wsb5524d middle power schottky barrier diode features ? 1.5a average rectified forward current ? low forward voltage,low leakage current ? fbp package applications ? switching circuit ? middle current rectification absolute maximum ratings electronics characteristics (t a =25 o c) order informations note1: duty cycle=0.5,f=20khz,square wave; note2: pulse width=8.3ms, single pulse; note3: single pulse, test tp=380us; note4: * = month code (a~z); p = device code; fbp1608-02l circuit marking parameter symbol value unit r everse voltage (repetitive peak) v rrm 40 v r everse voltage (dc) v r 40 v average forward current (1) i f(av) 1.5 a forward peak surge current (2) i fsm 7 a junction temperature t j 125 o c operating temperature topr -40 ~ 125 o c storage temperature tstg -55 ~ 150 o c parameter symbol condition min. typ. max. unit forward voltage (3) v f i f =1.5a 0.50 0.60 v reverse current i r v r =40v 0.1 ma junction capacitance c j v r =4v, f=1mhz 57 70 pf thermal resistance r ( j -sp) junction to soldering point of cathode tab 20 k/w device package marking shipping wsb5524d-2/tr fbp1608-02l(1.6*0.8) p* (4) 10000/reel&tape 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification wsb5524d will semiconductor ltd. 1 may, 2014 - rev. 1.2 wsb5524d middle power schottky barrier diode features ? 1.5a average rectified forward current ? low forward voltage,low leakage current ? fbp package applications ? switching circuit ? middle current rectification absolute maximum ratings electronics characteristics (t a =25 o c) order informations note1: duty cycle=0.5,f=20khz,square wave; note2: pulse width=8.3ms, single pulse; note3: single pulse, test tp=380us; note4: * = month code (a~z); p = device code; http://www.sh-willsemi.com fbp1608-02l circuit marking parameter symbol value unit r everse voltage (repetitive peak) v rrm 40 v r everse voltage (dc) v r 40 v average forward current (1) i f(av) 1.5 a forward peak surge current (2) i fsm 7 a junction temperature t j 125 o c operating temperature topr -40 ~ 125 o c storage temperature tstg -55 ~ 150 o c parameter symbol condition min. typ. max. unit forward voltage (3) v f i f =1.5a 0.50 0.60 v reverse current i r v r =40v 0.1 ma junction capacitance c j v r =4v, f=1mhz 57 70 pf thermal resistance r ( j -sp) junction to soldering point of cathode tab 20 k/w device package marking shipping wsb5524d-2/tr fbp1608-02l(1.6*0.8) p* (4) 10000/reel&tape
typical characteristics (ta=25 o c, unless otherwise noted) fig.1 forward voltage vs. forward current fig.3 average forward current derating curve fig.2 reverse current vs. reverse voltage fig.4 junction capacitance vs. reverse voltage 0 5 10 15 20 25 1 10 100 1000 capcitance,c j (pf) reverse voltage (v) 5 10 15 20 25 30 35 40 1e-3 0.01 0.1 1 10 100 1000 10000 +125 o c +85 o c +25 o c reverse current (ua) reverse voltage (v) -50 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1e-3 0.01 0.1 1 +125 o c +150 o c +85 o c +25 o c forward current (a) forward voltage (v) -50 o c 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 average forward current (a) (1) soldering point temperature ( o c ) wsb5524d 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification wsb5524d will semiconductor ltd. 2 may, 2014 - rev. 1.2 typical characteristics (ta=25 o c, unless otherwise noted) fig.1 forward voltage vs. forward current fig.3 average forward current derating curve fig.2 reverse current vs. reverse voltage fig.4 junction capacitance vs. reverse voltage 0 5 10 15 20 25 1 10 100 1000 capcitance,c j (pf) reverse voltage (v) 5 10 15 20 25 30 35 40 1e-3 0.01 0.1 1 10 100 1000 10000 +125 o c +85 o c +25 o c reverse current (ua) reverse voltage (v) -50 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1e-3 0.01 0.1 1 +125 o c +150 o c +85 o c +25 o c forward current (a) forward voltage (v) -50 o c 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 average forward current (a) (1) soldering point temperature ( o c )
package outline dimensions fbp1608-02l(1.6*0.8*0.5) symbol dimensions in milimeters dimensions in inches min. max. min. max. a 0.450 0.550 0.018 0.022 a1 0.010 0.090 0.000 0.004 d 0.750 0.850 0.030 0.033 d1 0.520 0.680 0.020 0.027 d2 0.600 0.760 0.024 0.030 e 1.550 1.650 0.061 0.065 l1 0.410 ref. 0.016 ref. l2 0.850 ref. 0.033 ref. l3 0.080 ref. 0.003 ref. l4 0.340 ref. 0.013 ref. e 0.900 1.000 0.035 0.039 wsb5524d 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification wsb5524d will semiconductor ltd. 3 may, 2014 - rev. 1.2 package outline dimensions fbp1608-02l(1.6*0.8*0.5) symbol dimensions in milimeters dimensions in inches min. max. min. max. a 0.450 0.550 0.018 0.022 a1 0.010 0.090 0.000 0.004 d 0.750 0.850 0.030 0.033 d1 0.520 0.680 0.020 0.027 d2 0.600 0.760 0.024 0.030 e 1.550 1.650 0.061 0.065 l1 0.410 ref. 0.016 ref. l2 0.850 ref. 0.033 ref. l3 0.080 ref. 0.003 ref. l4 0.340 ref. 0.013 ref. e 0.900 1.000 0.035 0.039
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