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8 fo 1 egap 00.3.ver 0030je6500sd90r mar 5, 201 3 the mark ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 2 of 8 mar 5, 2013 electrical characteristics (t a = +25 c) parameter symbol conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 600 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ? ? 600 na dc current gain h fe note 1 v ce = 2 v, i c = 10 ma 50 70 100 ? rf characteristics gain bandwidth product f t v ce = 3 v, i c = 90 ma, f = 2 ghz 13 15 ? ghz insertion power gain |s 21e | 2 v ce = 2 v, i c = 50 ma, f = 2 ghz 8 11 ? db noise figure nf v ce = 2 v, i c = 10 ma, f = 2 ghz, z s = z opt ? 1.2 1.7 db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0, f = 1 mhz ? 0.5 0.75 pf maximum available power gain mag note 3 v ce = 2 v, i c = 50 ma, f = 2 ghz ? 14 ? db maximum stable power gain msg note 4 v ce = 2 v, i c = 50 ma, f = 2 ghz ? 15 ? db gain 1 db compression output power p o (1 db) v ce = 2 v, i c = 70 ma note 5 , f = 2 ghz ? 17 ? dbm 3rd order intermodulation distortion output intercept point oip 3 v ce = 2 v, i c = 70 ma note 5 , f = 2 ghz ? 27 ? dbm no tes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded 3. mag = 4. msg = 5. collector current when p o (1 db) is output h fe classification ra nk fb/yfb marking t80 h fe value 50 to 100 (k ? (k 2 ? 1) ) s 21 s 12 s 21 s 12 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 3 of 8 mar 5, 2013 typical characteristics (t a = +25 c, unless otherwise specified) thermal/dc characteristics v ce = 2 v collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 50 40 30 20 10 0 0.40.2 0.6 0.8 1.0 1.2 400 350 300 250 200 150 190 330 100 50 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c), case temperature t c (?c) total power dissipation vs. ambient temperature, case temperature when case temperature is specified mounted on ceramic substrate (15 15 mm, t = 0.6 mm) free air 200 100 150 50 0 0.01 0.1 0.001 1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 150 50 100 02 14 35 200 a 100 a 300 a 400 a 500 a 600 a 700 a 800 a 900 a 1 000 a i b = 1 100 a capacitance/f t characteristics f = 1 mhz reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 1.00 0.60 0.80 0.20 0.40 0 1.0 3.0 4.0 2.0 5.0 v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 30 25 20 15 10 5 0 10 100 1 1 000 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 4 of 8 mar 5, 2013 gain characteristics v ce = 2 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 20 25 30 5 10 15 0 0.1 1.0 10.0 mag msg |s 21e | 2 v ce = 2 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 15 20 25 10 5 0 1 10 100 mag msg |s 21e | 2 output characteristics v ce = 2 v f = 1 ghz 25 20 15 10 5 0 ? 150 25 50 75 125 100 0 ?5 0??0 5 10 15 input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) p out i c v ce = 2 v f = 2 ghz 25 20 15 10 5 0 ? 