? semiconductor components industries, llc, 2006 march, 2006 ? rev. 1 1 publication order number: NTLGF3501N/d NTLGF3501N power mosfet and schottky diode 20 v, 4.6 a fetky , n?channel, 2.0 a schottky barrier diode, dfn6 features ? flat lead 6 terminal package 3x3x1 mm ? reduced gate charge to improve switching response ? enhanced thermal characteristics ? this is a pb?free device applications ? buck converter, inverting buck/boost ? high side dc?dc conversion circuits ? power management in portable, hdd and computing mosfet maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 20 v gate?to?source v oltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 3.4 a t a = 85 c 2.5 t 10 s t a = 25 c 4.6 power dissipation (note 1) steady state t a = 25 c p d 1.74 w t 10 s 3.13 continuous drain current (note 2) steady state t a = 25 c i d 2.8 a t a = 85 c 2.0 power dissipation (note 2) t a = 25 c p d 1.14 w pulsed drain current t p = 10 s i dm 13.8 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 1.7 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size (cu area = 0.5 in sq). device package shipping ? ordering information http://onsemi.com 3 4 20 v 20 v 70 m @ 4.5 v 2.0 a r ds(on) typ 4.6 a 0.36 v i d typ v (br)dss mosfet schottky diode v r max i f max v f typ NTLGF3501Nt1g dfn6 (pb?free) 3000 / tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. marking diagrams 3501 = specific device code a = assembly location y = year ww = work week = pb?free package 3501 ayww 1 2 5 1 6 heatsink 1 dfn6 case 506ag 13 654 2 1, 6 = anode 2, 5 = source/cathod e 3 = gate 4 = drain 1 heatsink 2 NTLGF3501Nt2g dfn6 (pb?free) 3000 / tape & ree l
NTLGF3501N http://onsemi.com 2 schottky diode maximum ratings (t j = 25 c unless otherwise noted) parameter symbol max unit peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current i f 2.0 a thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 2) r ja 110 c/w junction?to?ambient ? t 10 s (note 2) r ja 56 c/w junction?to?ambient ? steady state (note 3) r ja 72 c/w junction?to?ambient ? t 10 s (note 3) r ja 40 c/w 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 22 mv/ c zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v t j = 25 c 1.0 a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.6 2.0 v gate threshold temperature coefficient v gs(th) /t j ?2.8 mv/ c drain?to?source on?resistance r ds(on) v gs = 4.5, i d = 3.4 a 70 90 m v gs = 2.5, i d = 1.7 a 95 120 forward transconductance g fs v ds = 10 v, i d = 3.4 a 6.7 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 144 275 pf output capacitance c oss 67 125 reverse transfer capacitance c rss 22 40 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 3.4 a 2.1 10 nc threshold gate charge q g(th) 0.11 gate?to?source charge q gs 0.42 gate?to?drain charge q gd 0.7 switching characteristics (note 5) turn?on delay time t d(on) v gs = 4.5 v, v dd = 16 v, i d = 3.4 a, r g = 2.5 4.8 10 ns rise time t r 13.6 25 turn?off delay time t d(off) 9.0 20 fall time t f 1.9 5.0 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
NTLGF3501N http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.7 a t j = 25 c 0.8 1.15 v t j = 150 c 0.63 v reverse recovery time t rr v gs = 0 v, i s = 1.0 a , di s /dt = 100 a/ s 12 ns charge time t a 8.0 discharge time t b 4.0 reverse recovery charge q rr 5.0 nc schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.32 0.34 v i f = 1.0 a 0.36 0.39 maximum instantaneous reverse current i r v r = 5.0 v 100 a v r = 5 v, t j = 100 c 12 ma v r = 10 v 70 a v r = 20 v 255 6. pulse test: pulse width 300 s, duty cycle 2%. 7. switching characteristics are independent of operating junction temperatures.
