, u nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 n-channel enhancement-mode tmos field-effect transistor these tmos fets are designed for high-speed switching appli- cations such as switching power supplies, cmos logic, micropro- cessor or ttl-to-high current interface and line drivers. ? fast switching speed ? ton - toff = 7.0 ns typ ? low on-resistance ? 0.9 ohm typ mfe930 1.2 ohm typ MFE960 and mfe990 ? low drive requirement, vr3s(th) = 3.5 v max ? inherent current sharing capability permits easy paralleling of many devices lit tmos mfe930 MFE960 mfe990 2.0 ampere n-channel tmos fet 30, 60, 90 volts maximum ratings rating drain-source voltage drain-gate voltage gate source voltage drain current continuous (1) pulsed (2) total power dissipation @ tc = 25c derate above 25c operating and storage temperature range symbol mfe930 MFE960 mfe990 unit vdss vdgo vgg id idm pd _ t j- sts 35 35 60 60 90 90 30 2.0 3.0 6.2s 50 -55to150 vdc vdc vdc adc watts rnwtc c (1 ) the power dissipation of the package may result in a lower continuous drain current. 12) pulse width si 300 ps. duty cycle 2.0%. r- - a style i: fin 1.source 2. gate 3. drain icasfl notes i. dimensioning and tolerancing per ansi vi4.sm. ik. i controlling dimension: inch. 1 dimension j measured from dimension a maximum. 4. dimension i shall not vary more than 125 ?.??in zone r. this zone controlled for automatic handung. 5, dimension f appues between dimension p and u dimension 0 applies between dimension l and k mmmum. ifad diamcter is uncontrolled in dwenson p and beyond dimension k mmmum. to-205ad nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going lo press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
mfe930, 960, 990 electrical characteristics (ta = 25c unless otherwise noted.) characteristic symbol mln typ max unit off characteristics drain-source breakdown voltage (vgs - 0. id - 1" ml mfe930 MFE960 mfe990 zero gate voltage drain current (vds = maximum rating. vqs = 0) gate-body leakage current (vgs = 15vdc.vds = 0) v(br)dss (dss igss 35 60 90 ? _ ? ? ? ? ? ? ? ? 10 50 vdc /iadc nadc on characteristics* gate threshold voltage (vds = vgs. 'd = i-o ma) drain-source on-voltage (vqs - 10 v) (id = 0.5ai mfe930 MFE960 mfe990 hd-i.oai mfe930 MFE960 mfe990 (id - 2.0 a) mfe930 MFE960 mfe990 static drain-source on-resistance (vgs = 10 vdc. id = i.o adc) mfe930 MFE960 mfe990 on-state drain current (vds = 25v, vqs = iov> forward transconductance (vds = 25 v, id - 0.5 ai vgs(th) vos(on) rds(on) 'dion) 9fs 1.0 ? ? ? _ ? ? _ ? ? ? ? ? 1.0 200 ? 0.4 0.6 0.6 0.9 1.2 1.2 2.2 2.8 2.8 0.9 1.2 1.2 2.0 380 3.5 0.7 0.8 1.0 1.4 1.7 2.0 3.0 3.5 4.0 1.4 1.7 2.0 ? ? vdc vdc ohms amps mmhos dynamic characteristics input capacitance (vds = 25 v, vgs - o, f - 1.0 mhz) output capacitance (vds = 25 v, vgs = o, f = i.o mhz) reverse transfer capacitance (vds = zs v, vgs = o. f = i.o mh*i ciss coss crss ? ? ? so 49 13 70 60 18 pf pf pf switching characteristics* turn-on time see figure 1 turn-off time see figure 1 'on 'off - ? 7.0 7.0 15 15 ns na ? pul? test: pulse width e 300 /is. duty cycle * 2.0%. resistive switching figure 1 - switching test circuit + 25v figure 2 ? switching waveforms pulse generator ' w 'if \ 1 "so" ll ? 1 1 ? 1- "-j? " vin {40pf ,_ if , '!1 i 50 |l m 23 [-j 50 n attenuator ^_ \ to sampling scope so fl input *vout output vou, _ inverted input vjn ^ *'on*| 4-90% -/50% 50% 7w- pulse width 1 "10% ?-'off-*- ^\
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