5 152 218 3.1 3.9 137 206 1.2 1.8 169 253 2.1 162 233 2.4 3.0 3.8 1.3 1.7 179 268 2.0 165 238 2.3 155 223 2.9 3.7 1.4 1.6 189 283 1.9 167 243 2.2 158 228 2.8 3.6 1.5 1.5 202 303 1.8 169 253 2.1 162 233 2.7 3.5 1.6 1.4 213 328 1.7 179 268 2.0 165 238 2.6 146 213 3.4 1.7 1.3 225 373 1.6 189 283 1.9 167 243 2.5 152 218 3.3 140 208 1.8 1.2 255 423 1.5 202 303 1.8 169 253 2.4 155 223 3.2 146 213 * dropout voltage is defined as the v gs (=v bias ?v out(e) ) of the driver transistor.
6/31 XC6602 series operational explanation the voltage divided by resistors r1 and r2 is compared with the internal reference voltage by the error amplifier. the v out pin is then driven by the subsequent out put signal. the output voltage at the v out pin is controlled and stabilized by a system of negative feedback. v bias pin is power supply pin for output voltage control circuit, protection circuit and ce circuit. also, the v bias pin supplies some current as output current. v in pin is connected to a driver trans istor and provides output current. in order to obtain high efficient output current through low on-resistance, please take enough v gs (=v bias ? v out(e) ) of the driver transistor. figure1: XC6602 series, type a with the XC6602 (type a), the inrush current (i rush ) from v in to v out for charging c l at start-up can be reduced and makes the v in stable. as for the XC6602, the soft-start time in the type a is optimized internally. on t he other hand, the type b of the XC6602 does not have the soft-start time function. the XC6602 series includes a combination of a fixed current lim iter circuit and a foldback short-circuit protection. when the output current reaches the current limit, t he output voltage drops and this operation makes the output current foldback to be decreased. when the junction temperature of the built-in driver transistor reaches the te mperature limit, the thermal shutdown circuit operates and the driver transistor will be set to off. the ic resumes its operation when the thermal shutdown function is released and the ic?s operation is automatically restored because the junction te mperature drops to the level of the thermal shutdown release temperature. when the v bias pin and v in pin voltage drops, the output driver transistor is se t to off by uvlo function to prevent false output caused by unstable operation of the internal circuitry. when the v bias pin voltage and the v in pin voltage rises at release voltage, the uvlo function is released. the driver transistor is turned on and start to operate voltage regulation.
7/31 XC6602 series operational explanation (continued) the XC6602 internal circuitry can be shutdown via the signal to the ce pin. in shutdown mode with ce low level voltage, the v out pin will be pulled down to the v ss level via c l discharge resistance (r dchg ) placed in parallel to r1 and r2. the ce pin has pull-down circuitry so that ce input current fl ows during ic operation. if the ce pin voltage is taken from v bias pin or v ss pin then logic is fixed and the ic will operate normall y. however, supply current may increase as a result of through current in the ic's internal circuitry when medium voltage is input. XC6602 series can quickly discharge the el ectric charge at t he output capacitor (c l ) via the internal transistor located between the v out pin and the v ss pin when a low signal to the ce pin which enables a whole ic circuit put into off state. when the ic is disabled, electric charge at the output capacitor (c l ) is quickly discharged so that it could avoids malfunction. discharge time of t he output capacitor (c l ) is set by the c l auto-discharge resistance (r dchg ) and the output capacitor (c l ). by setting time constant of a c l auto-discharge resistance value (r dchg ) and an output capacitor value (c l ) as (= c l x r dchg ), the output voltage after discharge via the internal transistor is calculat ed by the following formula. please also note r dchg is depended on v bias . when v bias is larger, r dchg is smaller. v = v out(e) e -t/ or = ln v out(e) / v (v: output voltage after discharge, v out(e) : initial output voltage, t: discharge time, : c l auto-discharge resistance r dchg c l output capacitance with the XC6602 series, a stable output voltage is achievable even if used with low esr capacitors, as a phase compensation circuit is built-in. the output capacitor (c l ) should be connected as close to v out pin and v ss pin to obtain stable phase compensation. values required for the phase compensation are as the table below. for a stable power input, please connect an bias capacitor (c bias ) between the v bias pin and the v ss pin. also, please connect an input capacitor (c in ) between the v in pin and the v ss pin. in order to ensure the stable phase compensation while avoiding run-out of valu es, please use the capacitor (c bias , c in , c l ) which does not depend on bias or temperature too much. the table below shows recommended values of c bias , c in , c l . chart 1 recommended values of c bias, c in, c l (min.) bias capacitor input capacitor output capacitor output voltage range v out(t) c bias c in c l 0.5v 1.8v 1.0 f 1.0 f 2.2 f
