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| jmnic product specification silicon pnp power transistors 2sb794 2sb795 description ? with to-126 package ? darlington ? high dc current gain ? low collector saturation voltage ? complement to type 2sd985 2sd986 applications ? for use in operating from ic without predriver ,such as hammer driver pinning(see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol param eter conditions va lue unit 2sb794 -60 v cbo collector-base voltage 2sb795 open emitter -80 v 2sb794 -60 v ceo collector-emitter voltage 2sb795 open base -80 v v ebo emitter-base voltage open collector -8 v i c collector current (dc) -1.5 a i cm collector current-peak -3.0 a t a =25 ?? 1.0 p d total power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp power transistors 2sb794 2sb795 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2sb794 -60 v (br)ceo collector-emitter breakdown voltage 2sb795 i c =-10ma ;i b =0 -80 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-1ma -1.5 v v besat base-emitter saturation voltage i c =-1a ;i b =-1ma -2.0 v 2sb794 v cb =-60v; i e =0 i cbo collector cut-off current 2sb795 v cb =-80v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-5v; i c =0 -2.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-2v 1000 h fe-2 dc current gain i c =-1a ; v ce =-2v 2000 30000 switching times t on turn-on time 0.5 | s t stg storage time 1.0 | s t f fall time i c =-1.0a ; i b1 =-i b2 =-1.0ma v cc =-50v;r l =50 |? 1.0 | s ? h fe-2 classifications m l k 2000-5000 4000-10000 8000-30000 jmnic product specification 3 silicon pnp power transistors 2sb794 2sb795 package outline fig.2 outline dimensions |
Price & Availability of 2SB795-2014
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