? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 600 v v dgr t j = 25 c to 150 c, r gs = 1m - 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c - 10 a i dm t c = 25 c, pulse width limited by t jm - 48 a i ar t c = 25 c - 16 a e as t c = 25 c 2.5 j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 20..120 / 4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 600 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss - 25 a v gs = 0v t j = 125 c - 200 a r ds(on) v gs = -10v, i d = - 8a, note 1 790 m polarp tm power mosfet p-channel enhancement mode avalanche rated IXTR16P60P v dss = - 600v i d25 = - 10a r ds(on) 790m preliminary technical information g = gate d = drain s = source isolated tab isoplus247 (ixtr) e153432 ds99989(5/08) features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z the rugged polarp tm process z low q g z low drain-to-tab capacitance z low package inductance - easy to drive and to protect applications z high side switching z push-pull amplifiers z dc choppers z automatic test equipment z load-switch application z fuel injection systems
IXTR16P60P ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. isoplus247 (ixtr) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = - 8a, note 1 11 18 s c iss 5120 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 445 pf c rss 60 pf t d(on) 29 ns t r 25 ns t d(off) 60 ns t f 38 ns q g(on) 92 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = - 8a 27 nc q gd 23 nc r thjc 0.66 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 16 a i sm repetitive, pulse width limited by t jm - 64 a v sd i f = - 8a, v gs = 0v, note 1 - 2.8 v t rr 440 ns q rm 7.4 c i rm - 33.6 a i f = - 8a, -di/dt = -150a/ s v r = -100v, v gs = 0v resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = - 8a r g = 3 (external)
? 2008 ixys corporation, all rights reserved IXTR16P60P fig. 1. output characteristics @ 25oc -16 -14 -12 -10 -8 -6 -4 -2 0 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v ds - volts i d - amperes v gs = -10v - 7v - 5 v - 6 v fig. 2. extended output characteristics @ 25oc -38 -34 -30 -26 -22 -18 -14 -10 -6 -2 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 v ds - volts i d - amperes v gs = -10v - 7v - 6 v - 5 v fig. 3. output characteristics @ 125oc -16 -14 -12 -10 -8 -6 -4 -2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 7v - 6 v - 5 v fig. 4. r ds(on) normalized to i d = - 8a vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = -16 a i d = - 8 a fig. 5. r ds(on) normalized to i d = - 8a vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
IXTR16P60P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 28 32 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = - 300v i d = - 8a i g = -1ma fig. 11. capacitance 10 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1.0 10.0 100.0 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 1ms 100s r ds(on) limit dc, 100ms, 10ms - - - - - - -
? 2008 ixys corporation, all rights reserved IXTR16P60P fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w ixys ref: t_16p60p (b7) 6-03-08
|