8/31 XC6602 series notes on use 1. for temporary, transitional voltage dr op or voltage rising phenomenon, the ic is liable to malfunction should the ratings be exceeded. 2. where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. please keep the resistance low for the v bias , v in and v ss wiring in particular. 3. please wire the c bias , c in and c l as close to the ic as possible. 4. capacitances of these capacitors (c bias , c in, c l ) are decreased by the influences of bias voltage and ambient temperature. care shall be taken for capacitor selection to ensure stability of phase compensation from the point of esr influence. 5. when it is used in a quite small input / output dropout voltage, output may go into unstable operation. please test it thoroughly before using it in production. 6. torex places an importance on improvi ng our products and their reliability. we request that users incorporate fail -safe designs and post-aging protection tr eatment when using torex products in their systems 7. note on mounting (wlp-5-02) (1) mount pad design should be optimized for user's conditions. (2) sn-ag-cu is used for the package terminals. if eutectic so lder is used, mounting reliability is decreased. please do not use eutectic solder paste. (3) when underfill agent is used to increase interfacial bond ing strength, please take en ough evaluation for selection. some underfill materials and applied conditions may decrease bonding reliability. (4) the ic has exposed surface of silicon material in the top ma rking face and sides so that it is weak against mechanical damages. please take care of handling to avoid cracks and breaks. (5) the ic has exposed surface of silicon material in the top marking face and sides. please use the ic with keeping the circuit open (avoiding short-circuit from the out). (6) semi-transparent resin is coated on the circuit face of the package. please be noted th at the usage under strong lights may affects device performance.
9/31 XC6602 series test circuits circuit circuit circuit circuit a v v v c in 1.0f c bias 1.0f c l 2.2f r l v a v out v in ce v ss v bias
10/31 XC6602 series test circuits (continued) circuit (timing chart) XC6602 series, type a XC6602 series, type b
11/31 XC6602 series typical performance characteristics * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (1) output voltage vs. output current (2) output voltage vs. bias voltage XC6602x051mr-g 0.0 0.1 0.2 0.3 0.4 0.5 0.6 00 . 511 . 5 output current: i out (a) output voltage: v out (v) vin=0.8v vin=1.0v XC6602x121mr-g 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 00 . 511 . 5 output current: i out (a) output voltage: v out (v) vin=1.5v vin=1.7v XC6602x181mr-g 0.0 0.5 1.0 1.5 2.0 00 . 511 . 5 output current: i out (a) output voltage: v out (v) vin=2.1v vin=2.3v XC6602x051xr-g 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 bias voltage: v bi as (v) output voltage: v out (v) 6 iout=0ma iout=1ma iout=100ma XC6602x121xr-g 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0123456 bias voltage: v bias (v) output voltage: v out (v) iout=0ma iout=1ma iout=100ma XC6602x181xr-g 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0123456 bias voltage: v bi as (v) output voltage: v out (v) iout=0ma iout=1ma iout=100ma * mount conditions affect heat dissipation. thermal shutdown may start to operate before reaching the current limit.
12/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (3) output voltage vs. input voltage (4) dropout voltage vs. output current XC6602x051xr-g 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0123 input voltage: v in (v) output voltage: v out (v) iout=0ma iout=1ma iout=100ma XC6602x121xr-g 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0123 input voltage: v in (v) output voltage: v out (v) iout=0ma iout=1ma iout=100ma XC6602x181xr-g 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0123 input voltage: v in (v) output voltage: v out (v) iout=0ma iout=1ma iout=100ma XC6602x121mr-g 0 50 100 150 200 250 0 200 400 600 800 1000 output current: i out (ma) dropout voltage: vdif(mv) vbias=3.0v vbias=3.3v vbias=3.6v vbias=4.2v vbias=5.0v XC6602xxx1mr-g 0 50 100 150 200 250 300 350 12345 v gs (*1) (v) dropout voltage: vdif(mv) 6 ta=-40 ta=25 ta=85 i out =1a (*1) v gs is a gate ?source voltage of the dr iver transistor that is defined as the value of v bias - v out(e) . a value of the dropout voltage is determined by the value of the v gs .