NTLGF3501N http://onsemi.com 4 typical n?channel performance curves (t j = 25 c unless otherwise noted) 2 v 100 c 0 4 2 3 2.4 1.2 0.8 v ds , drain?to?source voltage (volts) i d, drain current (amps) 2 1 0 0.4 figure 1. on?region characteristics 4 2 1.5 2.5 3 2 1 1 0 3 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) figure 3. on?resistance vs. gate?to?source voltage i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage ?50 0 ?25 25 1 0.6 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ?55 c 75 150 i d = 3.4 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) 1.6 25 c 1.8 2.2 v 5 1 2 0 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 150 c 1.6 v 1.8 v 10 1000 2.8 v ds 10 v 10 15 v gs = 2.4 v to 10 v 5 77 5 4 3.5 0.1 23 0.2 0 v gs , gate?to?source voltage (volts) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) 1 i d = 3.4 a t j = 25 c r ds(on), drain?to?source resistance ( ) 5 4 1.5 2.5 4 .5 t j = 25 c v gs = 4.5 v v gs = 2.5 v 0.06 0.12 0.04 0.08 6 0.1 100 t j = 100 c 3.5 1.6 1.4 1.2 0.8 6 3.2 3.6 4 6
NTLGF3501N http://onsemi.com 5 v ds = 0 v v gs = 0 v 510 400 100 0 20 gate?to?source or drain?to?source voltage (volts) figure 7. capacitance variation c, capacitance (pf) figure 8. gate?to?source and drain?to?source voltage vs. total charge t j = 25 c c oss c iss c rss r g , gate resistance (ohms) figure 9. resistive switching time variation vs. gate resistance t, time (ns) 10 0 v gs v ds 15 1.0 1 0.1 v sd , source?to?drain voltage (volts) figure 10. diode forward voltage vs. current i s , source current (amps) v gs = 0 v 10 0.9 0.6 0.4 typical n?channel performance curves (t j = 25 c unless otherwise noted) 0 2 4 6 012 0 2 4 6 8 12 v gs v gs, gate?to?source voltage (v) i d = 3.4 a t j = 25 c v ds, drain?to?source voltage (v) q gd v ds q t q g , total gate charge (nc) 1 10 100 1 10 100 v ds = 16 v i d = 3.4 a v gs = 4.5 v t d(off) t d(on) t f t r 300 q gs 5 200 10 0.5 0.7 0.8 t j = 25 c t j = ?55 c t j = 150 c t j = 100 c figure 11. fet thermal response 0.1 0.01 0.02 0.05 0.2 single pulse d = 0.5 t, time (s) 0.000001 0.00001 0.001 0.01 1 100 1000 1 0.1 0.001 r thja(t), effective transient thermal response 0.01 0.0001 0.1 10
NTLGF3501N http://onsemi.com 6 typical schottky performance curves (t j = 25 c unless otherwise noted) 10 0.10 v f , instantaneous forward voltage (volts) i f , instantaneous forward current (amps) 1 0.1 figure 12. typical forward voltage figure 13. maximum forward voltage 10 1e?3 100e?6 10e?6 figure 14. typical reverse current v r , reverse voltage (volts) i r, reverse current (amps) figure 15. maximum reverse current 25 3 2 2.5 1 0 65 125 105 figure 16. current derating t l , lead temperature ( c) t j = 100 c 1e+0 t j = 25 c 85 freq = 20 khz i o, average forward current (amps) 3.5 20 01 0 3. 5 3 figure 17. forward power dissipation i o , average forward current (amps) 2 p fo , average power dissipation (watts) 0.2 1.8 0.30 0.5 1.5 2.5 0.50 0 t j = 25 c t j = ?40 c 10 0.10 v f , maximum instantaneous forward voltage (volts) i f , instantaneous forward current (amps) 1 0.1 t j = 125 c 0.30 0.50 t j = 100 c 10e?3 t j = 100 c t j = 125 c 10 v r , reverse voltage (volts) 2 0 0 i r, maximum reverse current (amps) 1.5 0.5 45 145 ipk/io = 20 ipk/io = 10 ipk/io = 5 ipk/io = square wave dc 1 1.6 0.4 0.6 0.8 ipk/io = 20 ipk/io = 10 ipk/io = 5 ipk/io = dc 1.4 1.2 100e?3 10e?3 1e?3 100e?6 10e+0 t j = 25 c 100e?3 t j = 100 c t j = 125 c 1e+0 t j = 125 c t j = 25 c square wave
NTLGF3501N http://onsemi.com 7 figure 18. thermal response junction?to?ambient 0.1 0.01 0.02 0.05 0.2 single pulse d = 0.5 t, time (s) 0.000001 0.00001 0.001 0.01 1 100 1000 1 0.1 0.001 r thja(t), effective transient thermal response 0.01 0.0001 0.1 10
NTLGF3501N http://onsemi.com 8 package dimensions e2 d3 bottom view h1 l 13 d2 4x e k h2 64 6x 6x b 0.10 6x 0.05 c ab c (note 3) 3.31 0.130 0.63 0.025 1.20 0.0472 0.35 0.014 0.450 0.0177 1.700 0.685 mm inches scale 10:1 0.950 0.0374 0.850 0.0334 dfn6 3*3 mm, 0.95 pitch case 506ag?01 issue o *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* ??? ??? ??? ??? c 0.15 2x 2x (a3) c c 0.08 6x c 0.10 side view top view d e c 0.15 a1 a seating plane dim min nom max millimeters a 0.80 0.90 1.00 a1 0.00 0.03 0.05 a3 0.20 ref b 0.35 0.40 0.45 d 3.00 bsc d2 1.00 1.10 1.20 d3 0.65 0.75 0.85 e 3.00 bsc e2 1.50 1.60 1.70 e 0.95 bsc k 0.21 ??? ??? l 0.30 0.40 0.50 h1 0.05 ref h2 0.40 ref notes: 1. dimensions and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimesnion b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 ntlgf3501p/d fetky is a registered trademark of international rectifier corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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