bga416 rf cascode amplifier data sheet, rev. 2.1, april 2008 small signal discretes
edition 2008-04-21 published by infineon technologies ag, 81726 mnchen, germany ? infineon technologies ag 2008. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
bga416 data sheet 3 rev. 2.1, 2008-04-21 trademarks sieget ? is a registered trademark of infineon technologies ag. bga416, rf cascode amplifier revision history: 2008-04-21, rev. 2.1 previous version: 2005-07-26 page subjects (major changes since last revision) all document layout change 4-5 electrical characteristics slightly changed 7-8 figures updated
data sheet 4 rev. 2.1, 2008-04-21 bga416 rf cascode amplifier 1 rf cascode amplifier figure 1 pin connection description bga416 is a monolithic silicon cascode amplifier with high reverse isolation. a bias network is integrated for simplified biasing. note: esd: electrostatic discharge sensitive device, observe handling precaution feature ? g ma =23db at 900mhz ? ultra high reverse isolation, 60 db at 900 mhz ? low noise figure, f 50 ? = 1.2 db at 900 mhz ? on chip bias circuitry, 5.5 ma bias current at v cc = 3 v ? typical supply voltage: 2.5 to 5.0 v ?sieget ? -25 technology ? pb-free (rohs compliant) package applications ? buffer amplifier ?lnas ? oscillator active devices sot143 type package marking bga416 sot143 c1s 1 2 3 4 bga416_pin_connection.vsd rfout, 4 rfin, 2 gnd, 3 gnd, 1 bias
bga416 electrical characteristics data sheet 5 rev. 2.1, 2008-04-21 maximum ratings note: all voltages refer to gnd-node thermal resistance 2 electrical characteristics electrical characteristics at t a = 25 c (measured in test circuit specified in figure 2 ) v cc = 3 v, unless otherwise specified table 1 maximum ratings parameter symbol limit value unit voltage at pin rfout v out 6v device current 1) 1) device current is equal to current into pin rfout i d 20 ma current into pin rfin i in 0.5 ma input power p in 8dbm total power dissipation, t s < 123c 2) 2) t s is measured on the ground lead at the soldering point p tot 100 mw junction temperature t j 150 c ambient temperature range t a -65... 150 c storage temperature range t stg -65... 150 c table 2 thermal resistance parameter symbol value unit junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance r thjs 270 k/w table 3 electrical characteristics parameter symbol values unit note / test condition min. typ. max. maximum available power gain g ma 23 db f =0.9ghz 14 db f =1.8ghz insertion power gain |s 21 | 2 17 db f =0.9ghz 11 db f =1.8ghz reverse isolation |s 12 |60 db f =0.9ghz 40 db f =1.8ghz noise figure ( z s = 50 ?) f 50 ? 1.2 db f =0.9ghz 1.6 db f =1.8ghz output power at 1 db gain compression ( z s = z l =50 ? ) p -1db -3 dbm f =0.9ghz -3 dbm f =1.8ghz output third order intercept point ( z s = z l =50 ? ) oip 3 14 dbm f =0.9ghz 14 dbm f =1.8ghz device current i d 5.5 ma
data sheet 6 rev. 2.1, 2008-04-21 bga416 electrical characteristics figure 2 test circuit for electrical characteristics bga416_s_parameter_circuit.vs d out top view rfin rfout gnd gnd bias-t refere nce plane i d r eference plane bias-t in v cc n.c.
bga416 measured parameters data sheet 7 rev. 2.1, 2008-04-21 3 measured parameters power gain |s 21 | 2 , g ma = f(f) v cc = 3v, i d = 5.5ma 0 1 2 3 4 0 5 10 15 20 25 30 35 40 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma matching |s 11 |, |s 22 | = f(f) v cc = 3v, i d = 5.5ma 0 1 2 3 4 ?10 ?9 ?8 ?7 ?6 ?5 ?4 ?3 ?2 ?1 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 reverse isolation |s 12 | = f(f) v cc = 3v, i d = 5.5ma 0 1 2 3 4 ?80 ?70 ?60 ?50 ?40 ?30 ?20 ?10 0 frequency [ghz] |s 12 | [db] noise figure f = f(f) v cc = 3v, i d = 5.5ma 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 frequency [ghz] f [db]
data sheet 8 rev. 2.1, 2008-04-21 bga416 package information 4 package information figure 3 package outline sot143 figure 4 tape for sot143 device current i d = f(v cc ) 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10 11 12 v cc [v] i d [ma] (1.7) 0.8 -0.05 +0.1 1.9 b 0.1 2.9 +0.1 -0.05 0.4 0.1 max. gps05559 12 3 4 0.25 m b 10? max. 0.15 min. 0.2 a m 0.2 10? max. a 1.3 0.1 0...8? 0.08...0.15 2.4 0.15 0.1 1 2.6 4 3.15 pin 1 8 0.2 1.15 csog5812
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