13/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (5) supply bias current vs. bias voltage (6) supply input current vs. input voltage XC6602x051xr-g 0 20 40 60 80 100 120 140 160 0123456 bias voltage: v bi as (v) supply bias current: i bi as (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open v ce =v bias , i out =0ma XC6602x121xr-g 0 20 40 60 80 100 120 140 160 0123456 bias voltage: v bi as (v) supply bias current: i bias (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open v ce =v bias , i out =0ma XC6602x181xr-g 0 20 40 60 80 100 120 140 160 0123456 bias voltage: v bi as (v) supply bias current: i bi as (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open v ce =v bias , i out =0ma, XC6602x051xr-g 0 5 10 15 20 00.511.522.53 input voltage: v in (v) supply input current: i in (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open i out =0ma XC6602x121xr-g 0 5 10 15 20 00.511.522.53 input voltage: v in (v) supply input current: i in (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open i out =0ma XC6602x181xr-g 0 5 10 15 20 00.511.522.53 input voltage: v in (v) supply input current: i in (a) ta=-40 ta=25 ta=85 c in =c bias =c l =open i out =0ma
14/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 XC6602x051r-g 0.48 0.49 0.5 0.51 0.52 -50 0 50 100 ambient temperature: ta() output voltage: v out (v) iout=1ma iout=100ma XC6602x121r-g 1.18 1.19 1.2 1.21 1.22 -50 0 50 100 ambient temperature: ta() output voltage: v out (v) iout=1ma iout=100ma XC6602x181r-g 1.78 1.79 1.8 1.81 1.82 -50 0 50 100 ambient temperature: ta() output voltage: v out (v) iout=1ma iout=100ma XC6602x051r-g 40 60 80 100 120 140 160 -50 0 50 100 ambient temperature: ta() supply bias current: i bi as (a) c in =c bias =c l =open i out =0ma XC6602x121r-g 40 60 80 100 120 140 160 -50 0 50 100 ambient temperature: ta() supply bias current: i bi as (a) c in =c bias =c l =open i out =0ma XC6602x181r-g 40 60 80 100 120 140 160 -50 0 50 100 ambient temperature: ta() supply bias current: i bi as (a) c in =c bias = c l =open i out =0ma (7) output voltage vs. ambient temperature (8) supply bias current vs. ambient temperature
15/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 XC6602x051r-g 0 1 2 3 -50 0 50 100 ambient temperature: ta() supply input current: i in (a) c in =c bias =c l =open i out =0m a XC6602x121r-g 0 2 4 6 8 10 12 -50 0 50 100 ambient temperature: ta() supply input current: i in (a) c in =c bias =c l =open i out =0m a XC6602x181r-g 4 6 8 10 12 14 16 -50 0 50 100 ambient temperature: ta() supply input current: i in (a) c in =c bias =c l =open i out =0m a (9) supply input current vs. ambient temperature
16/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (10) bias transient response (11) input transient response XC6602x051xr-g 0.48 0.5 0.52 0.54 0.56 0.58 time (200s/div) output voltage: v out (v) 0 1 2 3 4 5 bias voltage: v bias (v) XC6602x051xr-g 0.48 0.5 0.52 0.54 0.56 0.58 time (200s/div) output voltage: v out (v) -2 -1 0 1 2 3 input voltage: v in (v) c bias =open v bias =3.0v4.0v(tr=tf=5s), i out =100ma c in =open v in =0.8v1.8v(tr=tf=5s), i out =100m a XC6602x121xr-g 1.18 1.2 1.22 1.24 1.26 1.28 time (200s/div) output voltage: v out (v) 0 1 2 3 4 5 bias voltage: v bi as (v) XC6602x121xr-g 1.18 1.2 1.22 1.24 1.26 1.28 time (200s/div) output voltage: v out (v) -1.5 -0.5 0.5 1.5 2.5 3.5 input voltage: v in (v) c bias =open v bias =3.0v4.0v(tr=tf=5s) i out =100ma c in =open v in =1.5v2.5v(tr=tf=5s), i out =100ma XC6602x181xr-g 1.78 1.8 1.82 1.84 1.86 1.88 time (200s/div) output voltage: v out (v) 0 1 2 3 4 5 bias voltage: v bi as (v) XC6602x181xr-g 1.78 1.8 1.82 1.84 1.86 1.88 time (200s/div) output voltage: v out (v) -1 0 1 2 3 4 input voltage: v in (v) c bias =open v bias =3.6v4.6v(tr=tf=5s) i out =100ma c in =open v in =2.1v3.1v(tr=tf=5s), i out =100m a
