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july 2011 doc id 15046 rev 2 1/17 17 stf17n62k3 STP17N62K3, stw17n62k3 n-channel 620 v, 0.28 , 15.5 a, to-220fp, to-220, to-247 supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description this supermesh3? po wer mosfet is the result of improvements applied to stmicroelectronics? s upermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max. i d pw stf17n62k3 620 v < 0.34 15.5 a 40 w STP17N62K3 620 v < 0.34 15.5 a 190 w stw17n62k3 620 v < 0.34 15.5 a 190 w 1 2 3 to-247 to-220fp to-220 1 2 3 1 2 3 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stf17n62k3 17n62k3 to-220fp tube STP17N62K3 17n62k3 to-220 tube stw17n62k3 17n62k3 to-247 tube www.st.com
contents stf17n62k3, STP17N62K3, stw17n62k3 2/17 doc id 15046 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stf17n62k3, STP17N62K3, stw17n62k3 electrical ratings doc id 15046 rev 2 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ds drain-source voltage (v gs = 0) 620 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 15.5 15.5 (1) 1. limited only by temperature allowed. a i d drain current (continuous) at t c = 100 c 10 10 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 62 62 (1) a p tot total dissipation at t c = 25 c 190 40 w i ar (3) 3. pulse width limited by tj max. avalanche current, repetitive or not- repetitive 15.5 a e as (4) 4. starting tj = 25c, i d = i ar , v dd = 50v. single pulse avalanche energy 260 mj derating factor 1.52 0.32 w/c dv/dt (5) 5. i sd 15.5 a, di/dt 400 a/s, v dd = 80% v (br)dss , v ds peak < v (br)dss . peak diode recovery voltage slope 9 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter to-220fp to-220 to-247 unit r thj-case thermal resistance junction-case max 3.13 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 4/17 doc id 15046 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 620 v i dss zero gate voltage drain current (v gs = 0) v ds = 620 v v ds = 620 v, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 7.5 a 0.28 0.34 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 3100 200 35 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 496 v, v gs = 0 -140-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -200-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 496 v, i d = 15.5 a, v gs = 10 v (see figure 20 ) - 105 16 62 - nc nc nc
stf17n62k3, STP17N62K3, stw17n62k3 electrical characteristics doc id 15046 rev 2 5/17 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 310 v, i d = 7.5 a, r g = 4.7 , v gs = 10 v (see figure 19 ) - 22 29 110 62 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 15.5 62 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15.5 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15.5 a, di/dt = 100 a/s v dd = 60 v (see figure 24 ) - 380 5000 26 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15.5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 24 ) - 450 6500 29 ns nc a table 8. gate-source zener diode symbol parameter test conditions min typ max unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 v
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 6/17 doc id 15046 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01 am10 3 42v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am10 3 41v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 100 am10 3 4 3 v1
stf17n62k3, STP17N62K3, stw17n62k3 electrical characteristics doc id 15046 rev 2 7/17 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 25 5v 6v 7v v g s =10v 3 0 3 5 40 45 am10 3 44v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 20 25 3 0 3 5 v g s =15v am10 3 45v1 v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =496v i d =15.5a 100 12 3 00 200 100 0 400 500 v d s 120 am10 3 46v1 r d s (on) 0.260 0.250 0 4 i d (a) ( ) 2 6 0.270 0.2 8 0 v g s =10v 10 8 12 0.290 am10 3 47v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am10 3 4 8 v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 14 16 am10 3 49v1
electrical characteristics stf17n62k3, STP17N62K3, stw17n62k3 8/17 doc id 15046 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs starting tj v g s (th) 0. 8 0.7 0.6 0.5 -75 t j (c) (norm) -25 0.9 75 25 125 1.0 1.1 i d =100 a am10 3 50v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 i d =7.5a v g s =10v am10 3 51v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c 1.1 12 am10 3 5 3 v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 1.10 i d =1ma am10 3 52v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 40 8 0 120 140 120 160 200 240 i d =15.5 a v dd =50 v 2 8 0 am10 3 54v1
stf17n62k3, STP17N62K3, stw17n62k3 test circuits doc id 15046 rev 2 9/17 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefo rm figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf17n62k3, STP17N62K3, stw17n62k3 10/17 doc id 15046 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stf17n62k3, STP17N62K3, stw17n62k3 package mechanical data doc id 15046 rev 2 11/17 figure 25. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stf17n62k3, STP17N62K3, stw17n62k3 12/17 doc id 15046 rev 2 table 10. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stf17n62k3, STP17N62K3, stw17n62k3 package mechanical data doc id 15046 rev 2 13/17 figure 26. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stf17n62k3, STP17N62K3, stw17n62k3 14/17 doc id 15046 rev 2 table 11. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
stf17n62k3, STP17N62K3, stw17n62k3 package mechanical data doc id 15046 rev 2 15/17 figure 27. to-247 drawing 0075 3 25_f
revision history stf17n62k3, STP17N62K3, stw17n62k3 16/17 doc id 15046 rev 2 5 revision history table 12. document revision history date revision changes 11-nov-2008 1 first release. 27-jul-2011 2 section 2.1: electrical characteristics (curves) has been updated. minor text changes.
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