di gital transistors (built-in resistors) EMH3 digital transistor (npn+npn) features z two dtc143t chips in a umt package z transistor elements are independ ent, eliminating interference z mounting cost and area can be cut in half external circuit marking:h3 absolute maximum ratings(ta=25 ) parameter symbol limits unit collector-base voltage v (br)cbo 50 v collector-emitter voltage v (br)ceo 50 v emitter-base voltage v (br)ebo 5 v collector current i c 100 ma collector power dissipation p c 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions collector-base breakdown voltage v (br)cbo 50 v ic=50 a collector-emitter breakdown voltage v (br)ceo 50 v ic=1ma emitter-base breakdown voltage v (br)ebo 5 v i e =50 a collector cut-off current i cbo 0.5 av cb =50v emitter cut-off current i ebo 0.5 av eb =4v collector-emitter saturation voltage v ce(sat) 0.3 v i c =5ma,i b =0.25ma dc current transfer ratio h fe 100 600 v ce =5v,i c =1ma input resistance r 1 3.29 4.7 6.11 k ? transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz sot-563 1 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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