17/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (12) load transient response XC6602x051xr-g 0.46 0.5 0.54 0.58 0.62 0.66 time (200s/div) output voltage: v out (v) -0.3 -0.2 -0.1 0 0.1 0.2 outpur current: i out (a) i out =1ma?100ma(tr=tf=5s ) output current output voltage XC6602x121xr-g 1.16 1.2 1.24 1.28 1.32 1.36 time (200s/div) output voltage: v out (v) -0.3 -0.2 -0.1 0 0.1 0.2 outpur current: i out (a) i out =1ma?100ma(tr=tf=5s ) output current output voltage XC6602x181xr-g 1.76 1.8 1.84 1.88 1.92 1.96 time (200s/div) output voltage: v out (v) -0.3 -0.2 -0.1 0 0.1 0.2 outpur current: i out (a) i out =1ma?100ma(tr=tf=5s ) output current output voltage
18/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 XC6602a051xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage input current rush current XC6602a121xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100m a ce input voltage input current rush current XC6602a181xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage input current rush current XC6602a051xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage input current XC6602a121xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage input current XC6602a181xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -50 0 50 100 150 200 input current: i in (ma) v ce =0v3.6v(tr=5s ) i out =100m a input current ce input voltage (13) ce input voltage response
19/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (13)ce input voltage response (continued) XC6602a051xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100ma ce input voltage input current XC6602a051xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100m a ce input voltage input current rush current XC6602a121xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100ma ce input voltage input current XC6602a181xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100m a ce input voltage input current XC6602a121xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100ma ce input voltage rush current input current XC6602a181xr-g -6 -4 -2 0 2 4 time (50s/div) ce input voltage: v ce (v) -100 0 100 200 300 400 input current: i in (ma) c l =10 f v ce =0v3.6v(tr=5s), i out =100m a rush current ce input voltage input current
20/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (14) ce rising response time XC6602a051xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -0.4 0 0.4 0.8 1.2 1.6 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100m a ce input voltage output voltage XC6602a121xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -0.5 0 0.5 1 1.5 2 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage output voltage XC6602a181xr-g -6 -4 -2 0 2 4 time (200s/div) ce input voltage: v ce (v) -1 0 1 2 3 4 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage output voltage XC6602b051xr-g -6 -4 -2 0 2 4 time (40s/div) ce input voltage: v ce (v) -0.4 0 0.4 0.8 1.2 1.6 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage output voltage XC6602b121xr-g -6 -4 -2 0 2 4 time (40s/div) ce input voltage: v ce (v) -0.5 0 0.5 1 1.5 2 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage output voltage XC6602b181xr-g -6 -4 -2 0 2 4 time (40s/div) ce input voltage: v ce (v) -1 0 1 2 3 4 output voltage: v out (v) v ce =0v3.6v(tr=5s ) i out =100ma ce input voltage output voltage
21/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (15) v in rising response time XC6602a051xr-g -1.5 -1 -0.5 0 0.5 1 time (200s/div) input voltage: v in (v) -0.4 0 0.4 0.8 1.2 1.6 output voltage: v out (v) c in =open v in =0v0.8v(tr=5s), i out =100ma output voltage input voltage XC6602a121xr-g -3 -2 -1 0 1 2 time (200s/div) input voltage: v in (v) -0.5 0 0.5 1 1.5 2 output voltage: v out (v) c in =open v in =0v1.5v(tr=5), i out =100m a output voltage input voltage XC6602a181xr-g -2 -1 0 1 2 3 time (200s/div) input voltage: v in (v) -1 0 1 2 3 4 output voltage: v out (v) c in =open v in =0v2.1v(tr=5s), i out =100m a output voltage input voltage