150 25 50 75 125 100 0 ?5 0??0 5 10 15 input power p in (dbm) output power, collector current vs. input power output power p out (dbm) collector current i c (ma) p out i c remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. ne663m04 / 2SC5509 chapter title r09ds0056ej0300 rev.3.00 page 5 of 8 mar 5, 2013 no ise characteristics 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1.5 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2 ghz nf g a 6.0 0.0 5.0 4.0 3.0 2.0 1.0 30 25 20 15 10 5 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2.5 ghz nf g a remark the graphs indicate nominal characteristics. s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 6 of 8 mar 5, 2013 equal nf circle v ce = 2 v i c = 10 ma f = 1 ghz unstable area 3.5 db nf min = 0.95 db opt 1.5 db 3.0 db 4.0 db 2.0 db 2.5 db v ce = 2 v i c = 10 ma f = 2 ghz nf min = 1.1 db opt 2.0 db 1.5 db 2.5 db 3.5 db 4.0 db 3.0 db a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 7 of 8 mar 5, 2013 noise parameters v ce = 2 v, i c = 5 ma v ce = 2 v, i c = 20 ma opt opt f (ghz) nf min (db) g a (db) mag. ang. rn/50 f (ghz) nf min (db) g a (db) mag. ang. rn/50 0.8 0.70 18.0 0.17 93.0 0.11 0.8 1.12 20.7 0.30 ? 16 4.8 0.08 0.9 0.74 17.0 0.18 103.0 0.11 0.9 1.15 19.7 0.31 ? 16 2.7 0.09 1.0 0.78 16.2 0.20 112.7 0.11 1.0 1.18 18.8 0.32 ? 16 0.7 0.09 1.5 0.98 13.6 0.32 155.4 0.09 1.5 1.31 15.7 0.39 ? 15 1.5 0.10 1.8 1.10 12.5 0.40 176.2 0.07 1.8 1.38 14.4 0.45 ? 14 6.3 0.10 1.9 1.14 12.2 0.43 ? 177.8 0.06 1.9 1.41 14.0 0.47 ? 14 4.6 0.10 2.0 1.18 11.8 0.46 ? 172.2 0.06 2.0 1.43 13.6 0.49 ? 14 2.9 0.11 2.5 1.39 9.9 0.56 ? 151.8 0.08 2.5 1.56 11.5 0.56 ? 13 3.5 0.14 v ce = 2 v, i c = 10 ma v ce = 2 v, i c = 50 ma opt opt f (ghz) nf min (db) g a (db) mag. ang. rn/50 f (ghz) nf min (db) g a (db) mag. ang. rn/50 0.8 0.87 19.6 0.13 170.3 0.09 0.8 1.75 21.3 0.49 ? 15 9.4 0.10 0.9 0.90 18.6 0.15 171.5 0.09 0.9 1.78 20.3 0.49 ? 15 7.2 0.10 1.0 0.93 17.8 0.17 173.0 0.09 1.0 1.80 19.4 0.50 ? 15 4.9 0.11 1.5 1.07 14.8 0.30 ? 174.1 0.08 1.5 1.92 16.2 0.55 ? 14 4.7 0.14 1.8 1.15 13.6 0.39 ? 164.1 0.07 1.8 2.00 14.8 0.59 ? 13 9.1 0.17 1.9 1.18 13.2 0.41 ? 160.6 0.07 1.9 2.02 14.4 0.60 ? 13 7.3 0.19 2.0 1.20 12.8 0.44 ? 157.2 0.07 2.0 2.04 13.9 0.61 ? 13 5.5 0.20 2.5 1.35 10.9 0.53 ? 142.3 0.10 2.5 2.17 11.8 0.65 ? 12 6.4 0.28 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on. ne663m04 / 2SC5509 r09ds0056ej0300 rev.3.00 page 8 of 8 mar 5, 2013 package dimensions flat-lead 4-pin thin-type super minimold (m04) package (unit: mm) pin connections 1. emitter 2. collector 3. emitter 4. base t80 0.59?.05 0.11 +0.1 ?.05 0.60 0.65 0.65 0.65 1.30 1.25 2.0?.1 12 43 1.25?.1 2.05?.1 0.30 +0.1 ?.05 0.40 +0.1 ?.05 0.30 +0.1 ?.05 0.30 +0.1 ?.05 (1.05) 0.5 (top view) (bottom view) all trademarks and re gistered trademarks are t he property of their respective owners. c - 1 revision history ne 663m04 / 2s c5509 data sheet des cription rev. date page summary 1.00 sep 9, 2004 ? first edition issued throughout renesas format is applied to this data sheet. p.1 ordering information is modified. p.5 up to date s-parameters. 3.00 mar 5, 2013 p.8 added a drawing backside to package dimensions. notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and 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