22/31 XC6602 series typical performance characteristics (continued) * unless otherwise stated, v bias =v ce =3.6v, v in =v out(t) +0.3v, i out =1ma, c bias = c in =1.0 f, c l =2.2 f, ta=25 (10)^? (17) input voltage ripple rejection rate (16) bias voltage ripple rejection rate XC6602x051xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v bi as_psrr (db) c bias =open v bias =3.6v dc +0.2vp-p ac, i out =100m a XC6602x121xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v bias_psrr (db) c bias =open v bias =3.6v dc +0.2vp-p ac , i out =100m a XC6602x181xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v bias_psrr (db) c bias =open v bias =3.6v dc +0.2vp-p ac , i out =100m a XC6602x051xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v i n _psrr (db) c in =open v in =0.8v dc +0.2vp-p ac , i out =100ma XC6602x121xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v i n _psrr (db) c in =open v in =1.5v dc +0.2vp-p ac , i out =100ma XC6602x181xr-g 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 1000 10000 frequency (khz) v i n _psrr (db) c in =open v in =2.1v dc +0.2vp-p ac , i out =100ma
23/31 XC6602 series packaging information sot-26w (unit : mm) 1 3 2.90.2 0.4 +0.1 -0.05 1.90.2 0.15 +0.1 -0.05 00.1 2 6 4 (0.95) 5 2.00.05 0.6max 0.250.05 1.00.1 0.700.05 wlp-5-02 2.50.1 0.8 min 4.35 max (0.1) 1.50.1 5 5 (0.4) 0.8 min (unit : mm) 0 . 5 1pin indent 1 2 3 4 5 (0.235) 0.4 max 1.250.04 0.880.04 (0.19) (0.192) (0.866) (0.5) 0.1250.025 5-0.250.04
24/31 XC6602 series packaging information (continued) usp-6c reference pattern layout usp-6c reference metal mask design
25/31 XC6602 series packaging information (continued) usp-6c power dissipation power dissipation data for the usp-6c is shown in this page. board mount (tj max = 125 ) ambient temperature power dissipation pd mw thermal resistance ( /w) 25 1000 85 400 100.00 pd-ta ? 0 200 400 600 800 1000 1200 25 45 65 85 105 125 x?ta S?p?pdmw the value of power dissipation varies with the mount board conditions. please use this data as the referenc e data taken in the following condition. 1. measurement condition condition: mount on a board ambient: natural convection soldering: lead (pb) free board: dimensions 40 x 40 mm (1600 mm 2 in one side) copper (cu) traces occupy 50% of the board area in top and back faces package heat-sink is tied to the copper traces material: glass epoxy (fr-4) thickness: 1.6 mm through-hole: 4 x 0.8 diameter evaluation board (unit: mm) 2. power dissipation vs. ambient temperature pd vs. ta power dissipation: pd (mw) ambient temperature: ta ( )
26/31 XC6602 series packaging information (continued) sot-26w power dissipation power dissipation data for the sot-26w is shown in this page. the value of power dissipation varies with the mount board conditions. please use this data as the referenc e data taken in the following condition. u??gmm evaluation board (unit: mm) 1. measurement condition condition: mount on a board ambient: natural convection soldering: lead (pb) free board: dimensions 40 x 40 mm (1600 mm 2 in one side) copper (cu) traces occupy 50% of the board area in top and back faces package heat-sink is tied to the copper traces (board of sot-26 is used.) material: glass epoxy (fr-4) thickness: 1.6 mm through-hole: 4 x 0.8 diameter 2. power dissipation vs. ambient temperature board mount (tj max = 125 ) ambient temperature power dissipation pd mw thermal resistance ( /w) 25 600 85 240 166.67 pd-t a? 0 100 200 300 400 500 600 700 25 45 65 85 105 125 x?ta S?p?pdmw ambient temperature: ta ( ) power dissi p ation: pd ( mw ) pd vs. ta
27/31 XC6602 series packaging information (continued) sot-89-5 power dissipation board mount (tj max = 125 ) ambient temperature power dissipation pd mw thermal resistance ( /w) 25 1300 85 520 76.92 pd-ta? 0 200 400 600 800 1000 1200 1400 25 45 65 85 105 125 x?ta S?p?pdmw power dissipation data for the sot-89-5 is shown in this page. the value of power dissipation varies with the mount board conditions. please use this data as the referenc e data taken in the following condition. 1. measurement condition condition: mount on a board ambient: natural convection soldering: lead (pb) free board: dimensions 40 x 40 mm (1600 mm 2 in one side) copper (cu) traces occupy 50% of the board area in top and back faces package heat-sink is tied to the copper traces material: glass epoxy (fr-4) thickness: 1.6 mm through-hole: 5 x 0.8 diameter evaluation board (unit: mm) 2. power dissipation vs. ambient temperature pd vs. ta ambient temperature: ta ( ) power dissipation: pd (mw)
28/31 XC6602 series z wlp-5-02 power dissipation packaging information (continued) power dissipation data for the wlp-5-02 is shown in this page. the value of power dissipation varies with the mount board conditions. please use this data as one of reference data taken in the described condition. 1. measurement conditions 2.54 1.4 40.0 40.0 2.5 28.9 28.9 condition : mount on a board ambient : natural convection soldering : lead (pb) free : 40mm40mm 1600mm 2 in one side board dimensions metal area : 1st metal layer about 50% 2nd inner metal layer about 50% 3rd inner metal layer about 50% 4th metal layer about 50% 4 separations is each layer connected to each pin material : glass epoxy fr-4 thickness : 1.6mm through-hole : 4 x 0.8 diameter 2. power dissipation vs. ambient temperature board mount ( tjmax=125 ) ambient temperature ( ) power dissipation pd (mw) thermal resistance ( /w 25 750 85 300 133.33 pd vs. ta power dissi p ation pd mw a mbient tem p erature ta
29/31 XC6602 series marking rule mark product series p XC6602a****-g r XC6602b****-g mark represents product series represents voltage range 123 64 sot-26w 5 output voltage (v) mark output voltage (v) a 0.5 n 1.5 b 0.6 p 1.6 c 0.7 r 1.7 d 0.8 s 1.8 e 0.9 t - f 1.0 u - h 1.1 v - k 1.2 x - l 1.3 y - m 1.4 z - ? represents production lot numbe r 01 to 09, 0a to 0z, 11 to 9z, a1 to a9, aa to z9, b1 to zz in order. (g, i, j, o, q, w excluded) *no character inversion used.
30/31 XC6602 series mar k ing rule (continued) sot-89-5 524 123 1 2 3 6 5 4 usp-6c represents product series mark product series 7 XC6602******-g mark product series represents regulator type a XC6602a****-g b XC6602b****-g represents voltage range wlp-5-02 1 2 4 3 mark output voltage (v) mark output voltage (v) mark output voltage (v) 0 0.5 a 1.5 n - 1 0.6 b 1.6 p - 2 0.7 c 1.7 r - 3 0.8 d 1.8 s - 4 0.9 e - t - 5 1.0 f - u - 6 1.1 h - v - 7 1.2 k - x - 8 1.3 l - y - 9 1.4 m - z - ? represents production lot numbe r 01 to 09, 0a to 0z, 11 to 9z, a1 to a9, aa to az, b1 to zz in order. (g, i, j, o, q, w excluded)
31/31 XC6602 series 1. the products and product specifications cont ained herein are subject to change without notice to improve performance characteristic s. consult us, or our representatives before use, to confirm that the informat ion in this datasheet is up to date. 2. we assume no responsibility for any infringement of patents, pat ent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. the products in this datasheet are not devel oped, designed, or approved for use with such equipment whose failure of malfuncti on can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. atomic energy; aerospace; transpor t; combustion and associated safety equipment thereof.) 5. please use the products listed in this datasheet within the specified ranges. should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. we assume no responsibility for damage or loss due to abnormal use. 7. all rights reserved. no part of this dat asheet may be copied or reproduced without the prior permission of torex semiconductor ltd.

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